Fairchild FDS5680 service manual
FDS5680
60V N-Channel PowerTrenchTM MOSFET
FDS5680
July 1999
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
Features
8 A, 60 V. R
R
= 0.020 Ω @ V
DS(ON)
= 0.025 Ω @ V
DS(ON)
= 10 V
GS
= 6 V.
GS
Low gate charge (30nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
DC/DC converter
Load switch
Motor drives
D
D
5
4
D
D
G
S
SO-8
S
S
Absolute Maximum Ratings T
= 25°C unless otherwise noted
A
6
7
8
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage 60 V
Gate-Source Voltage
Drain Current - Continuous (Note 1a) 8A
- Pulsed 50
Power Dissipation for Single Operation (Note 1a) 2.5 W
(Note 1b)
(Note 1c)
Operating and Storage Junct i on Temperature Range -55 to +150
±20
1.2
1
V
°C
Thermal Characteristics
R
JA
θ
R
JC
θ
Thermal Resistance, Junction-to-Am bient (Note 1a) 50
Thermal Resistance, Junction-to-Case (Note 1) 25
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDS5680 FDS5680 13’’ 12mm 2500 units
1999 Fairchild Semiconductor Corporation
°C/W
°C/W
FDS5680 Rev. C
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
= 0 V, ID = 250 µA
V
GS
= 250 µA, Referenced to 25°C
I
D
Zero Gate Voltag e Drai n Curre nt VDS = 48 V, VGS = 0 V 1
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA
60 V
27
mV/°C
µA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
J
R
DS(on)
I
D(on)
g
FS
Gate Threshold V olt ag e
Gate Threshold V olt ag e
Temperature Coefficient
Static Drain-Source
On-Resistance
= VGS, ID = 250 µA
V
DS
= 250 µA, Referenced to 25°C
I
D
VGS = 10 V, ID = 8 A
V
= 10 V, ID = 8 A, TJ = 125°C
GS
V
= 6 V, ID = 7.5 A
GS
On-State D rain Current VGS = 10 V, VDS = 5 V 25 A
Forward Transconductance VDS = 5 V, ID = 8 A 28 mS
22.5 4 V
-4.5
0.017
0.027
0.019
0.020
0.032
0.025
mV/°C
Ω
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 1850 pF
Output Capacitance 290 pF
Reverse Transfer Capacitance
V
= 15 V, VGS = 0 V
DS
f = 1.0 MHz
100 pF
FDS5680
Switching Characteristics (Note 2)
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Dela y Time 13 24 ns
Turn-On Rise Time 8 16 ns
= 30 V, ID = 1 A
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
Turn-Off Del ay Time 16 26 ns
Turn-Off Fall Time
Total Gate Charge 30 42 nC
Gate-Source Charge 8.5 nC
V
= 15 V, ID = 8 A
DS
= 10 V,
V
GS
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1: R
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
θJA
drain pins. R
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
θJC
Maximum Continuous D rain-Source Diode Forward Current 2.1 A
Drain-Sourc e Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.74 1.2 V
is guaranteed by design while R
a) 50° C/W when
mounted on a 0.5 in
pad of 2 oz. copper.
is determined by the user's board design.
θCA
2
b) 105° C/W when
mounted on a 0.02 in
pad of 2 oz. copper.
2
32 50 ns
5.5 nC
c) 125° C/W when
mounted on a minimum pad.
FDS5680 Rev. C
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