Fairchild FDS3601 service manual
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FDS3601
100V Dual N-Channel PowerTrench
MOSFET
FDS3601
August 2001
General Description
These N-Channel MOSFETs have been designed
specifically to improve the overall efficiency of DC/ DC
converters using either synchronous or conventional
switching PWM controll e r s.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
specifica tions. The result is a MOSFET that is
R
DS(ON)
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
Features
• 1.3 A, 100 V. R
R
• Fast switching speed
• Low gate charge (3.7nC typical)
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability
= 480 mΩ @ VGS = 10 V
DS(ON)
= 530 mΩ @ VGS = 6 V
DS(ON)
D1
D1
D2
D2
G1
S2
S1
G2
SO-8
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
5
Q1
6
7
Q2
8
4
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 100 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) 1.3 A
– Pulsed 6
Power Dissipation for Dual Operation 2
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range –55 to +175
±20
1.0
0.9
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 78
Thermal Resistance, Junction-to-Case (Note 1) 40
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS3601 FDS3601 13’’ 12mm 2500 units
2001 Fairchild Semiconductor Corporation
°C/W
°C/W
FDS3601 Rev C(W)
FDS3601
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
DSS
I
AR
Drain-Source Avalanche Energy Single Pulse, VDD = 50 V, ID= 1.3 A 26 mJ
Drain-Source Avalanche Current 1.3 A
Off Characteristics
BV
DSS
∆BVDSS
∆T
J
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
= 0 V, ID = 250 µA
V
GS
= 250 µA,Referenced to 25°C
I
D
Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 10
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
100 V
105
mV/°C
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
J
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
= VGS, ID = 250 µA
V
DS
= 250 µA,Referenced to 25°C
I
D
V
= 10 V, ID = 1.3 A
GS
= 6 V, ID = 1.3 A
V
GS
= 10 V, ID = 1.3 A, TJ= 125°C
V
GS
On–State Drain Current VGS = 10 V, VDS = 10 V 3 A
Forward Transconductance VDS = 5V, ID = 1.3 A 3.6 S
22.64 V
–5
350
376
664
mV/°C
480
530
955
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 153 pF
Output Capacitance 5 pF
Reverse Transfer Capacitance
= 50 V, V
V
DS
f = 1.0 MHz
GS
= 0 V,
1pF
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn–On Delay Time 8 16 ns
Turn–On Rise Time 4 8 ns
V
= 50 V, ID = 1 A,
DD
= 10 V, R
V
GS
GEN
= 6 Ω
Turn–Off Delay Time 11 20 ns
Turn–Off Fall Time
Total Gate Charge 3.7 5 nC
Gate–Source Charge 0.8 nC
= 50 V, ID = 1.3 A,
V
DS
= 10 V
V
GS
Gate–Drain Charge
612ns
1nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
θJA
the drain pins. R
Maximum Continuous Drain–Source Diode Forward Current 1.3 A
Drain–Source Diode Forward
VGS = 0 V, IS = 1.3 A (Note 2) 0.8 1.2 V
Voltage
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
is guaranteed by design while R
θJC
is determined by the user's board design.
θCA
µA
mΩ
a) 78°C/W when
mounted on a
2
pad of 2
0.5in
oz copper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
b) 125°C/W when
mounted on a
2
pad of
0.02 in
2 oz copper
c) 135°C/W when
mounted on a
minimum pad.
FDS3601 Rev C(W)
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