Fairchild FDQ7236AS service manual
January 2011
FDQ7236AS
Dual Notebook Power Supply N-Channel PowerTrench® in SO-14 Package
FDQ7236AS
General Description
The FDQ7236AS is designed to replace two single SO8 MOSFETs in DC to DC power supplies. The high-side
switch (Q1) is designed with specific emphasis on
reducing switching losses while the low-side switch
(Q2) is optimized to reduce conduction losses using
Fairchild’s SyncFET
includes a patented combination of a MOSFET
monolithically integrated with a Schottky diode.
TM
technology. The FDQ7236AS
S2
S2
S2
G2
Vin
G1
= 25°C unless otherwise noted
A
SO-14
pin 1
Absolute Maximum Ratings T
Features
• Q2: 14 A, 30V. R
R
• Q1: 11 A, 30V. R
R
= 8.7 mΩ @ VGS = 10V
DS(on)
= 10.5 mΩ @ VGS = 4.5V
DS(on)
= 13.2 mΩ @ VGS = 10V
DS(on)
= 16 mΩ @ VGS = 4.5V
DS(on)
Symbol Parameter Q2 Q1 Units
V
Drain-Source Voltage 30 30 V
DSS
V
Gate-Source Voltage
GSS
- Pulsed
TJ, T
Operating and Storage Junction Temperature Range
STG
(Note 1c & 1d)
±20 ±20
14 11 ID Drain Current - Continuous (Note 1a)
50 50
2.4 1.8 PD Power Dissipation for Single Operation (Note 1a & 1b)
1.3 1.1
−55 to +150 °C
V
A
W
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient (Note 1a & 1b) 52 68
(Note 1c & 1d)
94 118
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
FDQ7236AS FDQ7236AS 13” 16mm 2500 units
©2011 Fairchild Semiconductor Corporation
FDQ7236AS Rev C
FDQ7236AS
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Type Min Typ Max Units
Off Characteristics
BV
Drain-Source Breakdown
DSS
Voltage
∆BVDSS
∆T
I
DSS
I
GSS
Breakdown Voltage
Temperature Coefficient
J
Zero Gate Voltage Drain Current
Gate-Body Leakage
VGS = 0 V, ID = 1 mA
V
= 0 V, ID = 250 µA
GS
I
= 10 mA, Referenced to 25°C
D
= 250 µA, Referenced to 25°C
I
D
Q2
Q1
Q2
Q1
VDS = 24 V, VGS = 0 V Q2
Q1
= 24 V, VGS = 0 V,
V
DS
= 125°C
T
J
V
= ±20 V, VDS = 0 V
GS
Q2
Q1
ALL
30
V
30
25
24
5.6
40
500
1
±100
mV/°C
On Characteristics (Note 2)
V
Gate Threshold Voltage VDS = VGS, ID = 1 mA
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
I
On–State Drain Current VGS = 10 V, VDS = 5 V
D(on)
= VGS, ID = 250 µA
V
DS
I
= 10 mA, Referenced to 25°C
D
= 250 µA, Referenced to 25°C
I
D
VGS = 10 V, ID = 14 A
V
= 4.5 V, ID = 13 A
GS
V
= 10 V, ID = 14A, TJ = 125°C
GS
V
= 10 V, ID = 11 A
GS
V
= 4.5 V, ID = 10 A
GS
= 10 V, ID = 11, TJ = 125°C
V
GS
V
= 10 V, VDS = 5 V
GS
gFS Forward Transconductance VDS = 10 V, ID = 14 A
= 10 V, ID = 11 A
V
DS
Q2
Q1 1 1
Q2
Q1
Q2
Q1 11
Q2
Q1
Q2
Q1
1.8
1.7 3 3
−3
−4
7.2
8.7
10
13
15
50
A
50
58
43
mV/°C
8.7
10.5
12.5
13.2
16
19
S
Dynamic Characteristics
C
Input Capacitance Q2
iss
C
Output Capacitance Q2
oss
C
Reverse Transfer Capacitance
rss
V
= 15 V, VGS = 0 V,
DS
f = 1.0 MHz
Rg Gate Resistance VGS = 15mV, f = 1.0 MHz Q2
Q1
Q1
Q2
Q1
Q1
1530
920
440
190
160
120
1.9
1.9
pF
pF
pF
µA
mA
µA
nA
V
mΩ
Ω
FDQ7236AS Rev C
FDQ7236AS
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Type Min Typ Max Units
Switching Characteristics (Note 2)
t
Turn-On Delay Time
d(on)
tr Turn-On Rise Time
t
Turn-Off Delay Time
d(off)
tf Turn-Off Fall Time
t
Turn-On Delay Time
d(on)
tr Turn-On Rise Time
t
Turn-Off Delay Time
d(off)
tf Turn-Off Fall Time
Q
Total Gate Charge, VGS = 10V
g(TOT)
Q
Total Gate Charge, VGS = 5V
g(TOT)
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
V
= 15 V, ID = 1 A,
DD
V
= 10V, R
GS
= 15 V, ID = 1 A,
V
DD
= 4.5V, R
V
GS
Q2
V
= 15 V, ID = 14A
DS
Q1
V
= 15 V, ID = 11A
DS
GEN
GEN
= 6 Ω
= 6 Ω
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
12 9 21
18
13 5 23
10
30
27
49
43
19 4 35
8
17
18
28
11
15
16
30
20
32
26
44
29
13 9 23
18
28
17
39
24
15 9 21
19
4.1
2.7
4.9
3.3
ns
ns
ns
ns
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current Q2
Q1
VSD Drain-Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time 22 ns
Qrr Diode Reverse Recovery Charge
t
rr
Diode Reverse Recovery Time 16 ns
Qrr Diode Reverse Recovery Charge
NOTE :
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
θJA
surface of the drain pins. R
is guaranteed by design while R
θJC
VGS = 0 V, IS = 3.4 A (Note 2)
VGS = 0 V, IS = 1.9 A (Note 2)
= 0 V, IS = 2.1 A (Note 2)
V
GS
I
= 14A
F
dI
/dt = 300 A/µs
F
= 11A
I
F
/dt = 100 A/µs
dI
F
is determined by the user's board design.
θCA
Q2
Q1
Q2
Q1
3.4
0.5
0.4
0.7
15 nC
5 nC
2.1
0.7
1.2
A
V
a) 68°C/W when
mounted on a 1in2 pad
of 2 oz copper (Q1).
b) 52°C/W when
mounted on a 1in
of 2 oz copper (Q2).
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3
4
2
pad
c) 118°C/W when mounted
on a minimum pad of 2 oz
copper (Q1).
d) 94°C/W when mounted on
a minimum pad of 2 oz
copper (Q2).
FDQ7236AS Rev C
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