Fairchild FDS5670 service manual

FDS5670

60V N-Channel PowerTrenchTM MOSFET

FDS5670

August 1999

General Description

This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM

controllers.

These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
specifications.

DS(ON)

Features

 10 A, 60 V. R

R

= 0.014 Ω @ V

DS(ON

)

= 0.017 Ω @ V

DS(ON)

 Low gate charge.

 Fast switching speed.

= 10 V

GS

= 6 V.

GS

 High performance trench technology for extremely

The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply

designs with higher overall efficiency.

D

D

D

D

G

S

SO-8

Absolute Maximum Ratings T

S

S

= 25°C unless otherwise noted

A

low R

 High power and current handling capability.

DS(ON)

.

5

6

7
8

4

3

2
1

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

stg

Drain-Source Voltage 60 V
Gate-Source Voltage
Drain Current - Continuous (Note 1a) 10 A

- Pulsed 50

Power Dissipation for Si ngl e Operation (Note 1a) 2.5 W

(Note 1b)
(Note 1c)

Operating and Storage Juncti on Temperature Range -55 to +150

±20

1.2
1

V

°C

Thermal Characteristics

R

JA

θ

R

JC

θ

Thermal Resistance, Junction-to-A mbient (Note 1a) 50
Thermal Resistance, Junction-to-Case (Note 1) 25

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

FDS5670 FDS5670 13’’ 12mm 2500 units

1999 Fairchild Semiconductor Corporation

°C/W
°C/W

FDS5670 Rev. B

FDS5670

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

DSS

∆BVDSS
∆T

J

I

DSS

I

GSSF

I

GSSR

Drain-Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

= 0 V, ID = 250 µA

V

GS

= 250 µA, Referenced to 25°C

I

D

Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA

60 V

58

mV/°C

µA

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
∆T

J

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient
Static Drain-Source

On-Resistance

= VGS, ID = 250 µA

V

DS

= 250 µA, Referenced to 25°C

I

D

VGS = 10 V, ID = 10 A

= 10 V, ID = 10 A, TJ=125°C

V

GS

V

= 6 V, ID = 9 A

GS

On-State Drain Current VGS = 10 V, VDS = 5 V 25 A
Forward Transconductance VDS = 5 V, ID = 10 A 39 S

22.44 V

6.8

0.012

0.019

0.014

0.014

0.027

0.017

mV/°C

Ω

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 2900 pF
Output Capacitance 685 pF
Reverse Transfer Capacitance

= 15 V, VGS = 0 V

V

DS

f = 1.0 MHz

180 pF

Switching Characteristics (Note 2)

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q

Turn-On Delay Time 16 29 ns
Turn-On Rise Time 10 20 ns
Turn-Off Delay Time 50 80 ns
Turn-Off Fall Time

g
gs
gd

Total Gate Charge 49 70 nC
Gate-Source Charge 9 nC
Gate-Drain Charge

V

= 30 V, ID = 1 A

DD

= 10 V, R

V

GS

= 20 V, ID = 10 A

V

DS

= 10 V,

V

GS

GEN

= 6 Ω

23 42 ns

10.4 nC

Drain-Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

θJA

drain pins. R

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

Maximum Continuous Drain-Source Diode Forward Current 2.1 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.72 1.2 V

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the

is guaranteed by design while R

θJC

a) 50° C/W when

mounted on a 0.5 in
pad of 2 oz. copper.

is determined by the user's board design.

θJA

2

b) 105° C/W when

mounted on a 0.02 in
pad of 2 oz. copper.

c) 125° C/W when mounted

2

on a minimum pad.

FDS5670 Rev. B