Fairchild FDP44N25, FDPF44N25T service manual

FDP44N25 / FDPF44N25T

TO-220

FDP Series

G

S

D

TO-220F

FDPF Series

G

S

D

D

G

S

250V N-Channel MOSFET

FDP44N25 / FDPF44N25T 250V N-Channel MOSFET

March 2009

TM

UniFET

Features

• 44A, 250V, R

• Low gate charge ( typical 47 nC)

• Low Crss ( typical 60 pF)

•Fast switching

• Improved dv/dt capability

= 0.069Ω @VGS = 10 V

DS(on)

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.

This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.

Absolute Maximum Ratings

Symbol Parameter FDP44N25 FDPF44N25T Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

J, TSTG

T

L

*Drain current limited by maximum junction temperature

Drain-Source Voltage 250 V
Drain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C)

Drain Current - Pulsed
Gate-Source voltage ± 30 V

Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

- Derate above 25°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

44

26.4
176 176*

2055 mJ

44 A

30.7 mJ

4.5 V/ns

307

2.45

300 °C

44*

26.4*

38

0.3

A
A

A

W

W/°C

Thermal Characteristics

Symbol Parameter FDP44N25 FDPF44N25T Unit

R

θJC

R

θCS

R

θJA

©2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDP44N25 / FDPF44N25T Rev. B

Thermal Resistance, Junction-to-Case 0.41 3.3 °C/W
Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP44N25 FDP44N25 TO-220 - - 50

FDPF44N25T FDPF44N25T TO-220F - - 50

FDP44N25 / FDPF44N25T 250V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics

BV

DSS

ΔBV
/ ΔT

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 1.7mH, IAS = 44A, VDD = 50V, RG = 25Ω, S tarting TJ = 25°C

3. ISD ≤ 44A, di/dt ≤ 200A/μs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA, TJ = 25°C 250 -- -- V
Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V

ID = 250μA, Referenced to 25°C -- 0.25 -- V/°C

VDS = 200V, TC = 125°C

--

--

--

-­Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V
Static Drain-Source

On-Resistance

VGS = 10V, ID = 22A -- 0.058 0.069 Ω

Forward Transconductance VDS = 40V , ID = 22A (Note 4) -- 32 -- S

Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 450 585 pF

f = 1.0MHz

-- 2210 2870 pF

Reverse Transfer Capacitance -- 60 90 pF

Turn-On Delay Time VDD = 125V, ID = 44A
Turn-On Rise Time -- 402 814 ns
Turn-Off Delay Time -- 85 179 ns
Turn-Off Fall Tim e -- 112 234 ns

RG = 25Ω

(Note 4, 5)

Total Gate Charge VDS = 200V, ID = 44A
Gate-Source Charge -- 18 -- nC
Gate-Drain Charge -- 24 -- nC

VGS = 10V

(Note 4, 5)

-- 53 117 ns

-- 47 61 nC

Maximum Continuous Drain-Source Diode Forward Current -- -- 44 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 176 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 44A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 44A
Reverse Recovery Charge -- 1.8 -- μC

, Starting TJ = 25°C

DSS

dIF/dt =100A/μs (Note 4)

-- 195 -- ns

10

1

μA
μA

FDP44N25 / FDPF44N25T Rev. B

2 www.fairchildsemi.com

Typical Performance Characteristics

24681012

10

0

10

1

10

2

150oC

25oC

-55oC

* Notes :

1. V

DS

= 40V

2. 250

μs Pulse Test

I

D

, Drain Current [A]

VGS, Gate-Source Voltage [V]

10

-1

10

0

10

1

10

0

10

1

10

2

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

* Notes :

1. 250

μs Pulse Test

2. T

C

= 25oC

I

D

, Drain Current [A ]

VDS, Drain-Source Voltage [V]

0 25 50 75 100 125 150

0.04

0.06

0.08

0.10

VGS = 20V

VGS = 10V

* Note : TJ = 25oC

R

DS(ON)

[Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

10

0

10

1

10

2

150oC

* Notes :

1. V

GS

= 0V

2. 250

μs Pulse Test

25oC

I

DR

, Reverse Drain Current [A]

VSD, Sourc e -Drain voltag e [V ]

10

-1

10

0

10

1

0

1000

2000

3000

4000

5000

6000

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

* Note :

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

0 102030405060

0

2

4

6

8

10

12

VDS = 125V

VDS = 50V

VDS = 200V

* Note : ID = 44A

V

GS

, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

FDP44N25 / FDPF44N25T 250V N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDP44N25 / FDPF44N25T Rev. B

3 www.fairchildsemi.com