Fairchild FDS2670 service manual

FDS2670

200V N-Channel PowerTrench



MOSFET

FDS2670

August 2001

General Description

This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/ DC
converters using either synchronous or conventional
switching PWM controller s .

These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable

specifications.

RDS

(ON)

The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.

D

D

Features

• 3.0 A, 200 V. R

• Low gate charge

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

• High power and current handling capability

5

= 130 mΩ @ VGS = 10 V

DS(ON)

4

D

D

G

S

SO-8

S

S

Absolute Maximum Ratings T

=25oC unless otherwise noted

A

6

7
8

3

2
1

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

dv/dt Peak Diode Recovery dv/dt (Note 3) 3.2 V/ns
TJ, T

STG

Drain-Source Voltage 200 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) 3.0 A

– Pulsed 20

Power Dissipation for Single Operation (Note 1a) 2.5

(Note 1b)
(Note 1c)

Operating and Storage Junction Temperature Range

±20

1.2

1.0

−55 to +150 °C

V

W

Thermal Characteristics

R

θJA

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient (Note 1a) 50
Thermal Resistance, Junction-to-Ambient (Note 1c) 125
Thermal Resistance, Junction-to-Case (Note 1) 25

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

FDS2670 FDS2670 13’’ 12mm 2500 units

2001 Fairchild Semiconductor Corporation

°C/W
°C/W
°C/W

FDS2670 Rev C1(W)

FDS2670

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)

W

DSS

I

AR

Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source Avalanche
Current

VDD = 100 V, ID = 3.0 A 375 mJ

3.0 A

Off Characteristics

BV

DSS

∆BVDSS
∆T

J

I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

= 0 V, ID = 250 µA

V

GS

= 250 µA, Referenced to 25°C

I

D

Zero Gate Voltage Drain Current VDS = 160 V, VGS = 0 V 1
Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA

200 V

214

mV/°C

µA

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
∆T

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain–Source
On–Resistance

V

= VGS, ID = 250 µA

DS

= 250 µA, Referenced to 25°C

I

D

VGS = 10 V, ID = 3.0 A

=10 V, ID =3.0 A, TJ =125°C

V

GS

244.5V
–10

100
205

On–State Drain Current VGS = 10 V, VDS = 10 V 20 A
Forward Transconductance VDS = 10 V, ID = 3.0 A 15 S

130
275

mV/°C

mΩ

Dynamic Characteri stics

C

iss

C

oss

C

rss

Input Capacitance 1228 pF
Output Capacitance 112 pF
Reverse Transfer Capacitance

V

= 100 V, V

DS

f = 1.0 MHz

GS

= 0 V,

17 pF

Switching Characteristics (Note 2)

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

g

gs

gd

Turn–On Delay Time 13 23 ns
Turn–On Rise Time 8 16 ns

V

= 100 V, ID = 1 A,

DD

= 10 V, R

V

GS

GEN

= 6 Ω
Turn–Off Delay Time 30 48 ns
Turn–Off Fall Time
Total Gate Charge 27 43 nC

Gate–Source Charge 7 nC

V

= 100 V, ID = 3 A,

DS

= 10 V

V

GS

Gate–Drain Charge

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Maximum Continuous Drain–Source Diode Forward Current 2.1 A
Drain–Source Diode Forward

Voltage

= 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V

V

GS

25 40 ns

10 nC

FDS2670 Rev C1(W)