Fairchild FDPF44N25 service manual
D
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FDPF44N25
250V N-Channel MOSFET
FDPF44N25 250V N-Channel MOSFET
TM
UniFET
Features
• 18A, 250V, R
• Low gate charge ( typical 47 nC)
•Low C
•Fast switching
• 100% avalanche tested
• Improved dv/dt capability
( typical 60 pF)
rss
= 0.069Ω @VGS = 10 V
DS(on)
D
G
S
TO-220F
FDPF Series
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi
cient switched mode power supplies and active power factor
correction.
G
S
Absolute Maximum Ratings
Symbol Parameter FDPF44N25 Unit
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P
D
T
J, TSTG
T
L
Drain-Source Voltage 250 V
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source voltage ±30 V
Single Pulsed Avalanche Energy
Avalanche Current (Note 1) 18 A
Repetitive Avalanche Energy (Note 1) 5.6 mJ
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
(Note 1)
(Note 2)
18
10.8
72 A
2055 mJ
56
0.45
300 °C
W/°C
-
A
A
W
Thermal Characteristics
Symbol Parameter Min. Max. Unit
R
θJC
R
θJA
©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDPF44N25 Rev A
Thermal Resistance, Junction-to-Case -- 2.23 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Widt h Quantity
FDPF44N25 FDPF44N25T TO-220F
Potting Type
FDPF44N25 FDPF44N25 TO-220F -- -- 50
-- -- 50
FDPF44N25 250V N-Channel MOSFET
Electrical Characteristics T
= 25°C unless otherwise noted
C
Symbol Parameter Conditions Min. Typ. Max Units
Off Characteristics
BV
DSS
∆BV
/ ∆T
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Drain-Source Diode Characteristics and Maximum Ratings
I
S
I
SM
V
SD
t
rr
Q
rr
Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 250 -- -- V
Breakdown Voltage Temperature
DSS
Coefficient
J
Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V
ID = 250µA, Referenced to 25°C -- 0.25 -- V/°C
VDS = 200V, TC = 125°C
--
--
--
--
Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA
Gate Threshold Voltage VDS = VGS, ID = 250µA 3.0 -- 5.0 V
Static Drain-Source
On-Resistance
Forward Transconductance VDS = 40V, ID = 9A
Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 450 585 pF
VGS = 10V, ID = 9A -- 0.058 0.069 Ω
(Note 4)
-- 32 -- S
-- 2210 2870 pF
f = 1.0MHz
Reverse Transfer Capacitance -- 60 90 pF
Turn-O n Delay Time VDD = 125V, ID = 44A
Turn-O n Ris e Ti me -- 402 814 ns
RG = 25Ω
-- 53 11 7 ns
Turn-O ff Delay Time -- 85 179 ns
Turn-O ff Fall Time -- 11 2 234 ns
Total Gate Charge VDS = 200V, ID = 44A
Gate-Source Charge -- 18 -- nC
VGS = 10V
Gate-Drain Charge -- 24 -- nC
(Note 4, 5)
-- 47 61 nC
(Note 4, 5)
Maximum Continuous Drain-Source Diode Forward Current -- -- 18 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 72 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 18A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 44A
Reverse Recovery Charge -- 1.8 -- µC
dIF/dt =100A/µs (Note 4)
-- 195 -- ns
10
1
µA
µA
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 10.1mH, IAS = 18A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 18A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
, Starting TJ = 25°C
DSS
FDPF44N25 Rev A
2 www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
FDPF44N25 250V N-Channel MOSFET
2
10
1
10
, Drain Current [A]
D
I
0
10
10
V
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
-1
GS
0
10
VDS, Drain-Source Voltage [V]
2
10
150oC
25oC
Notes :∝
1. 250レs Pulse Test
= 25∩
2. T
C
1
10
1
10
, Drain Current [A]
D
I
0
10
2 4 6 8 10 12
VGS, Gate-Source Voltage [V]
-55oC
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue
0.10
0.08
],
[ヘ
0.06
DS(ON)
R
Drain-Source On-Resistance
0.04
0 25 50 75 100 125 150
VGS = 10V
ID, Drain Current [A]
VGS = 20V
Note : T∝J = 25∩
2
10
1
10
, Reverse Drain Current [A]
DR
I
0
10
0.2 0.4 0.6 0.8 1. 0 1.2 1.4 1.6 1.8
150∩
VSD, Source-Drain voltage [V]
25∩
Notes :∝
1. VGS = 0V
2. 250
Notes :∝
1. VDS = 40V
2. 250
レs Pulse Test
レs Pulse Test
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
6000
5000
4000
3000
2000
Capacitances [pF]
1000
FDPF44N25 Rev A
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
gd
C
= C
rss
gd
C
oss
C
iss
Note ;∝
1. VGS = 0 V
10
2. f = 1 MHz
1
C
rss
0
-1
10
0
10
VDS, Drain-Source Voltage [ V]
12
10
8
VDS = 50V
VDS = 125V
VDS = 200V
6
4
, Gate-Source Voltage [V]
2
GS
V
0
0 10203040506070
Note : I∝D = 44A
QG, Total Gate Charge [nC]
3 www.fairchildsemi.com
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