Fairchild FDS3590 service manual
FDS3590
80V N-Channel PowerTrench® MOSFET
FDS3590
November 2000
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/ DC
converters using either synchronous or conventional
switching PWM controller s .
Features
• 6.5 A, 80 V R
• Low gate charge
= 39 mΩ @ VGS = 10 V
DS(ON)
R
= 44 mΩ @ VGS = 6 V
DS(ON)
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
specifications.
R
DS(ON)
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
D
D
• Fast switching speed
• High performance trench technology for extremely
low R
DS(ON)
• High power and current handling capability
5
4
D
D
G
S
SO-8
S
S
Absolute Maximum Ratings T
=25oC unless otherwise noted
A
6
7
8
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 80 V
Gate-Source Voltage
±20
Drain Current – Continuous (Note 1a) 6.5 A
– Pulsed 50
Power Dissipation for Single Operation (Note 1a) 2.5
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature
1.2
1.0
-55 to +150
Range
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 50
Thermal Resistance, Junction-to-Case (Note 1) 25
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDS3590 FDS3590 13’’ 12mm 2500 units
2000 Fairchild Semiconductor Corporation
°C/W
°C/W
FDS3590 Rev C (W)
FDS3590
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
W
DSS
I
AR
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source
Avalanche Current
VDD = 40 V, ID = 6.5 A 175 mJ
6.5 A
Off Characteristics
BV
DSS
∆BVDSS
===∆T
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
J
V
= 0 V, ID = 250 µA
GS
I
= 250 µA, Referenced to 25°C
D
80 V
88
Zero Gate Voltage Drain Current VDS = 64 V, VGS = 0 V 1
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
mV/°C
µA
On Characteristics (Note 2)
V
GS(th)n
∆VGS(th)
===∆T
R
DS(on)
I
D(on)
G
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
V
= VGS,ID = 250 µA
DS
= 250 µA, Referenced to 25°C
I
D
VGS = 10 V, ID = 6.5 A
= 10 V, ID = 6.5 A, TJ = 125°C
V
GS
= 6 V, ID = 4.5 A
V
GS
24V
–6
32
61
34
On–State Drain Current VGS = 10 V, VDS = 5 V 25 A
Forward Transconductance VGS = 10 V, ID = 6.5 A 25 S
39
86
44
mV/°C
mΩ
Dynamic Characteri stics
= 40 V, V
C
iss
C
oss
C
rss
Input Capacitance 1180 pF
Output Capacitance 171 pF
Reverse Transfer Capacitance
V
DS
f = 1.0 MHz
GS
= 0 V,
50 pF
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
Turn–On Delay Time 11 20 ns
Turn–On Rise Time 8 16 ns
Turn–Off Delay Time 26 50 ns
Turn–Off Fall Time
g
gs
gd
Total Gate Charge 25 35 nC
Gate–Source Charge 4.5 nC
Gate–Drain Charge
V
= 40 V, ID = 1 A,
DD
= 10 V, R
V
GS
V
= 40 V, ID = 6.5 A,
DS
= 10 V
V
GS
GEN
= 6 Ω
12 25 ns
5.8 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
θJA
the drain pins. R
Maximum Continuous Drain–Source Diode Forward Current 2.1 A
Drain–Source Diode Forward
VGS = 0 V, IS = 2.1 A (Note 2) 0.74 1.2 V
Voltage
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
is guaranteed by design while R
θJC
a) 50 °C/W when
mounted on a 1in
pad of 2 oz copper
is determined by the user's board design.
θCA
2
b) 105 °C/W when
mounted on a 0.04
in2 pad of 2 oz
copper
c) 125 °C/W when mounted on a
minimum pad.
FDS3590 Rev C. (W)
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