Fairchild FDP52N20, FDPF52N20T service manual

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FDP52N20 / FDPF52N20T N-Channel MOSFET

FDP52N20 / FDPF52N20T

N-Channel MOSFET

200V, 52A, 0.049Ω
Features

•R

• Low gate charge ( Typ. 49nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improve dv/dt capability

• RoHS compliant

= 0.041Ω ( Typ.)@ VGS = 10V, ID = 26A

DS(on)

( Typ. 66pF)

rss

Description

These N-Channel enhancement mode power field effect transis­tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.

This advance technology has been especially tailored to mini­mize on-state resistance, provide superior switching perfor­mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi­cient switching mode power supplies and active power factor
correction.

October 2007

TM

UniFET

D

G

G

S

D

MOSFET Maximum Ratings T

Symbol Parameter FDP52N20 FDPF52N20T Units

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P

D

, T

T

J

STG

T

L

*Drain current limited by maximum junction temperature

Drain to Source Voltage 200 V
Gate to Source Voltage ±30 V

D r a i n C urrent
Drain Current - Pulsed (Note 1) 208 208* A

Single Pulsed Avalanche Energy (Note 2) 2520 mJ
Avalanche Current (Note 1) 52 A
Repetitive Avalanche Energy (Note 1) 35.7 mJ

Power Dissipation
Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

TO-220
FDP Series

D

G

S

= 25oC unless otherwise noted

C

-Continuous (T

-Continuous (T

(T

= 25oC) 357 38.5 W

C

- Derate above 25

TO-220F
FDPF Series

= 25oC) 52 52*

C

= 100oC) 33 33*

C

o

C 2.86 0.3 W/oC

S

300

o

o

Thermal Characteristics

Symbol Parameter FDP52N20 FDPF52N20T Units

R

θJC
θCS

R

θJA

Thermal Resistance, Junction to Case 0.35 3.3
Thermal Resistance, Case to Sink Typ. 0.5 ­Thermal Resistance, Junction to Ambient 62.5 62.5

o

C/WR

A

C
C

©2007 Fairchild Semiconductor Corporation
FDP52N20 / FDPF52N20T Rev. A

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FDP52N20 / FDPF52N20T N-Channel MOSFET

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FDP52N20 FDP52N20 TO-220 - - 50

FDPF52N20T FDPF52N20T TO-220F - - 50

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g(tot)

Q

gs

Q

gd

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TJ = 25oC 200 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V

I

= 250µA, Referenced to 25oC-0.2-V/

D

V

= 200V, V

DS

= 160V, TC = 125oC--10

V

DS

= 0V - - 1

GS

= 0V - - ±100 nA

DS

Gate Threshold Voltage VGS = VDS, ID = 250µA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 26A - 0.041 0.049 Ω
Forward Transconductance VDS = 40V , ID = 26A (Note 4) -35-S

Input Capacitance
Output Capacitance - 540 700 pF
Reverse Transfer Capacitance - 66 100 pF

= 25V, VGS = 0V

V

DS

f = 1MHz

Total Gate Charge at 10V

V

= 160V, ID = 52A

Gate to Source Gate Charge - 19 - nC
Gate to Drain “Miller” Charge - 24 - nC

DS

V

= 10V

GS

(Note 4, 5)

- 2230 2900 pF

-4963nC

µA

o

C

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time
Turn-On Rise Time - 175 359 ns
Turn-Off Delay Time - 48 107 ns
Turn-Off Fall Time - 29 68 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 1.4mH, IAS = 52A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 52A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 52 A
Maximum Pulsed Drain to Source Diode Forward Current - - 204 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 1.3 - µC

, Starting TJ = 25°C

DSS

= 100V, ID = 20A

V

DD

R

= 25Ω

G

(Note 4, 5)

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/µs (Note 4)

F

= 52A - - 1.5 V

SD

= 52A

SD

- 53 115 ns

- 162 - ns

FDP52N20 / FDPF52N20T Rev. A

2

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Typical Performance Characteristics

FDP52N20 / FDPF52N20T N-Channel MOSFET

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

V

GS

Top : 1 5 .0 V

2

10

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V
Bo ttom : 5.5 V

1

10

0

10

, Drain Current [A]

D

I

-1

10

-1

10

VDS, Drain-Source Voltage [V]

2

10

150°C

1

10

25°C

-55°C

, Drain Current [A]

D

I

* Note s :

µs P ulse Test

1. 250
= 25°C

2. T

C

0

10

1

10

0

10

24681012

* Note s :

1. V

2. 25 0

= 40V

DS

µs Pulse Test

VGS, G a te -Sou r c e V o lta g e [V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

0.12

0.10

0.08

[Ω],

0.06

DS(ON)

R

0.04

0.02

Drain-Source On-Resistance

0.00
0 25 50 75 100 125 150

VGS = 10V

ID, Drain Current [A]

VGS = 20V

* No te : TJ = 25°C

2

10

1

10

150℃

25℃

, Reverse Drain Current [A]

DR

I

0

10

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

* Notes :

1. V

2. 25 0

= 0V

GS

µs Pulse Test

VSD, S o u rc e-D rain v oltag e [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

6000

5000

4000

3000

2000

Capacitances [pF]

1000

0

-1

10

FDP52N20 / FDPF52N20T Rev. A

C

oss

C

iss

C

rss

VDS, Drain-Source Voltage [V]

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

12

10

VDS = 40V
VDS = 100V

8

* No te ;

= 0 V

1. V

GS

2. f = 1 MHz

0

10

1

10

6

4

, Gate-Source Voltage [V]

2

GS

V

0

0 102030405060

VDS = 160V

* No te : ID = 52A

QG, To ta l Gate Charg e [n C]

3

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