Fairchild FDS4480 service manual
February 2002
G
FDS4480
FDS4480
40V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
and fast switching speed.
DS(ON)
Applications
• DC/DC converter
D
D
D
D
D
D
D
D
SO-8
Pin 1
SO-8
S
Absolute Maximum Ratings T
G
S
S
S
S
S
o
=25
A
C unless otherwise noted
Features
• 10.8 A, 40 V. R
• Low gate charge (29 nC)
• High performance trench technology for extremely
low R
• High power and current handling capability
DS(ON)
5
6
7
8
= 12 mΩ @ VGS = 10 V
DS(ON)
4
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage 40 V
DSS
V
Gate-Source Voltage +30/–20 V
GSS
ID Drain Current – Continuous (Note 1a) 10.8 A
– Pulsed 45
PD
TJ, T
STG
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range –55 to +175 °C
1.4
1.2
W
Thermal Characteristics
R
Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
θJA
R
Thermal Resistance, Junction-to-Ambient (Note 1c) 125 °C/W
θJA
R
Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W
θJC
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2002 Fairchild Semiconductor Corporation
FDS4480 FDS4480 13’’ 12mm 2500 units
FDS4480 Rev D (W)
FDS4480
Electrical Characteristics T
Symbol
Drain-Source Avalanche Ratings (Note 2)
Parameter Test Conditions Min Typ Max Units
= 25°C unless otherwise noted
A
EAS Drain-Source Avalanche Energy Single Pulse, VDD=40V, ID=10.8A 240 mJ
IAS Drain-Source Avalanche Current 10.8 A
Off Characteristics
BV
Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 40 V
DSS
∆BVDSS
∆TJ
I
Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1 µA
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
42
mV/°C
Gate–Body Leakage, Forward VGS = 30 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
V
Gate Threshold Voltage VDS = VGS, ID = 250 µA 2 3.9 5 V
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
I
D(on)
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA, Referenced to 25°C
Static Drain–Source On–Resistance VGS = 10 V, ID = 10.8 A
VGS = 10 V,ID = 10.8 A, TJ=125°C
On–State Drain Current VGS = 10 V, VDS = 5 V 22 A
–8
8
13
12
21
mV/°C
mΩ
gFS Forward Transconductance VDS = 10 V, ID = 10.8 A 36 S
Dynamic Characteristics
C
Input Capacitance 1686 pF
iss
C
Output Capacitance 384 pF
oss
C
Reverse Transfer Capacitance
rss
VDS = 20 V, V
f = 1.0 MHz
= 0 V,
GS
185 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 12 22 ns
d(on)
tr Turn–On Rise Time 9 18 ns
t
Turn–Off Delay Time 30 48 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 29 41 nC
Qgs Gate–Source Charge 17 nC
Qgd Gate–Drain Charge
VDD = 20 V, ID = 1 A,
VGS = 10 V, R
GEN
= 6 Ω
VDS = 20 V, ID = 10.8 A,
VGS = 10 V
15 27 ns
4 nC
FDS4480 Rev D (W)
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