Fairchild FDS5672 service manual

FDS5672
N-Channel PowerTrench® MOSFET

60V, 12A, 10mΩ

FDS5672 N-Channel PowerTrench

July 2005

Features

 r
 r
 High performance trench technology for extremely low

r

 Low gate charge
 High power and current handling capability

DS(ON)

DS(ON)

DS(ON)

= 10mΩ, V
= 14mΩ, V

= 10V, ID = 12A

GS

= 6V, ID = 10A

GS

Applications

 DC/DC converters

General Description

This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r

and fast switching speed.

DS(ON)

®

MOSFET

Branding Dash

1

2

3

4

©2005 Fairchild Semiconductor Corporation
FDS5672 Rev. A

SO-8

5

5

6

7

8

1

4

3

2

1

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FDS5672 N-Channel PowerTrench

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

C

Symbol Parameter Ratings Units

V

DSS

V

GS

Drain to Source Voltage 60 V
Gate to Source Voltage ±20 V
Drain Current

I

D

Continuous (TC = 25 oC, VGS = 10V, R
Continuous (TC = 25 oC, VGS = 6V, R

= 50oC/W)

θJA

= 50oC/W) 10

θJA

12 A

Pulsed Figure 4 A

E

AS

P

D

TJ, T

STG

Single Pulse Avalanche Energy (Note 1) 245 mJ
Power dissipation 2.5 W
Derate above 25oC 20 mW/oC
Operating and Storage Temperature -55 to 150

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance Junction to Case (Note 2) 25
Thermal Resistance Junction to Ambient at 10 seconds (Note 3) 50
Thermal Resistance Junction to Ambient at 1000 seconds (Note 3) 85

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDS5672 FDS5672 SO-8 330mm 12mm 2500 units

Electrical Characteristics T

Symbol Parameter Test Conditions Min Typ Max Units

= 25°C unless otherwise noted

C

o

C/W

o

C/W

o

C/W

o

C

®

MOSFET

Off Characteristics

B
I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 60 - - V
Zero Gate Voltage Drain Current
Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 2 - 4 V

Drain to Source On Resistance

Dynamic Characteristics

C
C
C
R
Q
Q
Q
Q
Q

ISS
OSS
RSS
G

g(TOT)
g(TH)
gs
gs2
gd

Input Capacitance
Output Capacitance - 410 - pF
Reverse Transfer Capacitance - 130 - pF
Gate Resistance VGS = 0.5V, f = 1MHz - 1.4 - Ω
Total Gate Charge at 10V VGS = 0V to 10V
Threshold Gate Charge VGS = 0V to 2V - 4.2 5.5 nC
Gate to Source Gate Charge - 9.4 - nC
Gate Charge Threshold to Plateau - 5.2 - nC
Gate to Drain “Miller” Charge - 9.3 - nC

VDS = 50V - - 1
VGS = 0V TC = 150oC - - 250

ID = 12A, V

= 10V - 0.0088 0.010

GS

ID = 10A, VGS = 6V, - 0.012 0.014
ID = 12A, V

T

= 150oC

C

VDS = 25V, VGS = 0V,

= 10V,

GS

- 0.016 0.023

- 2200 - pF

f = 1MHz

- 34 45 nC

VDD = 30V
ID = 12A
Ig = 1.0mA

µA

Ω

©2005 Fairchild Semiconductor Corporation
FDS5672 Rev. A

2

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Resistive Switching Characteristic s (V

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time
Turn-On Delay Time - 13 - ns
Rise Time - 20 - ns
Turn-Off Delay Time - 35 - ns
Fall Time - 14 - ns
Turn-Off Time - - 64 ns

= 10V)

GS

VDD = 30V, ID = 12A
VGS = 10V, RGS = 9.1Ω

- - 50 ns

Drain-Source Diode Characteristics

I

= 12A - - 1.25 V

V

SD

t

rr

Q

RR

Notes:
1: Starting TJ = 25°C, L = 1mH, IAS = 22A, VDD = 60V, VGS = 10V.
2: R

θJA

drain pins. R

3: R

θJA

Source to Drain Diode Voltage
Reverse Recovery Time ISD=12A, dISD/dt = 100A/µs - - 39 ns

Reverse Recovered Charge ISD=12A, dISD/dt = 100A/µs - - 40 nC

is the sum of the junction-to-cas e and cas e-to-am bient th ermal r esistance whe re the case therm al refer ence is defined a s the solder mounti ng surface of the
is measured with 1.0 in2 copper on FR-4 board.

is guaranteed by design while R

θJC

is determined by the user’s board design.

θJA

SD

ISD = 6A - - 1.0 V

FDS5672 N-Channel PowerTrench

®

MOSFET

©2005 Fairchild Semiconductor Corporation
FDS5672 Rev. A

3

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FDS5672 N-Channel PowerTrench

Typical Characteristics T

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0255075100 150

TA, AMBIENT TEMPERATURE (oC)

Figure 1.

Normalized Power Dissipation vs

= 25°C unless otherwise noted

C

125

Ambient Temperature

2
1

DUTY CYCLE - DESCENDING ORDER

0.5

0.2

0.1

0.05

0.02

0.01

0.1

15

12

9

6

, DRAIN CURRENT (A)

D

I

3

0

25 50 75 100 125 150

TA, AMBIENT TEMPERATURE (oC)

Figure 2.

Maximum Continuous Drain Current vs

V

= 10V

GS

Ambient Temperature

®

MOSFET

, NORMALIZED

θJA

Z

0.01

THERMAL IMPEDANCE

0.001
10

1100

100

, PEAK CURRENT (A)

DM

I

10

-5

10

-5

VGS = 10V

-4

10

Figure 3.

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

-4

10

SINGLE PULSE

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-3

10

-2

10

t, RECTANGULAR PULSE DURATION (s)

-1

10

10

0

1

10

Normalized Maximum Transient Thermal Impedance

TA = 25oC

FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:

I = I

-3

10

Figure 4.

-2

10

t, PULSE WIDTH (s)

-1

10

Peak Current Capability

0

10

1

10

P

DM

1/t2

x R

θJA

θJA

o

C DERATE PEAK

25

t

1

t

+ T

2

10

150 - T

125

2

10

2

A

3

10

A

3

10

©2005 Fairchild Semiconductor Corporation
FDS5672 Rev. A

4

www.fairchildsemi.com