Fairchild FDS4501H service manual

S

G

FDS4501H

Complementary PowerTrench Half-Bridge MOSFET

May 2001

General Description

This complementary MOSFET half-bridge device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

Applications

• DC/DC converter

• Power management

• Load switch

Features

• Q1: N-Channel

9.3A, 30V R R

• Q2: P-Channel –5.6A, –20V R R

= 18 mΩ @ V

DS(on)

= 23 m Ω @ V

DS(on)

= 46 mΩ @ V

DS(on)

= 63 mΩ @ V

DS(on)

= 10V

GS

= 4.5V

GS

= –4.5V

GS

= –2.5V

GS

• Battery protection

D

G2

S2

G1

S

S1

SO-8

S

Absolute Maximum Ratings T

= 25°C unless otherwise noted

A

Q2

5 6

Q1

7 8

4 3 2 1

Symbol Parameter Q1 Q2 Units

V

Drain-Source Voltage 30 –20 V

DSS

V

Gate-Source Voltage

GSS

ID Drain Current - Continuous (Note 1a) 9.3 –5.6 A

- Pulsed 20 –20 PD Power Dissipation for Single Operation (Note 1a) 2.5 W

TJ, T

STG

(Note 1b) (Note 1c)

Operating and Storage Junction Temperature Range –55 to +150

±20 ±8

1.2 1

V

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient (Note 1a) 50 Thermal Resistance, Junction-to-Case (Note 1) 25

°C/W °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS4501H FDS4501H 13” 12mm 2500 units

2001 Fairchild Semiconductor Corporation FDS4501H Rev C(W)

FDS4501H

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

Drain-Source Breakdown

DSS

Voltage

∆BVDSS ∆TJ

I

Zero Gate Voltage Drain

DSS

Breakdown Voltage Temperature Coefficient

Current

I

Gate-Body Leakage VGS = +20 V, VDS = 0 V

GSS

VGS = 0 V, ID = 250 µA VGS = 0 V, ID = –250 µA ID = 250 µA, Referenced to 25°C ID = –250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VDS = –16 V, VGS = 0 V

VGS = +8 V, VDS = 0 V

Q1 Q2

–20 Q1 Q2

Q1 Q2

30

V

24

–13

1 +100

+100

–1

mV/°C

µA nA

On Characteristics (Note 2)

V

Gate Threshold Voltage VDS = VGS, ID = 250 µA

GS(th)

VDS = VGS, ID = –250 µA

∆VGS(th) ∆TJ

R

DS(on)

Gate Threshold Voltage Temperature Coefficient

Static Drain-Source

On-Resistance

ID = 250 µA, Referenced to 25°C ID = –250 µA, Referenced to 25°C VGS = 10 V, ID = 9.3 A VGS = 10 V, ID = 9.3 A, TJ = 125°C VGS = 4.5 V, ID = 7.6 A

VGS = –4.5 V, ID = –5.6 A VGS = –4.5 V, ID = –5.6 A, TJ = 125°C VGS = –2.5 V, ID = –5.0 A

I

D(on)

On-State Drain Current VGS = 10 V, VDS = 5 V

VGS = –4.5 V, VDS = –5 V

gFS Forward Transconductance VDS = 5 V, ID = 9.3 A

VDS = 5 V, ID = –5.6 A

Q1 Q2 1 –0.4 Q1

–4

Q2 Q1

14

Q2

Q1

20

Q2

–20

Q1

28

Q2

1.6

–0.7 3 –1.5 V

mV/°C

3

18 21 17

36 49 47

m Ω

29

23

46

80

63

A

S

16

Dynamic Characteristics

C

Input Capacitance Q1

iss

VDS = 10 V, VGS = 0 V, f = 1.0 MHz

C

Output Capacitance Q1

oss

C

Reverse Transfer Capacitance

rss

Q2 Q2

Q1 Q2

1958

1312

424

240

182

106

pF pF pF

FDS4501H Rev C(W)

Source Diode Forward

Electrical Characteristics (continued) T

Symbol

Switching Characteristics (Note 2)

t

d(on)

tr Turn-On Rise Time t

d(off)

tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge

Drain-Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain-Source Diode Forward Current Q1 VSD Drain-

Notes:

1. R

the drain pins. R

= 25°C unless otherwise noted

GEN

= 6 Ω

GEN

A

Type Min Typ Max Units

Q1 Q2

Q1 Q2 Q1 Q2

Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2

15

5

15

38

40

10

25

17

13

4

2.5

5

2.0

Parameter

Turn-On Delay Time

Turn-Off Delay Time

Test Conditions

Q1 VDD = 15 V, ID = 1 A,

VGS = 10V, R Q1 VDD = –10 V, ID = –1 A, VGS = –4.5V, R

Q1 VDS = 15 V, ID = 9.3 A, VGS = 4.5 V

Q2 VDS = 15 V, ID = –2.4 A,VGS = –4.5 V

2.1

Q2

Voltage

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

θJA

is guaranteed by design while R

θJC

VGS = 0 V, IS = –2.1 A (Note 2)

is determined by the user's board design.

θCA

VGS = 0 V, IS = 2.1 A (Note 2)

Q1 Q2

1.2

27

10

27

61

64

20

40

27

21

nC nC

–2.1 A –1.2 V

ns ns ns ns

nC

a) 50°C/W when

mounted on a 1 in2 pad of 2 oz copper

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

b) 105°C/W when

mounted on a 0.04 in2 pad of 2 oz copper

c) 125°C/W when mounted on a

minimum pad.

FDS4501H Rev C(W)