Fairchild FDS4141 service manual
FDS4141
P-Channel PowerTrench® MOSFET
-40V, -10.8A, 13.0mΩ
Features
Max r
Max r
High performance trench technology for extremely low r
RoHS Compliant
= 13.0mΩ at VGS = -10V, ID = -10.5A
DS(on)
= 19.0mΩ at VGS = -4.5V, ID = -8.4A
DS(on)
DS(on)
General Description
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench
deliver low
superior performance benefit in the applications
switching performance capability reducing power dissipation
losses in converter/inverter applications
r
Applications
Control switch in synchronous & non-synchronous buck
Load switch
Inverter
and optimized BV
DS(on)
November 2007
®
technology to
capability to offer
DSS
.
and optimized
FDS4141 P-Channel PowerTrench
®
MOSFET
D
D
D
D
SO-8
Pin 1
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage -40 V
Gate to Source Voltage ±20 V
Drain Current -Continuous -10.8
-Pulsed -36
Single Pulse Avalanche Energy (Note 3) 294 mJ
Power Dissipation TA = 25°C (Note 1a) 5
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
S
A
G
S
S
= 25°C unless otherwise noted
= 25°C (Note 1b) 2.5
A
5
D
D
6
D
7
D
8
G
4
S
3
S
2
S
1
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case (Note 1) 25
Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
A
W
°C/W
Device Marking Device Package Reel Size Tape Width Quantity
FDS4141 FDS4141 SO-8 13’’ 12mm 2500units
©2007 Fairchild Semiconductor Corporation
FDS4141 Rev.C
1
www.fairchildsemi.com
FDS4141 P-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -40 V
Breakdown Voltage Temperature
Coefficient
ID = -250µA, referenced to 25°C -33 mV/°C
Zero Gate Voltage Drain Current VDS = -32V, -1 µA
Gate to Source Leakage Current VGS = ±20V, V
= 0V ±100 nA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -1.0 -1.6 -3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance VDD = -5V, ID = -10.5A 37 S
ID = -250µA, referenced to 25°C 5.3 mV/°C
VGS = -10V, ID = -10.5A 11.0 13.0
VGS = -10V, ID = -10.5A, TJ= 125°C 16.8 19.9
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 355 475 pF
Reverse Transfer Capacitance 190 285 pF
VDS = -20V, VGS = 0V,
f = 1MHz
2005 2670 pF
Gate Resistance f = 1MHz 5 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 5 10 ns
Turn-Off Delay Time 42 68 ns
VDD = -20V, ID = -10.5A,
VGS = -10V, R
GEN
= 6Ω
10 20 ns
Fall Time 12 22 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 6 nC
= 0V to -10V
GS
= 0V to -5V 19 27 nC
GS
VDD = -20V,
35 49 nC
ID = -10.5A
Gate to Drain “Miller” Charge 7 nC
mΩVGS = -4.5V, ID = -8.4A 15.2 19.0
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. UIL condition: Starting T
©2007 Fairchild Semiconductor Corporation
FDS4141 Rev.C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 14 26 nC
= 25°C, L = 3mH, I
J
a) 50°C/W when mounted on a
2
1in
pad of 2 oz copper.
= -14A, VDD = -40V, VGS = -10V.
AS
V
= 0V, IS = -10.5A (Note 2) -0.8 -1.3
GS
V
= 0V, IS = -2.1A (Note 2) -0.7 -1.2
GS
IF = -10.5A, di/dt = 100A/µs
θJC
2
26 42 ns
is guaranteed by design while R
b) 125°C/W when mounted on a
minimum pad.
V
is determined by
θCA
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