Fairchild FDP55N06, FDPF55N06 service manual
FDP55N06/FDPF55N06
60V N-Channel MOSFET
FDP55N06/FDPF55N06 60V N-Channel MOSFET
TM
UniFET
Features
• 55A, 60V, R
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 60 pF)
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings T
Symbol Parameter FDP55N06 FDPF55N06 Units
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt
P
D
T
, T
J
STG
T
L
* Drain current limited by maximum junction temperature
= 0.022 Ω @VGS = 10 V
DS(on)
G
D
S
Drain-Source Voltage 60 V
Drain Current
Drain Current - Pulsed
Gate-Source Voltage ± 25 V
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25°C)
Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
1/8∀ from case for 5 seconds
TO-220
FDP Series
= 25°C unless otherwise noted
C
- Continuous (T
- Continuous (T
- Derate above 25°C 0.9 0.4 W/°C
= 25°C)
C
= 100°C)
C
D
G
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies, active power factor
correction, electronic lamp ballast based on half bridge
topology.
D
G
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TO-220F
FDPF Series
S
55 55 * A
34.8 34.8 * A
220 220 * A
480 mJ
55 A
11. 4 mJ
4.5 V/ns
114 48 W
300 °C
Thermal Characteristics
Symbol Parameter FDP55N06 FDPF55N06 Units
R
θJC
R
θJS
R
θJA
©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDP55N06/FDPF55N06 Rev. A
Thermal Resistance, Junction-to-Case 1.1 2.58 °C/W
Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Widt h Quantity
FDP55N06 FDP55N06 TO-220 50
FDPF55N06 FDPF55N06 TO-220F 50
FDP55N06/FDPF55N06 60V N-Channel MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BV
∆T
J
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.6mH, IAS = 55A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 55A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 -- -- V
/
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.05 -- V/°C
DSS
Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V -- -- 1 µA
VDS = 48 V, TC = 150°C -- -- 10 µA
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V
Static Drain-Source
VGS = 10 V, ID = 27.5 A -- 0.018 0.022 Ω
On-Resistance
Forward Transconductance VDS = 25 V, ID = 27.5 A (Note 4) -- 33 -- S
Input Capacitance VDS = 25 V, VGS = 0 V,
Output Capacitance -- 375 490 pF
Reverse Transfer Capacitance -- 60 90 pF
f = 1.0 MHz
Turn-O n Delay Time VDD = 30 V, ID = 55 A,
Turn-O n Ris e Ti me --
RG = 25 Ω
Turn-O ff Delay Time --
Turn-O ff Fall Time --
(Note 4, 5)
Total Gate Charge VDS = 48 V, ID = 55A,
Gate-Source Charge --
Gate-Drain Charge --
VGS = 10 V
(Note 4, 5)
-- 1160 1510 pF
--
30 65
130 265
70 150
95 195
--
30 37
6.5
7.5
Maximum Continuous Drain-Source Diode Forward Current -- -- 55 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 220 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 55 A -- -- 1.4 V
Reverse Recovery Time VGS = 0 V, IS = 55 A,
Reverse Recovery Charge -- 55 -- µC
Starting TJ = 25°C
DSS,
dIF / dt = 100 A/µs (Note 4)
-- 40 -- ns
ns
ns
ns
ns
nC
-- nC
-- nC
FDP55N06/FDPF55N06 Rev. A
2 www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
FDP55N06/FDPF55N06 60V N-Channel MOSFET
10
10
, Drain Current [A]
D
I
10
V
Top : 15.0 V
2
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
1
0
-1
10
GS
0
10
VDS, Drain-Sour ce Voltage [ V]
2
10
150oC
* Notes :
1. 250
2. T
µs Pulse Test
= 25oC
C
10
1
1
10
25oC
, Drain Current [A]
D
I
0
10
246810
VGS, Gate-Source Voltage [V]
-55oC
* Notes :
= 30V
1. V
DS
µs Pulse Test
2. 250
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
25oC
* Notes :
1. V
= 0V
GS
µs Pulse Test
2. 250
0.05
0.04
[O ],
0.03
DS(ON)
R
Drain-Source On-Resistance
0.02
VGS = 10V
0 25 50 75 100 125 150 175 200
ID, Drain Current [ A]
VGS = 20V
* Note : TJ = 25oC
2
10
1
10
, Reverse Drain Current [A]
DR
I
0
10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
150oC
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
2500
2000
1500
1000
Capacitances [pF]
500
0
-1
10
FDP55N06/FDPF55N06 Rev. A
C
oss
C
iss
C
rss
VDS, Drain-Source Voltage [V]
C
= Cgs + Cgd (Cds = shorted)
iss
= Cds + C
C
oss
gd
C
= C
rss
gd
* Note :
1. V
= 0 V
GS
2. f = 1 MHz
0
10
1
10
12
10
8
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 5 10 15 20 25 30
VDS = 30V
VDS = 48V
* Note : ID = 55A
QG, Total Gate Charge [nC]
3 www.fairchildsemi.com
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