Fairchild FDP5N50NZU, FDPF5N50NZU service manual

February 2012

G

S

D

G

S

D

TO-220
FDP Series

G D S

TO-220F
FDPF Series
(potted)

G

S

D

UniFET-II

FDP5N50NZU / FDPF5N50NZU

N-Channel MOSFET

500V, 3.9A, 2.0Ω

FDP5N50NZU / FDPF5N50NZU N-Channel MOSFET

TM

Features

•R

• Low Gate Charge ( Typ. 9nC)

•Low C

• Fast Switching

• 100% Avalanche Tested

• Improved dv/dt Capability

• ESD Imoroved Capability

•RoHS Compliant

= 1.7Ω ( Typ.)@ VGS = 10V, ID = 1.95A

DS(on)

( Typ. 4pF)

rss

Description

These N-Channel enhancement mode power field effect transis­tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.

This advance technology has been especially tailored to mini­mize on-state resistance, provide superior switching perfor­mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi­cient switching mode power supplies and active power factor
correction.

MOSFET Maximum Ratings T

Symbol Parameter FDP5N50NZU FDPF5N50NZU Units

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns
P

D

, T

T

J

STG

T

L

*Drain current limited by maximum junction temperature

Drain to Source Voltage 500 V
Gate to Source Voltage ±25 V

Drain Current
Drain Current - Pulsed (Note 1) 15 15* A

Single Pulsed Avalanche Energy (Note 2) 135 mJ
Avalanche Current ( Note 1) 3.9 A
Repetitive Avalanche Energy (Note 1) 7.8 mJ

Power Dissipation
Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

o

= 25

C unless otherwise noted*

C

-Continuous (T

-Continuous (T

(T

= 25oC) 78 30 W

C

- Derate above 25

= 25oC) 3.9 3.9*

C

= 100oC) 2.3 2.3*

C

o

C 0.62 0.24 W/oC

300

A

o

C

o

C

Thermal Characteristics

Symbol Parameter

R

θJC
θCS

R

θJA

©2012 Fairchild Semiconductor Corporation
FDP5N50NZU / FDPF5N50NZU Rev. C0

Thermal Resistance, Junction to Case 1.6 4.1
Thermal Resistance, Case to Heat Sink Typ. 0.5 ­Thermal Resistance, Junction to Ambient 62.5 62.5

FDP5N50NZU FDPF5N50NZU

Units

o

C/WR

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Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP5N50NZU FDP5N50NZU TO-220 - - 50

FDPF5N50NZU FDPF5N50NZU TO-220F - - 50

FDP5N50NZU / FDPF5N50NZU N-Channel MOSFET

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
ΔBV

ΔT
I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TC = 25oC 500 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±25V, V

I

= 250μA, Referenced to 25oC-0.5-V/

D

V

= 500V, V

DS

= 400V, V

V

DS

= 0V - - 25

GS

= 0V,TC = 125oC- - 250

GS

= 0V - - ±10 μA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 1.95A - 1.7 2.0 Ω

= 20V, ID = 1.95A (Note 4)

Forward Transconductance

V

DS

-4.2-S

Dynamic Characteristics

C
C
C
Q
Q

Q

iss
oss
rss

g(tot)
gs

gd

Input Capacitance
Output Capacitance - 50 65 pF
Reverse Transfer Capacitance - 4 8 pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 2 - nC

Gate to Drain “Miller” Charge - 4 - nC

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time
Turn-On Rise Time - 19 50 ns
Turn-Off Delay Time - 31 70 ns
Turn-Off Fall Time - 22 55 ns

= 25V, VGS = 0V

V

DS

f = 1MHz

V

= 400V ID = 3.9A

DS

V

= 10V

GS

(Note 4)

= 250V, ID = 3.9A

V

DD

V

= 10V, R

GS

(Note 4)

GEN

= 25Ω

- 365 485 pF

- 9 12 nC

-1235ns

μA

o

C

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 18mH, IAS = 3.9A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 3.9A, di/dt ≤ 200A/μs, VDD ≤ BV

4. Essentially Independent of Operating Temperature Typical Characteristics

FDP5N50NZU / FDPF5N50NZU Rev. C0

Maximum Continuous Drain to Source Diode Forward Current - - 3.9 A
Maximum Pulsed Drain to Source Diode Forward Current - - 15 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 33 - nC

, Starting TJ = 25°C

DSS

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/μs (Note 4)

F

= 3.9A - - 1.6 V

SD

= 3.9A

SD

2

-45-ns

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Typical Performance Characteristics

0.1 1 10

0.03

0.1

1

10

*Notes:

1. 250

μs Pulse Test

2. T

C

= 25oC

V

GS

= 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

5.0 V

I

D

, Drain Current[A]

VDS, Drain-So u rc e Voltage[V]

25

345678

0.1

1

10

-55oC

150oC

*Notes:

1. V

DS

= 20V

2. 250

μs Pulse Test

25oC

I

D

, Drain Current[A]

VGS, Gate-Source Voltage[V]

0.4 0.8 1.2 1.6

1

10

50

*Notes:

1. VGS = 0V

2. 250

μs Pulse Test

150oC

I

S

, Reverse Drain Current [A]

VSD, Body Diode Forward Voltage [V]

25oC

0246810

1.2

1.6

2.0

2.4

2.8

3.2

3.6

*Note: TC = 25oC

VGS = 20V

VGS = 10V

R

DS(ON)

[Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0246810

0

2

4

6

8

10

*Note: ID = 3.9A

VDS = 100V
V

DS

= 250V

V

DS

= 400V

V

GS

, Gate-Source Voltage [V]

Qg, Total Gate Charge [nC]

0.1 1 10 30

0

200

400

600

800

C

oss

C

iss

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

*Note:

1. V

GS

= 0V

2. f = 1MHz

C

rss

Capacitances [pF]

VDS, Drain-Source Voltage [V ]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

FDP5N50NZU / FDPF5N50NZU N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDP5N50NZU / FDPF5N50NZU Rev. C0

3

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