Fairchild FDP5N50U, FDPF5N50UT service manual
tm
FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET
D
G
S
TO-220
FDP Series
G D S
TO-220F
FDPF Series
(potted)
G
S
D
FDP5N50U / FDPF5N50UT
Ultra FRFET
N-Channel MOSFET, FRFET
500V, 4A, 2.0Ω
Features
•R
• Low gate charge ( Typ. 11nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
= 1.65Ω ( Typ.)@ VGS = 10V, ID = 2A
DS(on)
( Typ. 5pF)
rss
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DOMS technology.
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutationmode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
May2012
TM
MOSFET Maximum Ratings T
Symbol Parameter FDP5N50U FDPF5N50UT Units
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns
P
D
, T
T
J
STG
T
L
*Drain current limited by maximum junction temperature
Drain to Source Voltage 500 V
Gate to Source Voltage ±30 V
Drain Current
Drain Current - Pulsed (Note 1) 16 16* A
Single Pulsed Avalanche Energy (Note 2) 216 mJ
Avalanche Current (Note 1) 4 A
Repetitive Avalanche Energy (Note 1) 8.5 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
= 25oC unless otherwise noted*
C
-Continuous (T
-Continuous (T
(T
= 25oC) 85 28 W
C
- Derate above 25
= 25oC) 4 4*
C
= 100oC) 2.4 2.4*
C
o
C0.670.22W/
300
o
o
Thermal Characteristics
Symbol Parameter FDP5N50U FDPF5N50UT Units
R
θJC
θCS
R
θJA
Thermal Resistance, Junction to Case 1.4 4.5
Thermal Resistance, Case to Sink Typ. 0.5 -
Thermal Resistance, Junction to Ambient 62.5 62.5
o
C/WR
A
o
C
C
C
©2012 Fairchild Semiconductor Corporation
FDP5N50U / FDPF5N50UT Rev.C1
www.fairchildsemi.com1
FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET
Package Marking and Ordering Information T
= 25oC unless otherwise noted
C
Device Marking Device Package Reel Size Tape Width Quantity
FDP5N50U FDP5N50U TO-220 - - 50
FDPF5N50UT FDPF5N50UT TO-220F - - 50
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
ΔBV
DSS
ΔT
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g(tot)
Q
gs
Q
gd
Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 500 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
I
= 250μA, Referenced to 25oC-0.7-V/
D
V
= 500V, V
DS
= 400V, TC = 125oC - - 250
V
DS
= 0V - - 25
GS
= 0V - - ±100 nA
DS
Gate Threshold Voltage VGS = VDS, ID = 250μA3-5V
Static Drain to Source On Resistance VGS = 10V, ID = 2A - 1.65 2 Ω
Forward Transconductance VDS = 40V, ID = 2A (Note 4) -4.8-S
Input Capacitance
Output Capacitance - 65 90 pF
Reverse Transfer Capacitance - 5 8 pF
= 25V, VGS = 0V
V
DS
f = 1MHz
Total Gate Charge at 10V
V
= 400V, ID = 4A
Gate to Source Gate Charge - 3 - nC
Gate to Drain “Miller” Charge - 5 - nC
DS
V
= 10V
GS
( Note 4 , 5)
- 485 650 pF
-1115nC
μA
o
C
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 21 52 ns
Turn-Off Delay Time - 27 64 ns
Turn-Off Fall Time - 20 50 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 27mH, IAS = 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3: ISD ≤ 4A, di/dt ≤ 200A/μs, VDD ≤ BV
4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 4 A
Maximum Pulsed Drain to Source Diode Forward Current - - 16 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 33 - nC
, Starting TJ = 25°C
DSS
= 250V, ID = 4A
V
DD
R
= 25Ω
G
(N ote 4, 5)
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/μs (Note 4)
F
= 4A - - 1.6 V
SD
= 4A
SD
-1438ns
-36-ns
FDP5N50U / FDPF5N50UT Rev.C1
2
www.fairchildsemi.com
Typical Performance Characteristics
45678
0.1
1
10
150oC
*Notes:
1. V
DS
= 20V
2. 250
μs Pulse Test
25oC
I
D
,Drain Current[A]
VGS,Gate-Source Voltage[V]
0.1 1 10
0.1
1
10
30
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25oC
V
GS
= 15.0V
10.0V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
I
D
,Drain Current[A]
VDS,Drain-Source Voltage[V]
0.02
0 6 12 18
1.4
1.8
2.2
2.6
*Note: TJ = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.4 1.0 1.6 2.2
1
10
*Notes:
1. VGS = 0V
2. 250
μs Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
30
0.1 1 10
0
200
400
600
800
1000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
30
04812
0
2
4
6
8
10
*Note: ID = 4A
VDS = 100V
V
DS
= 250V
V
DS
= 400V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDP5N50U / FDPF5N50UT N-Channel MOSFET, FRFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDP5N50U / FDPF5N50UT Rev.C1
3
www.fairchildsemi.com
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