Fairchild FDS6298 service manual
FDS6298
30V N
-
Channel Fast Switching PowerTrench
MOSFE
T
tm
April 2007
FDS6298
30V N-Channel Fast Switching PowerTrench
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
and fast switching speed.
DS(ON)
Applications
Control Switch for DC-DC Buck converters
Notebook Vcore
Telecom / Networking Point of Load
D
D
D
D
D
D
D
D
SO-8
Pin 1
SO-8
S
Absolute Maximum Ratings T
Symbol
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID
PD
E
AS
TJ, T
STG
Drain Current – Continuous
– Pulsed 50
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range –55 to +150
Parameter Ratings Units
G
G
S
S
S
S
S
o
=25
C unless otherwise noted
A
Features
13 A, 30 V. R
R
Low gate charge (10nC @ VGS=5V)
Very low Miller Charge (3nC)
Low Rg (1 Ohm)
ROHS Compliant
5
6
7
8
(Note 1a)
13
(Note 1a)
3.0
(Note 1b)
1.2
(Note 3)
181
= 9 mΩ @ VGS = 10 V
DS(ON)
= 12 mΩ @ VGS = 4.5 V
DS(ON)
±20
4
3
2
1
V
A
W
mJ
°C
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
50
125
25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2007 Fairchild Semiconductor Corporation
FDS6298 FDS6298 13’’ 12mm 2500 units
°C/W
°C/W
°C/W
DS6298 Rev. C1 ( W)
F
FDS6298
30V N
-
Channel Fast Switching PowerTrench
MOSFET
Electrical Characteristics
Symbol
Parameter Test Conditions Min Typ Max Units
TA = 25°C unless otherwise noted
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BV
DSS
Breakdown Voltage Temperature
∆TJ
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V - - 1
DSS
I
Gate–Body Leakage
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆TJ
R
DS(ON)
Coefficient
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 13 A
VGS = 4.5 V, ID = 12 A
VGS= 10 V, ID = 13 A, TJ=125°C
30 - - V
- 30 -
- -
1 1.7
- –5 -
7.4
9.4
11
mV/°C
±100
3 V
mV/°C
9
12
15
gFS Forward Transconductance VDS = 10 V, ID = 13 A - 58 - S
Dynamic Characteristics
C
Input Capacitance - 1108 - pF
iss
C
Output Capacitance - 310
oss
C
Reverse Transfer Capacitance
rss
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 0.3 1 1.7
Switching Characteristics
t
Turn–On Delay Time - 11 20 ns
d(on)
(Note 2)
tr Turn–On Rise Time - 5 10 ns
t
Turn–Off Delay Time - 27 43 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge - 10 14 nC
Qgs Gate–Source Charge - 3 - nC
Qgd Gate–Drain Charge
Drain–Source Diode Characteristics
VSD
trr Diode Reverse Recovery Time IF = 13 A, dIF/dt = 100 A/µs
Qrr Diode Reverse Recovery Charge - 13 - nC
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
θCA
is determined by the user's board design.
VDS = 15 V, V
GS
f = 1.0 MHz
VDD = 15 V, ID = 1 A,
VGS = 10 V, R
GEN
VDS = 15 V, ID = 13 A,
VGS = 5 V
VGS = 0 V, IS = 2.1 A
= 0 V,
= 6 Ω
(Note 2)
- pF
- 109
- pF
- 7 14 ns
- 3 - nC
- 0.74 1.2 V
- 27 - ns
µA
nA
mΩ
Ω
a) 50°C/W when mounted
on a 1in2 pad of 2 oz
copper
2. Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Starting TJ = 25°C, L = 3mH, IAS = 11A, VDD = 30V, VGS = 10V
b) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
FDS6298 Rev. C1 (W)
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