Fairchild FDS2734 service manual
tm
FDS2734
N-Channel UItraFET Trench® MOSFET
250V, 3.0A, 117mΩ
FDS2734 Single N-Channel UItraFET Trench
August 2006
Features
Max r
Max r
Fast switching speed
High performance trench technology for extremely
low r
High power and current handling capability
RoHS compliant
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
=117mΩ at V
DS(on)
=126mΩ at V
DS(on)
DS(on)
D
D
D
SO-8
Pin 1
Drain to Source Voltage 250 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Note 1a) 3.0
-Pulsed 50
Single Pulse Avalanche Energy (Note 3) 12.5 mJ
Power dissipation (Note 1a) 2.5
Power dissipation (Note 1b) 1.0
Operating and Storage Junction Temperature Range -55 to 150
GS
GS
D
=10V, ID = 3.0A
= 6V, ID = 2.8A
G
S
S
S
= 25°C unless otherwise noted
A
General Descriptions
This single N-Channel MOSFET is produced using
Fairchild Semiconductor’s advanced UItraFET Trench
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior switching
performance.
Application
DC-DC conversion
5
6
7
8
4
3
2
1
®
®
MOSFET
A
W
o
C
Thermal Characteristics
R
θJA
θJA
R
θJC
Thermal Resistance, Junction- to -Ambient (Note 1a) 50
Thermal Resistance, Junction- to- Ambient (Note 1b) 125
Thermal Resistance, Junction -to- Case (Note 1) 25
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDS2734 FDS2734 SO-8 13’’ 12mm 2500 units
©2006 Fairchild Semiconductor Corporation
FDS2734 Rev. B
o
C/WR
www.fairchildsemi.com1
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
∆ T
I
DSS
I
GSS
DSS
J
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 250 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
I
= 250µA, referenced to 25oC 157 mV/oC
D
V
= 200V,VGS=0 V 1
DS
= 200V, VGS = 0V TJ = 55oC10
V
DS
Gate to Source Leakage Current VGS = ±20V, VDS =0 V ±100 nA
FDS2734 Single N-Channel UItraFET Trench
µA
On Characteristics
V
GS(th)
∆V
GS(th)
∆ T
r
DS(on)
g
FS
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA234V
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance VDS=10V, ID =3.0A, 15.1 S
(Note 2)
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Input Capacitance
Output Capacitance 85 130 pF
Reverse Transfer Capacitance 26 40 pF
Gate Resistance f = 1MHz 0.7 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time
Rise Time 11 19 ns
Turn-Off Delay Time 40 64 ns
Fall Time 11 19 ns
Total Gate Charge
Gate to Source Gate Charge 9 nC
Gate to Drain Charge 8 nC
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Source to Drain Diode Voltage I
Reverse Recovery Time
Reverse Recovery Charge 185 278 nC
I
= 250µA, referenced to 25oC -10.7 mV/
D
V
= 10V, ID = 3.0A, 97 117
GS
= 6V , ID = 2.8A, 101 126
GS
= 10V, ID = 3.0A, TJ = 125oC 205 225
V
GS
= 100V, VGS = 0V,
V
DS
f = 1MHz
1960 2610 pF
23 37 ns
V
= 125V, ID = 3A
DD
V
= 10V, RGS = 6Ω
GS
V
= 125V, V
DS
I
= 3.0A
D
= 3.0A 0.74 1.2 V
SD
I
= 3.0 A, diF/dt = 100A/µs
F
GS
= 10V
32 45 nC
72 108 ns
c
mΩV
®
MOSFET
Notes:
1: R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
θJA
drain pins. R
2: Pulse Test Width <300
3: Starting TJ = 25°C, L = 1mH, IAS = 5A, VDD = 100V, VGS = 10V
FDS2734 Rev. B
is guaranteed by design while R
θJC
a) 50°C/W when
mounted on a 1in
pad of 2 oz copper
µs, Duty Cycle <2%.
is determined by the user’s board design.
θCA
2
b) 125°C/W when
mounted on a minimum
pad of 2 oz copper
Scale 1 : 1 on letter size paper
www.fairchildsemi.com2
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