Fairchild FDS3572 service manual

FDS3572

N-Channel PowerTrench® MOSFET
80V, 8.9A, 16mΩ

FDS3572

November 2003

Features

•r

•Q

• Low Miller Charge

•Low Q

= 14mΩ (Typ.), V

DS(ON)

= 31nC (Typ.), V

g(tot)

Body Diode

RR

= 10V, ID = 8.9A

GS

= 10V

GS

Applications

• Primary switch for Isolated DC/DC converters

• Distributed Power and Intermediate Bus Architectures

• High Voltage Synchronous Rectifier for DC Bus
Converters

• Optimized efficiency at high frequencies

• UIS Capability (Single Pulse and Repetitive Pulse)

Formerly developmental type 82663

Branding Dash

5

1

2

3

4

5

6

7

8

SO-8

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 80 V

Gate to Source Voltage ±20 V

Drain Current

Continuous (T

Continuous (T

= 25oC, VGS = 10V, R

A

= 100oC, VGS = 10V, R

A

Pulsed Figure 4 A

Single Pulse Avalanche Energy (Note 1) 515 mJ

Power dissipation 2.5 W

o

Derate above 25

C20mW/

Operating and Storage Temperature -55 to 150

= 25°C unless otherwise noted

A

= 50oC/W)

θJA

= 50oC/W) 5.6 A

θJA

8.9 A

4

3

2

1

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

R

θJA

Thermal Resistance, Junction to Case (Note 2) 25

Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) 50

Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 85

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDS3572 FDS3572 SO-8 330mm 12mm 2500 units

©2003 Fairchild Semiconductor Corporation

o

C/W

o

C/W

o

C/W

FDS3572 Rev. A

FDS3572

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B

I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 80 - - V

V

= 60V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TA = 150oC- - 250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

Drain to Source On Resistance

= 8.9A, V

I

D

I

= 5.6A, VGS = 6V - 0.019 0.029

D

I

= 8.9A, V

D

T

= 150oC

A

= 10V - 0.014 0.016

GS

= 10V,

GS

- 0.027 0.032

Dynamic Characteristics

C

C

C

Q

Q

Q

Q

Q

ISS

OSS

RSS

g(tot)

g(TH)

gs

gs2

gd

Input Capacitance

Output Capacitance - 320 - pF

Reverse Transfer Capacitance - 85 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total Gate Charge at 10V VGS = 0V to 10V

Threshold Gate Charge VGS = 0V to 2V - 4 5.2 nC

Gate to Source Gate Charge - 9 - nC

Gate Charge Threshold to Plateau - 5 - nC

V

DD

= 8.9A

I

D

= 1.0mA

I

g

= 40V

Gate to Drain “Miller” Charge - 7.5 - nC

- 1990 - pF

-3141nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time

Turn-On Delay Time - 13 - ns

Rise Time - 14 - ns

Turn-Off Delay Time - 31 - ns

Fall Time - 13 - ns

Turn-Off Time - - 67 ns

(VGS = 10V)

= 40V, ID = 8.9A

V

DD

= 10V, RGS = 10Ω

V

GS

- - 40 ns

Drain-Source Diode Characteristics

I

= 8.9A - - 1.25 V

V

SD

t

rr

Q

RR

Notes:
1: Starting TJ = 25°C, L = 21mH, IAS = 7A.
2: R

θJA

drain pins . R

3: R

θJA

Source to Drain Diode Voltage

Reverse Recovery Time ISD= 8.9A, dISD/dt= 100A/µs- - 50 ns

Reverse Recovered Charge ISD= 8.9A, dISD/dt= 100A/µs- - 70nC

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the

is measured with 1.0 in2 copper on FR-4 board

is guaranteed by design while R

θJC

is determined by the user’s board design.

θJA

SD

= 4.3A - - 1.0 V

I

SD

©2003 Fairchild Semiconductor Corporation FDS3572 Rev. A

FDS3572

Typical Characteristics T

= 25°C unless otherwise noted

A

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TA, AMBIENT TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

1

0.5

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

0.01

θJA

Z

THERMAL IMPEDANCE

0.001

-5

10

SINGLE PULSE

-4

10

-3

10

10

8

6

4

, DRAIN CURRENT (A)

D

I

2

R

=50oC/W

θJA

125

0

25 50 75 100 125 150

Figure 2. Maximum Continuous Drain Current vs

-2

10

t, RECTANGULAR PULSE DURATION (s)

-1

10

10

TA, AMBIENT TEMPERATURE (oC)

Ambient Temperature

P

DM

NOTES:
DUTY FACTOR: D = t1/t

0

PEAK TJ = PDM x Z

1

10

θJA

V

= 10V

GS

R

=50oC/W

θJA

t

1

t

2

2

x R

+ T

θJA

A

2

10

3

10

Figure 3. Normalized Maximum Transient Thermal Impedance

1000

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

VGS = 10V

100

, PEAK CURRENT (A)

DM

I

10

5

-5

10

-4

10

-3

10

-2

10

t, PULSE WIDTH (s)

-1

10

0

10

TA = 25oC

FOR TEMPERATURES

o

ABOVE 25
CURRENT AS FOLLOWS:

1

10

I = I

25

C DERATE PEAK

150 - T

A

125

2

10

3

10

Figure 4. Peak Current Capability

©2003 Fairchild Semiconductor Corporation FDS3572 Rev. A

Typical Characteristics T

= 25°C unless otherwise noted

A

FDS3572

50

If R = 0
tAV = (L)(IAS)/(1.3*RATED BV

If R ≠ 0

= (L/R)ln[(IAS*R)/(1.3*RATED BV

t

AV

10

, AVALANCHE CURRENT (A)

AS

I

STARTING TJ = 150oC

1

0.1

1 10 100

tAV, TIME IN AVALANCHE (ms)

DSS

- VDD)

DSS

- VDD) +1]

STARTING TJ = 25oC

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 5. Unclamped Inductive Switching

Capability

20

VGS = 10V

15

10

VGS = 6V

VGS = 5V

VGS = 4.5V

20

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

= 15V

V

DD

15

TJ = 150oC

10

, DRAIN CURRENT (A)

D

I

TJ = 25oC

5

0

3.0 3.5 4.0 4.5 5.0 5.5

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = -55oC

Figure 6. Transfer Characteristics

20

18

16

VGS = 6V

, DRAIN CURRENT (A)

D

I

5

0

0 0.25 0.5 0.75 1.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

TA = 25oC

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

14

DRAIN TO SOURCE ON RESISTANCE (m Ω)

12

0246810

VGS = 10V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

ID, DRAIN CURRENT (A)

Figure 7. Saturation Characteristics Figure 8. Drain to Source On Resistance vs Drain

Current

2.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160

TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID = 8.9A

Figure 9. Normalized Drain to Source On

Resistance vs Junction Temperature

1.2

1.1

1.0

0.9

0.8

NORMALIZED GATE

THRESHOLD VOLTAGE

0.7

0.6

-80 -40 0 40 80 120 160

TJ, JUNCTION TEMPERATURE (oC)

VGS = VDS, ID = 250µA

Figure 10. Normalized Gate Threshold Voltage vs

Junction Temperature

©2003 Fairchild Semiconductor Corporation FDS3572 Rev. A