Fairchild FDS4470 service manual
December 2006
FDS4470
40V N-Channel PowerTrench® MOSFET
FDS4470
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
and fast switching speed.
DS(ON)
Applications
• DC/DC converter
D
D
D
D
D
D
D
D
SO-8
Pin 1
SO-8
S
Absolute Maximum Ratings T
G
G
S
S
S
S
S
o
=25
C unless otherwise noted
A
Features
• 12.5 A, 40 V. R
• Low gate charge (45 nC)
• High performance trench technology for extremely
DS(ON)
5
6
7
8
low R
• High power and current handling capability
= 9 mΩ @ VGS = 10 V
DS(ON)
4
3
2
1
Symbol Parameter Ratings Units
V
Drain-Source Voltage 40 V
DSS
V
Gate-Source Voltage +30/–20 V
GSS
ID Drain Current – Continuous (Note 1a) 12.5 A
– Pulsed 50
PD
TJ, T
STG
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
Operating and Storage Junction Temperature Range –55 to +175
(Note 1c)
1.4
1.2
W
°C
Thermal Characteristics
R
θJA
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a) 50
(Note 1c) 125
(Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
©2006 Fairchild Semiconductor Corporation
FDS4470 FDS4470 13’’ 12mm 2500 units
°C/W
°C/W
°C/W
FDS4470 Rev D1 (W)
FDS4470
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
EAS Drain-Source Avalanche Energy Single Pulse, VDD=40V, ID=12.5A 370 mJ
IAS Drain-Source Avalanche Current 12.5 A
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
ΔBVDSS
ΔT
I
Zero Gate Voltage Drain Current VDS = 32 V, VGS = 0 V 1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
J
Gate–Body Leakage, Forward VGS = 30 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
= 0 V, ID = 250 μA
V
GS
= 250 μA, Referenced to 25°C
I
D
40 V
42
mV/°C
μA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
ΔVGS(th)
ΔTJ
R
DS(on)
I
D(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source On–Resistance
On–State Drain Current VGS = 10 V, VDS = 5 V 25 A
= VGS, ID = 250 μA
V
DS
= 250 μA, Referenced to 25°C
I
D
VGS = 10 V, ID = 12.5 A
= 10 V, ID = 12.5 A,TJ=125°C
V
GS
gFS Forward Transconductance VDS = 10 V, ID = 12.5 A 45 S
2 3.9 5 V
–8
6
mV/°C
mΩ
9 9 14
Dynamic Characteristics
C
Input Capacitance 2659 pF
iss
C
Output Capacitance 605 pF
oss
C
Reverse Transfer Capacitance
rss
V
= 20 V, V
DS
f = 1.0 MHz
= 0 V,
GS
298 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 14 25 ns
d(on)
tr Turn–On Rise Time 12 22 ns
t
Turn–Off Delay Time 37 59 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 45 63 nC
Qgs Gate–Source Charge 11.2 nC
Qgd Gate–Drain Charge
V
= 20 V, ID = 1 A,
DD
= 10 V, R
V
GS
= 20 V, ID = 12.5 A,
V
DS
= 10 V
V
GS
GEN
= 6 Ω
29 46 ns
11 nC
FDS4470 Rev D1 (W)
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