Fairchild FDS6576 service manual
FDS6576
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
FDS6576 P-Channel 2.5V Specified PowerTrench
December 2006
tm
This P-Channel 2.5V specified MOSFET is in a rugged
gate version of Fairchild Semiconductor's advanced
PowerTrench
management applications with a wide range of gate
drive voltage (2.5V - 12V).
®
®
process. It has been optimized for power
Applications
Load switch
•
• Battery protection
• Power management
–11 A, –20 V. R
R
• Extended V
•
Low gate charge (43nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R
DS(ON)
= 0.014 :@ VGS = –4.5 V
DS(ON)
= 0.020 :@ VGS = –2.5 V
DS(ON)
range (r12V) for battery applications.
GSS
.
• High power and current handling capability.
• RoHS Compliant.
D
D
D
D
G
S
SO-8
S
S
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
5
6
7
8
4
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage –20 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) –11 A
– Pulsed –50
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range –55 to +150
(Note 1a) 2.5
(Note 1b)
(Note 1c)
r 12
1.2
1.0
MOSFET
V
W
qC
Thermal Characteristics
R
TJA
R
TJA
R
TJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 50
(Note 1c) 125
(Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6576 FDS6576 13’’ 12mm 2500 units
2006 Fairchild Semiconductor Corpora tion
qC/W
qC/W
qC/W
FDS6576 Rev E3
FDS6576 P-Channel 2.5V Specified PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
'BVDSS
'T
J
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
= 0 V, ID = –250 PA
V
GS
I
= –250 PA, Referenced to 25qC
D
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1
Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –12 V, VDS = 0 V –100 nA
–20 V
–13
mV/qC
On Characteristics (Note 2)
V
GS(th)
'VGS(th)
'T
J
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
= VGS, ID = –250 PA
V
DS
I
= –250 PA, Referenced to 25qC
D
VGS = –4.5 V, ID = –11 A
V
= –2.5 V, ID = –8.8 A
GS
= –4.5 V, ID = –11 A, TJ=125qC
V
GS
On–State Drain Current VGS = –4.5 V, VDS = –5 V –25 A
Forward Transconductance VDS = –4.5 V, ID = –11 A 50 S
–0.6 –0.83 –1.5 V
3.5
8.2
11.5
11.1
mV/qC
14
20
23
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 4044 pF
Output Capacitance 955 pF
V
= –10 V, V
DS
f = 1.0 MHz
GS
= 0 V,
504Reverse Transfer Capacitance pF
Switching Characteristics (Note 2)
= –10 V, ID = –1 A,
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
Turn–On Delay Time 18 32 ns
Turn–On Rise Time 17 31 ns
Turn–Off Delay Time 124 198 ns
Turn–Off Fall Time
g
gs
gd
Total Gate Charge 43 60 nC
Gate–Source Charge 7 nC
Gate–Drain Charge
V
DD
V
= –4.5 V, R
GS
= –10 V, ID = –11 A,
V
DS
= –4.5 V
V
GS
GEN
= 6 :
79 126 ns
12 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
TJA
the drain pins. R
Maximum Continuous Drain–Source Diode Forward Current –2.1 A
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
TJC
TCA
V
= 0 V, IS = –2.1 A (Note 2) –0.66 –1.2 V
GS
is determined by the user's board design.
PA
m:
MOSFET
a) 50°C/W when
mounted on a 1in
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300Ps, Duty Cycle < 2.0%
2
b) 105°C/W when
mounted on a .04 in
pad of 2 oz copper
2
c) 125°C/W when mounted
on a minimum pad.
FDS6576 Rev E3
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