Fairchild FDS3692 service manual

FDS3692

N-Channel PowerTrench® MOSFET 100V, 4.5A, 60mΩ

FDS3692

September 2002

Features

•r

•Q

• Low Miller Charge

•Low Q

• Optimized eff iciency at high frequ encies

• UIS Capability (Single Pulse and Repetitive Pulse)

= 50mΩ (Typ.), V

DS(ON)

(tot) = 11nC (Typ.), V

g

Body Diode

RR

= 10V, ID = 4.5A

GS

= 10V

GS

Applications

• DC/DC converters and Off-Line UPS

• Distributed Power Architectures and VRMs

• PrimarySwitch for 24V and 48V Systems

• High Voltage Synchronous R ectifier

• Direct Injection / Diesel Injection Systems

• 42V Automotive Load Control

Formerly developmental type 82745

Branding Dash

1

2

3

4

5

• Electronic Valve Train Systems

5 6 7 8

SO-8

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GS

I

D

E

AS

P

D

T

, T

J

STG

Drain to Source Voltage 100 V Gate to Source Voltage ±20 V Drain Curr e nt Continuous (T Continuous (T

= 25oC, VGS = 10V, R

A

= 100oC, VGS = 10V, R

A

Pulsed Figure 4 A Single Pulse Avalanche Energy (Note 1) 171 mJ Power dissipation 2.5 W

o

Derate above 25

C20mW/

Operating and Storage Temperature -55 to 150

= 25°C unless otherwise noted

A

= 50oC/W)

θJA

= 50oC/W) 2.8 A

θJA

4.5 A

4 3 2 1

o

C

o

C

Thermal Characteristi cs

R

θJA

R

θJA

R

θJC

ThermalResistance,Junction to Ambientat 10 seconds (Note 3) 50 ThermalResistance,Junction to Ambientat 1000 seconds (Note 3) 85 ThermalResistance,Junctionto Case (Note 2) 25

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDS369 2 FDS3692 SO-8 330mm 12mm 2500 un its

o

C/W

o

C/W

o

C/W

FDS3692 Rev. B

FDS3692

Electrical Characteristics T

= 25°C unl ess otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B I

DSS

I

GSS

VDSS

Drain t o Source Breakdown Volta ge ID = 250µA, VGS = 0V 100 - - V

V

= 80V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- - 250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

Drain to Source On Resistance

= 4.5A, V

I

D

I

= 2A, VGS = 6V - 0.064 0.096

D

I

= 4.5A, V

D

T

= 150oC

C

= 10V - 0.050 0.060

GS

= 10V,

GS

- 0.101 0.122

Dynamic Characteristics

C C C Q Q Q Q Q

ISS OSS RSS

g(TOT) g(TH) gs gs2 gd

Input Capacitance Output Capacitance - 115 - pF Reverse Transfer Capacitance - 27 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total G ate Ch arg e at 10 V VGS = 0V to 10V Threshold Gate Charge VGS = 0V to 2V - 1.4 1.9 nC Gate to Source Gate Charge - 3.5 - nC Gate Charge Threshold to Plateau - 2.1 - nC

V

DD

I

= 4.5A

D

I

= 1.0m A

g

= 50V

Gate to Drain “Miller” Charge - 2.8 - nC

-746- pF

-1115nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time Turn-On Delay Time - 9.8 - ns Rise Time - 26 - ns T u rn-Off Delay Time - 34 - ns Fall Time - 26 - ns Turn-Off Time - - 90 ns

(VGS = 10V)

V

= 50V, ID = 4.5A

DD

V

= 10V, RGS = 26Ω

GS

--54ns

Drain-Source Diode Characteristics

I

= 4.5A - - 1.25 V

V

SD

t

rr

Q

RR

Notes: 1: Starting T 2: R

θJA

drain pins. R

3: R

θJA

Source to Drain Di ode Voltage Reverse Recovery Time ISD= 4.5A, dISD/dt= 100A/µs- - 47ns

Reverse Recovered Charge ISD= 4.5A, dISD/dt= 100A/µs- - 64nC

= 25°C, L = 38mH, IAS = 3A.

J

is the sum of the junction-to-case and cas e-to-a mbient thermal r esistance wher e the case thermal reference is defined as the solder mounting su rface of the is measured with 1.0 in2 copper on FR-4 board

is guaranteed by design while R

θJC

is determined by the user’s board design.

θCA

SD

I

= 2A - - 1.0 V

SD

FDS3692

Typical Characteristics T

= 25°C unl ess otherwise noted

A

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TA, AMBIENT TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

1

0.5

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

0.01

θJA

Z

THERMAL IMPEDANCE

0.001

-5

10

SINGLE PULSE

-4

10

-3

10

5

4

3

2

, DRAIN CURRENT (A)

D

I

1

0

125

25 50 75 100 125 150

Figure 2. Maximum Continuous Drain Curr ent vs

-2

10

t, RECTANGULAR PULSE DURATION (s)

-1

10

TC, CASE TEMPERATURE (oC)

Case Temperature

NOTES: DUTY FACTOR: D = t

PEAK TJ = PDM x Z

0

1

10

V

= 10V

GS

R

=50oC/W

θJA

P

DM

t

1

t

2

1/t2

x R

+ T

θJA

A

2

10

3

10

Figure 3. Normalized Maximum Transient Thermal Impedance

200

100

TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION

VGS = 10V

10

, PEAK CURRENT (A)

DM

I

1

-5

10

-4

10

-3

10

-2

10

t, PULSE WIDTH (s)

-1

10

0

10

TA = 25oC FOR TEMPERATURES

o

ABOVE 25 CURRENT AS FOLLOWS:

I = I

25

1

10

C DERATE PEAK

150 - T

C

125

2

3

10

Figure 4. Peak Current Capability

Typical Characteristics T

= 25°C unl ess otherwise noted

A

FDS3692

200

, DRAIN CURRENT (A) I

D

0.01

100

10

1

0.1 SINGLE PULSE

TJ = MAX R ATED T

OPERATION IN THIS

AREA MAY BE

LIMITED BY r

= 25oC

C

DS(ON)

110100

VDS, DRAIN TO SOURCE VOLTAGE (V)

10µs

100µs

1ms 10ms

100ms

1s

Figure 5. Forward Bias Safe Operating Area

30

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX V

= 15V

DD

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

TJ = 25oC

3.5 4.0 4.5 5.0 5.5 6.0 6.5

TJ = 150oC

TJ = -55oC

VGS, GATE TO SOURCE VOLTAGE (V)

7

STARTING TJ = 25oC

STARTING TJ = 150oC

1

, AVALANCHE CURRENT (A)

If R = 0

AS

I

tAV = (L)(IAS)/(1.3*RATED BV If R ≠ 0

t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

3000.1

0.1

0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms)

DSS

- VDD)

- VDD) +1]

DSS

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

30

TA = 25oC

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

0 0.5 1.0 1.5 2.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 10V

VGS = 6V

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

VGS = 7V

VGS = 5V

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

70

VGS = 6V

65

60

55

VGS = 10V

50

45

DRAIN TO SOURCE ON RESISTANCE (m Ω)

1.01.52.02.53.03.54.04.5 I

, DRAIN CURRENT (A)

D

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

Figure 9. Drain to So urce On Resistanc e v s Drai n

Current

2.5

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID = 4.5A

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature