Fairchild FDS4435BZ, FDS4435BZ Schematics

FDS4435BZ

P-Channel PowerTrench® MOSFET

-30V, -8.8A, 20m:

Features

 Max r

 Max r

 Extended V

 HBM ESD protection level of ±3.8KV typical (note 3)

 High performance trench technology for extremely low r

 High power and current handling capability

 Termination is Lead-free and RoHS compliant

= 20m: at VGS = -10V, ID = -8.8A

DS(on)

= 35m: at VGS = -4.5V, ID = -6.7A

DS(on)

range (-25V) for battery applications

GSS

D

D

D

DS(on)

D

April 2009

General Description

This P-Channel MOSFET is produced using Fairchild

®

Semiconductor’s advanced PowerTrench

been especially tailored to minimize the on-state resistance.

This device is well suited for Power Management and load

switching applications common in Notebook Computers and

Portable Battery Packs.

D

5

6

D

process that has

G

4

3

S

FDS4435BZ P-Channel PowerTrench

®

MOSFET

S

7

G

S

S

Pin 1

SO-8

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

P

D

E

AS

, T

T

J

STG

Drain to Source Voltage -30 V

Gate to Source Voltage ±25 V

Drain Current -Continuous TA= 25°C (Note 1a) -8.8

-Pulsed -50

Power Dissipation TA = 25°C (Note 1a) 2.5

Power Dissipation T

Single Pulse Avalanche Energy (Note 4) 24 mJ

Operating and Storage Junction Temperature Range -55 to +150 °C

S

= 25°C unless otherwise noted

A

D

8

D

= 25°C (Note 1b) 1.0

A

2

S

1

Thermal Characteristics

R

TJC

R

TJA

Thermal Resistance, Junction to Case 25

Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDS4435BZ FDS4435BZ SO-8 13’’ 12mm 2500units

A

W

°C/W

©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C

1

1

www.fairchildsemi.com

FDS4435BZ P-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

'BV
'T

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = -250PA, VGS = 0V -30 V

Breakdown Voltage Temperature
Coefficient

I

= -250PA, referenced to 25°C -21 mV/°C

D

Zero Gate Voltage Drain Current VDS = -24V, VGS= 0V 1 PA

Gate to Source Leakage Current VGS = ±25V, VDS= 0V ±10 PA

On Characteristics

V

GS(th)

'V
'T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = -250PA -1 -2.1 -3 V

Gate to Source Threshold Voltage
Temperature Coefficient

Static Drain to Source On Resistance

I

= -250PA, referenced to 25°C 6 mV/°C

D

V

= -10V, ID = -8.8A 16 20

GS

= -4.5V, ID = -6.7A 26 35

GS

= -10V, ID = -8.8A, TJ = 125°C 22 28

V

GS

Forward Transconductance VDS = -5V, ID = -8.8A 24 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 275 365 pF

Reverse Transfer Capacitance 230 345 pF

= -15V, VGS = 0V,

V

DS

f = 1MHz

Gate Resistance f = 1MHz 4.5 :

1385 1845 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

Q

g

g

gs

gd

Turn-On Delay Time

Rise Time 612ns

Turn-Off Delay Time 30 48 ns

V

= -15V, ID = -8.8A,

DD

V

= -10V, R

GS

GEN

= 6:

10 20 ns

Fall Time 12 22 ns

Total Gate Charge VGS= 0V to -10V

Total Gate Charge VGS= 0V to -5V 16 23 nC

Gate to Source Charge 5.2 nC

VDD = -15V,
I

= -8.8A

D

28 40 nC

Gate to Drain “Miller” Charge 7.4 nC

m:V

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

TJA

the user's board design.

2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.

3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

4. Starting T

©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C1

Source to Drain Diode Forward Voltage VGS= 0V, IS= -8.8A (Note 2) -0.9 -1.2 V

Reverse Recovery Time

Reverse Recovery Charge 23 35 nC

is determined with the device mou nted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

a. 50°C/W when mounted on

2

pad of 2 oz copper.

a 1 in

= 25°C, L = 1mH, IAS = -7A, VDD = -30V, VGS = -10V

J

= -8.8A, di/dt = 100A/Ps

I

F

2

29 44 ns

is guaranteed by design while R

TJC

b. 125°C/W when mounted on
a minimum pad of 2 oz copper.

is determined by

TCA

www.fairchildsemi.com

FDS4435BZ P-Channel PowerTrench

Typical Characteristics T

50

40

30

20

, DRAIN CURRENT (A)

D

-I

10

0

01234

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1.

1.6

1.4

On-Region Characteristics Figure 2.

ID = -8.8A
V

= -10V

GS

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (oC)

VGS = -10V
VGS = -5V

= 25°C unless otherwise noted

J

VGS = -4.5V

VGS = -4V

VGS = -3.5V

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

4.0

3.5

3.0

2.5

VGS = -3.5V

VGS = -4V

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

VGS = -4.5V

VGS = -5V

2.0

NORMALIZED

1.5

VGS = -10V

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5
0 1020304050

-ID, DRAIN CURRENT(A)

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

60

ID= -8.8A

50

(m:)

40

, DRAIN TO

30

DS(on)

r

20

SOURCE ON-RESISTANCE

10

246810

-VGS, GATE TO SOURCE VOLTAGE (V)

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

TJ= 125oC

TJ= 25oC

®

MOSFET

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

vs Junction Temperature

50

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

40

VDS= -5V

30

20

, DRAIN CURRENT (A)

D

10

-I

0

12345

TJ= 25oC

-VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

©2009 Fairchild Semiconductor Corporation
FDS4435BZ Rev.C

1

TJ= 150oC

TJ =-55oC

Figure 4.

O n - R es i s t a n c e vs G a t e t o

Source Voltage

100

VGS= 0V

10

1

0.1

TJ= 150oC

0.01

0.001

, REVERSE DRAIN CURRENT (A)

S

-I

0.0001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = 25oC

TJ = -55oC

Forward Voltage vs Source Current

3

www.fairchildsemi.com