Fairchild FDS3580 service manual
FDS3580
80V N-Channel PowerTrench
MOSFET
FDS3580
December 2000
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable R
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power supply
designs with higher overall efficiency .
D
D
DS(ON)
D
D
G
S
SO-8
Absolute Maximum Ratings
S
S
TA = 25°C unless otherwise noted
Features
• 7.6 A, 80 V. R
R
= 0.029 Ω @ V
DS(ON
)
= 0.033 Ω @ V
DS(ON)
= 10 V
GS
= 6 V.
GS
• Low gate charge (34nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R
DS(ON)
.
• High power and current handling capability.
5
6
7
8
4
3
2
1
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage 80 V
Gate-Source Voltage
Drain Current - Continuous
- Pulsed 50
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range -55 to +150
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
20
±
7.6 A
2.5 W
1.2
1
Thermal Characteristics
R
JA
θ
R
JC
θ
Thermal Resistance, Junction-to-Am bient
Thermal Resistance, Junction-to-C ase
(Note 1a)
(Note 1)
50
25
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
FDS3580 FDS3580 13’’ 12mm 2500 units
2000 Fairchild Semiconductor International
V
C
°
C/W
°
C/W
°
FDS3580 Rev. C
FDS3580
yp
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min T
Drain-Source Avalanche Ratings
W
DSS
I
AR
Single Pul se Dr ain-Source
Avalanche Energy
Maximum Drain -Source Avalanche Current 7.6 A
(Note 2)
VDD = 40 V, ID = 7.6 A 245 mJ
Off Characteristics
BV
DSS
∆
DSS
BV
∆
T
J
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
∆
GS(th)
V
∆
T
J
R
DS(on)
I
D(on)
g
FS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperat ure
Coefficient
V
= 0 V, ID = 250 µA
GS
I
= 250 µA, Referenced to 25°C
D
80 V
Zero Gate Voltage Drai n Current VDS = 64 V, VGS = 0 V 1
Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
V
= VGS, ID = 250 µA
DS
I
= 250 µA, Referenced to 25°C
D
VGS = 10 V, ID = 7.6 A
= 10 V, ID = 7.6 A, TJ=125°C
V
GS
V
= 6 V, ID = 7 A
GS
22.54 V
On-State Drain Current VGS = 10 V, VDS = 5 V 30 A
Forward Transconductance VDS = 5 V, ID = 7.6 A 28 S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 1800 pF
Output Capacitance 180 pF
= 25 V, VGS = 0 V,
V
DS
f = 1.0 MHz
Reverse Transfer Capacitance
Max Units
81
-7
0.029
0.022
0.055
0.037
0.033
0.024
90 pF
mV/°C
µ
A
mV/°C
Ω
(Note 2)
Switching Characteristics
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn-On Delay Time 13 26 ns
Turn-On Rise Time 8 20 ns
Turn-Off Delay Time 34 60 ns
Turn-Off Fall Time
Total Gate Charge 34 46 nC
Gate-Source Charge 6.1 nC
Gate-Drain Charge
= 40 V, ID = 1 A,
V
DD
= 10 V, R
V
GS
= 40 V, ID = 7.6 A,
V
DS
V
= 10 V
GS
GEN
= 6
Ω
16 30 ns
6.9 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1: R
θJA
drain pins. R
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Continuous Drain-Source Diode Forward Current 2.1 A
Drain-Source Diode Forward VoltageVGS = 0 V, IS = 2.1 A
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
is guaranteed by design while R
θJC
a) 50° C/W when
is determined by the user's board design.
θCA
mounted on a 1 in
pad of 2 oz. copper.
2
b) 105° C/W when
mounted on a 0.04 in
pad of 2 oz. copper.
(Note 2)
2
0.74 1.2 V
c) 125° C/W when
mounted on a minimum
pad.
FDS3580 Rev. C
Loading...