Fairchild FDS2672 service manual

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FDS2672
N-Channel UltraFET Trench® MOSFET

200V, 3.9A, 70mΩ

Features

General Description

FDS2672 N-Channel UltraFET Trench

August 2006

 Max r

 Max r

 Fast switching speed

 High performance trench technology for extremely low

r

DS(on)

 RoHS compliant

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

= 70mΩ at V

DS(on)

= 80mΩ at V

DS(on)

D

SO-8

Drain to Source Voltage 200 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Note 1a) 3.9

-Pulsed 50

Single Pulse Avalanche Energy (Note 3) 37.5 mJ

Power Dissipation (Note 1a) 2.5

Power Dissipation (Note 1b) 1.0

Operating and Storage Temperature -55 to 150 °C

GS

GS

D

D

Pin 1

= 10V, ID = 3.9A

= 6V, ID = 3.5A

D

S

S

This single N-Channel MOSFET is produced using
Fairchild Semiconductor’s advanced UItraFET Trench
process that has been especially tailored to minimize
the on-state resistance and yet maintain superior switching
performance.

Application

 DC-DC conversion

G

S

= 25°C unless otherwise noted

A

5

6

7

8

4

3

2

1

Thermal Characteristics

®

®

MOSFET

A

W

R

θJC

θJA

R

θJA

Thermal Resistance, Junction to Case (Note 1) 25

Thermal Resistance, Junction to Ambient (Note 1a) 50

Thermal Resistance, Junction to Ambient (Note 1b) 125

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity

FDS2672 FDS2672 13’’ 12mm 2500 units

©2006 Fairchild Semiconductor Corporation
FDS2672 Rev. B

°C/WR

www.fairchildsemi.com1

FDS2672 N-Channel UltraFET Trench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV

DSS

∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

∆V

GS(th)

∆T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 200 V

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current

ID = 250µA, referenced to 25°C 206 mV/°C

V

= 160V, VGS=0V 1 µA

DS

V

= 160V, VGS=0V TJ = 55°C 10 µA

DS

Gate to Source Leakage Current VGS = ±20V ±100 nA

(Note 2)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 2 2.9 4 V

Gate to Source Threshold Voltage
Temperature Coefficient

Drain to Source On Resistance

Forward Transcondductance VDS = 10V,ID = 3.9A 15 S

ID = 250µA, referenced to 25°C -11 mV/°C

VGS = 10V, ID = 3.9A 59 70

VGS = 10V, ID = 3.9A, TJ = 125°C 124 148

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 100 135 pF

Reverse Transfer Capacitance 30 45 pF

VDS = 100V, VGS = 0V,
f = 1MHz

1905 2535 pF

Gate Resistance f = 1MHz 0.7 Ω

mΩVGS = 6V, ID = 3.5A 63 80

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time

Rise Time 10 20 ns

Turn-Off Delay Time 35 56 ns

VDD = 100V, ID = 3.9A
VGS = 10V, R

GEN

= 6Ω

22 35 ns

Fall Time 10 20 ns

Total Gate Charge at 10V

Gate to Source Gate Charge 11 nC

VDD =100V ID = 3.9A

33 46 nC

Gate to Drain “Miller”Charge 7 nC

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:
1: R

θJA

the drain pins. R

Source to Drain Diode Voltage V

= 0V, IS = 3.9A 0.75 1.2 V

GS

Reverse Recovery Time IF = 3.9A, di/dt = 100A/µs 67 101 ns

Reverse Recovery Charge IF = 3.9A, di/dt = 100A/µs 179 269 nC

is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

is guaranteed by design while R

θJC

a) 50°C/W (10 sec)

62.5°C/W steady state
when mounted on a 1in
pad of 2 oz copper

is determined by the user’s board design.

θCA

2

b) 125°C/W when mounted on a
minimum pad .

Scale 1:1 on letter size paper

2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
3: Starting T

FDS2672 Rev. B www.fairchildsemi.com2

= 25°C, L = 3mH, IAS = 5A, VDD = 100V, VGS = 10V

J