Fairchild FDS6294 service manual
FDS6294
February 2007
FDS6294
30V N-Channel Fast Switching PowerTrench
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
and fast switching speed.
DS(ON)
Applications
• DC/DC converter
• Power management
• Load switch
D
D
D
D
D
D
D
D
SO-8
Pin 1
SO-8
S
G
G
S
S
S
S
S
Features
• 13 A, 30 V. R
R
• Low gate charge (10 nC typical)
• High performance trench technology for extremely
low R
• High power and current handling capability.
• RoHS Compliant
MOSFET
DS(ON)
5
6
7
8
= 11.3 mΩ @ VGS = 10 V
DS(ON)
= 14.4 mΩ @ VGS = 4.5 V
DS(ON)
4
3
2
1
tm
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous
– Pulsed 50
PD
E
AS
TJ, T
STG
Power Dissipation for Single Operation
Single Pulse Avalanche Energy
Operating and Storage Junction Temperature Range –55 to +175
(Note 1a)
13 A
(Note 1a)
3.0
(Note 1b)
(Note 3)
181
± 20
W
1.2
mJ
°C
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1b)
(Note 1)
50
125
25
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS6294 FDS6294 13’’ 12mm 2500 units
2007 Fairchild Semiconductor Corporation
FDS6294 Rev D1 (W)
V
FDS6
2
94
Electrical Characteristics
Symbol
Parameter Test Conditions Min Typ Max Units
TA = 25°C unless otherwise noted
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BV
DSS
Breakdown Voltage Temperature
∆TJ
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
DSS
I
Gate–Body Leakage
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆TJ
R
DS(on)
Coefficient
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = ± 20 V, VDS = 0 V
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 13 A
VGS = 4.5 V, ID = 12 A
VGS= 10 V, ID = 13 A, TJ=125°C
I
On–State Drain Current VGS = 10 V, VDS = 5 V 50 A
D(on)
30 V
27
1 1.8
–5
9.4
11.5
13.5
mV/°C
±100
3 V
mV/°C
11.3
14.4
16.5
gFS Forward Transconductance VDS = 10 V, ID = 13 A 48 S
Dynamic Characteristics
C
Input Capacitance 1205 pF
iss
C
Output Capacitance 323
oss
C
Reverse Transfer Capacitance
rss
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 0.9
Switching Characteristics
t
Turn–On Delay Time 9 18 ns
d(on)
(Note 2)
tr Turn–On Rise Time 4 8 ns
t
Turn–Off Delay Time 24 48 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 10 14 nC
Qgs Gate–Source Charge 3.5
Qgd Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 2.1 A
VSD
trr Diode Reverse Recovery Time IF = 13 A, diF/dt = 100 A/µs
Qrr Diode Reverse Recovery Charge 14 nC
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
Drain–Source Diode Forward
Voltage
is guaranteed by design while R
θJC
θCA
is determined by the user's board design.
VDS = 15 V, V
= 0 V,
GS
f = 1.0 MHz
VDD = 15 V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
VDS = 15 V, ID = 13 A,
VGS = 5 V
VGS = 0 V, IS = 2.1 A
102
6 12 ns
3 nC
(Note 2)
0.74 1.2 V
25 nS
pF
pF
nC
µA
nA
mΩ
Ω
a) 50°C/W when mounted
on a 1in2 pad of 2 oz
copper
2. Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Starting TJ = 25°C, L = 3mH, IAS = 11A,VDD = 30V, VGS = 10V
b) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
FDS6294 Rev D1 (W)
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