Fairchild FDS3992 service manual

FDS3992

Dual N-Channel PowerTrench® MOSFET 100V, 4.5A, 62mΩ

FDS3992

August 2004

Features

•r

•Q

• Low Miller Charge

•Low Q

• Optimized efficiency at high frequencies

• UIS Capability (Single Pulse and Repetitive Pulse)

= 54mΩ (Typ.), V

DS(ON)

(tot) = 11nC (Typ.), V

g

Body Diode

RR

= 10V, ID = 4.5A

GS

= 10V

GS

Applications

• DC/DC converters and Off-Line UPS

• Distributed Power Architectures and VRMs

• Primary Switch for 24V and 48V Systems

• High Voltage Synchronous Rectifier

• Direct Injection / Diesel Injection Systems

• 42V Automotive Load Control

Formerly developmental type 82745

Branding Dash

1

2

3

4

5

• Electronic Valve Train Systems

(1)

(2)

(3)

(4)

(8)

(7)

(6)

(5)

SO-8

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 100 V

Gate to Source Voltage ±20 V

Drain Current

Continuous (T

= 25oC, VGS = 10V, R

A

= 100oC, VGS = 10V, R

A

Pulsed Figure 4 A

Single Pulse Avalanche Energy (Note 1) 167 mJ

Total Package Power Dissipation 2.5 W

o

Derate above 25

C20mW/

Operating and Storage Temperature -55 to 150

= 25°C unless otherwise noted

A

= 50oC/W)

θJA

= 50oC/W) 2.8 A

θJA

4.5 A

o

C

o

C

Thermal Characteristics

R

θJA

R

θJA

R

θJC

Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) 50

Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 85

Thermal Resistance, Junction to Case (Note 2) 25

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDS3992 FDS3992 SO-8 330mm 12mm 2500 units

o

C/W

o

C/W

o

C/W

FDS3992 Rev. B1

FDS3992

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B

I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 100 - - V

V

= 80V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- - 250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

Drain to Source On Resistance

= 4.5A, V

I

D

I

= 2A, VGS = 6V - 0.072 0.108

D

I

= 4.5A, V

D

T

= 150oC

C

= 10V - 0.054 0.062

GS

= 10V,

GS

- 0.107 0.123

Dynamic Characteristics

C

Q

ISS

OSS

RSS

g(TOT)

g(TH)

gs

gs2

gd

Input Capacitance

Output Capacitance - 118 - pF

Reverse Transfer Capacitance - 27 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total Gate Charge at 10V VGS = 0V to 10V

Threshold Gate Charge VGS = 0V to 2V - 1.4 1.9 nC

Gate to Source Gate Charge - 3.5 - nC

Gate Charge Threshold to Plateau - 2.1 - nC

V

DD

= 4.5A

I

D

= 1.0mA

I

g

= 50V

Gate to Drain “Miller” Charge - 2.8 - nC

- 750 - pF

-1115nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time

Turn-On Delay Time - 8 - ns

Rise Time - 23 - ns

Turn-Off Delay Time - 28 - ns

Fall Time - 26 - ns

Turn-Off Time - - 81 ns

(VGS = 10V)

= 50V, ID = 4.5A

V

DD

= 10V, RGS = 27Ω

V

GS

- - 47 ns

Drain-Source Diode Characteristics

I

= 4.5A - - 1.25 V

V

SD

t

rr

Q

RR

Notes: 1: Starting TJ = 25°C, L = 37mH, IAS = 3A. 2: R

θJA

drain pins . R

3: R

θJA

Source to Drain Diode Voltage

Reverse Recovery Time ISD= 4.5A, dISD/dt= 100A/µs- - 48 ns

Reverse Recovery Charge ISD= 4.5A, dISD/dt= 100A/µs- - 65nC

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the

is measured with 1.0 in2 copper on FR-4 board

is guaranteed by design while R

θJC

is determined by the user’s board design.

θCA

SD

= 2A - - 1.0 V

I

SD

FDS3992

Typical Characteristics T

= 25°C unless otherwise noted

A

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TA, AMBIENT TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

1

0.5

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

0.01

θJA

Z

THERMAL IMPEDANCE

0.001

-5

10

SINGLE PULSE

-4

10

-3

10

5

4

3

2

, DRAIN CURRENT (A)

D

I

1

0

125

25 50 75 100 125 150

Figure 2. Maximum Continuous Drain Current vs

-2

10

t, RECTANGULAR PULSE DURATION (s)

-1

10

TA, AMBIENT TEMPERATURE (oC)

Ambient Temperature

NOTES: DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

0

10

1

10

V

= 10V

GS

R

=50oC/W

θJA

P

DM

t

1

t

2

x R

+ T

θJA

A

2

10

3

10

Figure 3. Normalized Maximum Transient Thermal Impedance

200

100

VGS = 10V

10

, PEAK CURRENT (A)

DM

I

1

-5

10

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

-4

10

TA = 25oC

FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS:

150 - T

I = I

25

125

-3

-2

10

-1

10

t, PULSE WIDTH (s)

0

10

1

10

2

10

C

3

10

Figure 4. Peak Current Capability

Typical Characteristics T

= 25°C unless otherwise noted

A

FDS3992

200

, DRAIN CURRENT (A) I

D

0.01

100

10

1

0.1 SINGLE PULSE

TJ = MAX RATED TC = 25oC

OPERATION IN THIS

AREA MAY BE

LIMITED BY r

DS(ON)

1101003000.1

VDS, DRAIN TO SOURCE VOLTAGE (V)

10µs

100µs

1ms

10ms

100ms

1s

Figure 5. Forward Bias Safe Operating Area

30

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

V

= 15V

DD

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

TJ = 25oC

3.5 4.0 4.5 5.0 5.5 6.0 6.5

TJ = 150oC

TJ = -55oC

VGS, GATE TO SOURCE VOLTAGE (V)

7

STARTING TJ = 25oC

STARTING TJ = 150oC

1

, AVALANCHE CURRENT (A)

AS

If R = 0

I

tAV = (L)(IAS)/(1.3*RATED BV If R ≠ 0

tAV = (L/R)ln[(IAS*R)/(1.3*RATED BV

0.1

0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms)

DSS

- VDD)

DSS

- VDD) +1]

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

30

TA = 25oC

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

0 0.5 1.0 1.5 2.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 10V

VGS = 7V

VGS = 6V

VGS = 5V

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

80

VGS = 6V

75

70

65

60

VGS = 10V

55

DRAIN TO SOURCE ON RESISTANCE (m Ω)

50

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 , DRAIN CURRENT (A)

I

D

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

Figure 9. Drain to Source On Resistance vs Drain

Current

2.5 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID = 4.5A

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature