Fairchild FDPF680N10T service manual

FDPF680N10T

N-Channel PowerTrench® MOSFET

100V, 12A, 68mΩ

FDPF680N10T N-Channel PowerTrench

November 2008

Features

•R

• Fast Switching Speed

• Low Gate Charge

• High Performance Trench Technology for Extremely Low

• High Power and Current Handling Capability

• RoHS Compliant

Application

• DC to AC Converters / Synchronous Rectification

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt (Note 3) 13.0 V/ns

P

D

, T

T

J

T

L

= 54mΩ ( Typ.)@ VGS = 10V, ID = 6A

DS(on)

R

DS(on)

D

G

S

Symbol Parameter Ratings Units

Drain to Source Voltage 100 V

Gate to Source Voltage ±20 V

Drain Current

Drain Current - Pulsed (Note 1) 48 A

Single Pulsed Avalanche Energy (Note 2) 50.4 mJ

Power Dissipation

STG

Operating and Storage Temperature Range -55 to +150 Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

TO-220F

= 25oC unless otherwise noted*

C

-Continuous (T

(T

= 25oC) 24 W

C

- Derate above 25

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

D

G

S

= 25oC) 12

C

= 100oC) 7.6

C

o

C0.19W/

300

o

®

MOSFET

A

o

C

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

R

θJA

Thermal Resistance, Junction to Case 5.2

Thermal Resistance, Junction to Ambient 62.5

o

C/W

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDPF680N10T FDPF680N10T TO-220F - - 50

FDPF680N10T N-Channel PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV ΔBV

ΔT

I

DSS

I

GSS

DSS

J

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TC = 25oC 100 - - V Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate to Body Leakage Current VGS = ±20V, V

I

= 250μA, Referenced to 25oC-0.1-V/

D

V

= 100V, V

DS

= 100V, V

V

DS

= 0V - - 1

GS

= 0V, TC = 150oC - - 500

GS

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250μA2.53.54.5V

Static Drain to Source On Resistance VGS = 10V, ID = 6A - 54 68 mΩ

Forward Transconductance VDS = 10V, ID = 12A (Note 4) -26-S

Dynamic Characteristics

C

Q

iss

oss

rss

g(tot)

gs

gd

Input Capacitance

Output Capacitance - 60 80 pF

Reverse Transfer Capacitance - 25 40 pF

Total Gate Charge

Gate to Source Gate Charge - 4 - nC

Gate to Drain “Miller” Charge - 4 - nC

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

Turn-On Rise Time - 19 48 ns

Turn-Off Delay Time - 18 46 ns

Turn-Off Fall Time - 6 22 ns

= 50V, VGS = 0V

V

DS

f = 1MHz

V

= 80V, ID = 12A

DS

V

= 10V

GS

( Note 4 , 5)

= 50V, ID = 12A

V

DD

V

= 10V, R

GS

( Note 4 , 5)

GEN

= 10Ω

- 750 1000 pF

-1317nC

-1336ns

μA

o

C

®

MOSFET

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 0.7mH, I

≤ 12A, di/dt ≤ 200A/μs, VDD ≤ BV

3. I

SD

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

FDPF680N10T Rev. A

Maximum Continuous Drain to Source Diode Forward Current - - 12 A

Maximum Pulsed Drain to Source Diode Forward Current - - 48 A

Drain to Source Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge - 35 - nC

= 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/μs (Note 4)

F

= 12A - - 1.3 V

SD

= 12A

SD

2

-29-ns

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Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

60

V

=

15.0 V

GS

10.0 V

8.0 V

7.0 V

10

6.5 V

6.0 V

5.5 V

1

,Drain Current[A]

D

I

*Notes:

μ

s Pulse Test

1. 250

= 25oC

2. T

0.1

0.01 0.1 1 10

C

VDS,Drain-Source Voltage[V]

60

150oC

10

25oC

,Drain Current[A]

D

I

1

45678

-55oC

*Notes:

1. V

2. 250

VGS,Gate-Source Voltage[V]

= 20V

DS

μ

s Pulse Test

FDPF680N10T N-Channel PowerTrench

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

0.20

0.15

,

[Ω]

0.10

DS(ON)

R

VGS = 10V

VGS = 20V

0.05

Drain-Source On-Resistance

0

0 102030405060

*Note: TC = 25oC

ID, Drain Current [A]

200

100

150oC

10

25oC

1

, Reverse Drain Current [A]

S

I

0.1

0.0 0.5 1.0 1.5

*Notes:

1. VGS = 0V

2. 250

μ

s Pulse Test

VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

5000

1000

C

= Cgs + Cgd (Cds = shorted)

iss

= Cds + C

C

oss

C

rss

iss

= C

gd

10

VDS = 25V

= 50V

V

8

DS

= 80V

V

DS

®

MOSFET

100

Capacitances [pF]

10

0.01 0.1 1 10 50

FDPF680N10T Rev. A

C

oss

C

rss

*Note:

1. V

= 0V

GS

2. f = 1MHz

VDS, Drain-Source Voltage [V]

6

4

, Gate-Source Voltage [V]

GS

V

2

0

03691215

*Note: ID = 12A

Qg, Total Gate Charge [nC]

3

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