Fairchild FDS6575 service manual
FDS6575
FDS6575
P-Channel 2.5V Specified PowerTrench MOSFET
September 2001
General Description
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 8V).
Applications
• Power management
• Load switch
• Battery protection
D
D
D
D
D
D
D
D
SO-8
Pin 1
SO-8
S
Absolute Maximum Ratings T
G
G
S
S
S
S
S
o
=25
C unless otherwise noted
A
Features
• –10 A, –20 V. R
R
• Low gate charge
• High performance trench technology for extremely
low R
• High current and power handling capability
DS(ON)
5
6
7
8
= 13 mΩ @ VGS = –4.5 V
DS(ON)
= 17 mΩ @ VGS = –2.5 V
DS(ON)
4
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage –20 V
DSS
V
Gate-Source Voltage ±8 V
GSS
ID Drain Current – Continuous (Note 1a) –10 A
– Pulsed –50
PD
TJ, T
STG
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range –55 to +175 °C
1.5
1.2
W
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
Thermal Resistance, Junction-to-Ambient (Note 1c) 125
Thermal Resistance, Junction-to-Case (Note 1) 25
°C/W
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2001 Fairchild Semiconductor Corporation FDS6575 Rev F(W)
FDS6575 FDS6575 13’’ 12mm 2500 units
FDS6575
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA –20 V
DSS
∆BVDSS
∆TJ
I
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
ID = –250 µA, Referenced to 25°C –13 mV/°C
Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –8 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
V
Gate Threshold Voltage VDS = VGS, ID = –250 µA –0.4 –0.6 –1.5 V
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
I
D(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = –250 µA, Referenced to 25°C
VGS = –4.5 V, ID = –10 A
VGS = –2.5 V, ID = –9 A
VGS= –4.5 V, ID =–10A, TJ=125°C
3 mV/°C
8.5
13
11
11
m Ω
17
20
On–State Drain Current VGS = –4.5 V, VDS = –5 V –50 A
gFS Forward Transconductance VDS = –5 V, ID = –10 A 57 S
Dynamic Characteristics
C
Input Capacitance 4951 pF
iss
C
Output Capacitance 884 pF
oss
C
Reverse Transfer Capacitance
rss
VDS = –10 V, V
f = 1.0 MHz
= 0 V,
GS
451 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 16 29 ns
d(on)
tr Turn–On Rise Time 9 18 ns
t
Turn–Off Delay Time 196 314 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 53 74 nC
Qgs Gate–Source Charge 6 nC
Qgd Gate–Drain Charge
VDD = –10V, ID = –1 A,
VGS = –4.5 V, R
GEN
= 6 Ω
VDS = –10 V, ID = –10 A,
VGS = –4.5 V
78 125 ns
12 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –2.1 A
VSD
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
a) 50 °C/W when
mounted on a 1in2
pad of 2 oz copper
is determined by the user's board design.
θCA
VGS = 0 V, IS = –2.1 A (Note 2) –0.6 –1.2 V
b) 105 °C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125 °C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6575 Rev F(W)
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