Fairchild FDS2582 service manual

FDS2582

N-Channel PowerTrench® MOSFET
150V, 4.1A, 66mΩ

FDS2582

September 2002

Features

•r

•Q

• Low Miller Charge

•Low Q

• Optimized eff iciency at high frequ encies

• UIS Capability (Single Pulse and Repetitive Pulse)

= 57mΩ (Typ.), V

DS(ON)

(tot) = 19nC (Typ.), V

g

Body Diode

RR

= 10V, ID = 4.1A

GS

= 10V

GS

Applications

• DC/DC converters and Off-Line UPS

• Distributed Power Architectures and VRMs

• PrimarySwitch for 24V and 48V Systems

• High Voltage Synchronous R ectifier

• Direct Injection / Diesel Injection Systems

• 42V Automotive Load Control

Formerly developmental type 82855

Branding Dash

1

2

3

4

5

• Electronic Valve Train Systems

5
6
7
8

SO-8

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 150 V
Gate to Source Voltage ±20 V
Drain Curr e nt
Continuous (T
Continuous (T

= 25oC, VGS = 10V, R

A

= 100oC, VGS = 10V, R

A

Pulsed Figure 4 A
Single Pulse Avalanche Energy (Note 1) 252 mJ
Power dissipation 2.5 W
Derate above 25

o

C20mW/

Operating and Storage Temperature -55 to 150

= 25°C unless otherwise noted

A

= 50oC/W)

θJA

= 50oC/W) 2.6 A

θJA

4.1 A

4
3
2
1

o

C

o

C

Thermal Characteristi cs

R

θJA

R

θJA

R

θJC

ThermalResistance,Junction to Ambientat 10 seconds (Note 3) 50
ThermalResistance,Junction to Ambientat 1000 seconds (Note 3) 80
ThermalResistance,Junctionto Case (Note 2) 25

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDS258 2 FDS2582 SO-8 330mm 12mm 2500 un its

©2002 Fairchild Semiconductor Corporation

o

C/W

o

C/W

o

C/W

FDS2582 Rev. B

FDS2582

Electrical Characteristics T

= 25°C unl ess otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B
I

DSS

I

GSS

VDSS

Drain t o Source Breakdown Volta ge ID = 250µA, VGS = 0V 150 - - V

V

= 120V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC- - 250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA2-4V

Drain to Source On Resistance

= 4.1A, V

I

D

I

= 2A, VGS = 6V - 0.065 0.098

D

I

= 4.1A, V

D

T

= 150oC

C

= 10V - 0.057 0.066

GS

= 10V,

GS

- 0.125 0.146

Dynamic Characteristics

C
C
C
Q
Q
Q
Q
Q

ISS
OSS
RSS

g(TOT)
g(TH)
gs
gs2
gd

Input Capacitance
Output Capacitance - 150 - pF
Reverse Transfer Capacitance - 32 - pF

= 25V, VGS = 0V,

V

DS

f = 1MHz

Total G ate Ch arg e at 10 V VGS = 0V to 10V
Threshold Gate Charge VGS = 0V to 2V - 2.3 3.0 nC
Gate to Source Gate Charge - 5.4 - nC
Gate Charge Threshold to Plateau - 3.1 - nC

V

DD

I

= 4.1A

D

I

= 1.0m A

g

= 75V

Gate to Drain “Miller” Charge - 4.4 - nC

-1290- pF

-1925nC

µA

Ω

Resistive Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time
Turn-On Delay Time - 11 - ns
Rise Time - 19 - ns
T u rn-Off Delay Time - 36 - ns
Fall Time - 26 - ns
Turn-Off Time - - 92 ns

(VGS = 10V)

V

DD

V

GS

--45ns

= 75V, ID = 4.1A
= 10V, RGS = 16Ω

Drain-Source Diode Characteristics

I

= 4.1A - - 1.25 V

V

SD

t

rr

Q

RR

Notes:
1: Starting T
2: R

θJA

drain pins. R

3: R

θJA

Source to Drain Di ode Voltage
Reverse Recovery Time ISD= 4.1A, dISD/dt= 100A/µs- - 63ns

Reverse Recovered Charge ISD= 4.1A, dISD/dt= 100A/µs - - 116 nC

= 25°C, L = 56mH, IAS = 3A.

J

is the sum of the junction-to-case and cas e-to-a mbient thermal r esistance wher e the case thermal referance is defined as the solder mounting su rface of the
is measured with 1.0 in2 copper on FR-4 board

is guaranteed by design while R

θJC

is determined by the user’s board design.

θCA

SD

I

= 2A - - 1.0 V

SD

©2002 Fairchild Semiconductor Corporation FDS2582 Rev . B

FDS2582

Typical Characteristics T

= 25°C unl ess otherwise noted

A

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0

0 25 50 75 100 150

TA, AMBIENT TEMPERATURE (oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

1

0.5

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

0.01

θJA

Z

THERMAL IMPEDANCE

0.001

-5

10

SINGLE PULSE

-4

10

-3

10

5

4

3

2

, DRAIN CURRENT (A)

D

I

1

0

125

25 50 75 100 125 150

Figure 2. Maximum Continuous Drain Curr ent vs

-2

10

t, RECTANGULAR PULSE DURATION (s)

-1

10

10

TC, CASE TEMPERATURE (oC)

Case Temperature

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

0

1

10

V

= 10V

GS

R

=50oC/W

θJA

P

DM

t

1

t

2

1/t2

x R

+ T

θJA

θJA

A

2

10

3

10

Figure 3. Normalized Maximum Transient Thermal Impedance

400

100

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

10

, PEAK CURRENT (A)

DM

I

VGS = 10V

1

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

t, PULSE WIDTH (s)

TA = 25oC
FOR TEMPERATURES

o

ABOVE 25

C DERATE PEAK

CURRENT AS FOLLOWS:

150 - T

I = I

25

1

10

10

125

2

C

3

10

Figure 4. Peak Current Capability

©2002 Fairchild Semiconductor Corporation FDS2582 Rev . B

Typical Characteristics T

= 25°C unl ess otherwise noted

A

FDS2582

100

10

1

OPERATION IN THIS

AREA MAY BE

LIMITED BY r

, DRAIN CURRENT (A)

D

I

0.1
SINGLE PULSE

TJ = MAX RATED
T

= 25oC

C

0.01

0.1 1 10 100

DS(ON)

VDS, DRAIN TO SOURCE VOLTAGE (V)

10µs

100µs

1ms
10ms

100ms

1s

Figure 5. Forward Bias Safe Operating Area

30

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V

= 15V

DD

25

20

15

TJ = 25oC

10

, DRAIN CURRENT (A)

D

I

5

0

3.5 4.0 4.5 5.0 5.5 6.0

TJ = 150oC

TJ = -55oC

VGS, GATE TO SOURCE VOLTAGE (V)

7

STARTING TJ = 25oC

1

STARTING TJ = 150oC

, AVALANCHE CURRENT (A)

AS

I

If R = 0

400

tAV = (L)(IAS)/(1.3*RATED BV
If R ≠ 0

t

= (L/R)ln[(IAS*R)/(1.3*RATED BV

AV

0.1

0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE (ms)

DSS

- VDD)

DSS

- VDD) +1]

NOTE: Refer to Fairchild Application Notes AN7514 and AN7515

Figure 6. Unclamped Inductive Switching

Capability

30

TA = 25oC

25

20

15

10

, DRAIN CURRENT (A)

D

I

5

0

0 0.5 1.0 1.5 2.0

VDS, DRAIN TO SOURCE VOLTAGE (V)

VGS = 10V

VGS = 6V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

VGS = 7V

VGS = 5V

Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics

66

VGS = 6V

64

62

PULSE DURATION = 80µs

60

58

VGS = 10V

56

DRAIN TO SOURCE ON RESISTANCE (m Ω)

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

DUTY CYCLE = 0.5% MAX

I

, DRAIN CURRENT (A)

D

Figure 9. Drain to So urce On Resistanc e v s Drai n

Current

©2002 Fairchild Semiconductor Corporation FDS2582 Rev . B

2.5

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

2.0

1.5

ON RESISTANCE

1.0

NORMALIZED DRAIN TO SOURCE

0.5

-80 -40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)

VGS = 10V, ID = 4.1A

Figure 10. Normalized Drain to Source On

Resistance vs Junction Temperature