Fairchild FDP3N50NZ, FDPF3N50NZ service manual
tm
FDP3N50NZ / FDPF3N50NZ N-Channel MOSFET
G
S
D
G
S
D
TO-220
FDP Series
TO-220F
FDPF Series
(potted)
G
S
D
UniFET-II
FDP3N50NZ / FDPF3N50NZ
N-Channel MOSFET
500V, 3A, 2.5
Features
•R
• Low Gate Charge (Typ. 6.2nC)
•Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
•RoHS Compliant
= 2.1 (Typ.)@ VGS = 10V, ID = 1.5A
DS(on)
(Typ. 2.5pF)
rss
Description
These N-Channel enhancement mode power field effect transis
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advance technology has been especially tailored to mini
mize on-state resistance, provide superior switching perfor
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi
cient switching mode power supplies and active power factor
correction.
March 2010
TM
MOSFET Maximum Ratings T
Symbol Parameter FDP3N50NZ FDPF3N50NZ Units
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns
P
D
, T
T
J
STG
T
L
*Drain current limited by maximum junction temperature
Drain to Source Voltage 500 V
Gate to Source Voltage ±25 V
Drain Current
Drain Current - Pulsed (Note 1) 12 12* A
Single Pulsed Avalanche Energy (Note 2) 113 mJ
Avalanche Current (Note 1) 3 A
Repetitive Avalanche Energy (Note 1) 5.4 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
o
= 25
C unless otherwise noted*
C
-Continuous (T
-Continuous (T
(T
= 25oC) 54 27 W
C
- Derate above 25
= 25oC) 3 3*
C
= 100oC) 1.8 1.8*
C
o
C 0.43 0.21 W/oC
300
Thermal Characteristics
Symbol Parameter
R
JC
CS
R
JA
Thermal Resistance, Junction to Case 2.3 4.6
Thermal Resistance, Case to Sink Typ. - Thermal Resistance, Junction to Ambient 62.5 62.5
FDP3N50NZ FDPF3N50NZ
A
o
C
o
C
Units
o
C/WR
©2010 Fairchild Semiconductor Corporation
FDP3N50NZ / FDPF3N50NZ Rev. A
www.fairchildsemi.com1
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDP3N50NZ FDP3N50NZ TO-220 - - 50
FDPF3N50NZ FDPF3N50NZ TO-220F - - 50
FDP3N50NZ / FDPF3N50NZ N-Channel MOSFET
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
BV
T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250A, VGS = 0V, TC = 25oC 500 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±25V, V
I
= 250A, Referenced to 25oC-0.5-V/
D
V
= 500V, V
DS
= 400V, V
V
DS
= 0V - - 1
GS
= 0V,TC = 125oC- - 10
GS
= 0V - - ±10 A
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250A3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 1.5A - 2.1 2.5
V
Forward Transconductance
= 20V, ID = 1.5A (Note 4)
DS
-1.9-S
Dynamic Characteristics
C
C
C
Q
Q
Q
iss
oss
rss
g(tot)
gs
gd
Input Capacitance
Output Capacitance - 30 45 pF
Reverse Transfer Capacitance - 2.5 5 pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 1.4 - nC
Gate to Drain “Miller” Charge - 3.1 - nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 15 40 ns
Turn-Off Delay Time - 26 60 ns
Turn-Off Fall Time - 17 45 ns
= 25V, VGS = 0V
V
DS
f = 1MHz
V
= 400V ID = 3A
DS
V
= 10V
GS
(Note 4, 5)
= 250V, ID = 3A
V
DD
V
= 10V, R
GS
(Note 4, 5)
GEN
= 25
- 210 280 pF
-6.29nC
-1030ns
A
o
C
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 25mH, IAS = 3A, VDD = 50V, RG = 25, S tarting TJ = 25C
3. ISD 3A, di/dt 200A/s, VDD BV
4. Pulse Test: Pulse Width 300 s, Duty cycle 2.0%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP3N50NZ / FDPF3N50NZ Rev. A
Maximum Continuous Drain to Source Diode Forward Current - - 3 A
Maximum Pulsed Drain to Source Diode Forward Current - - 12 A
Drain to Source Diode Forward Voltage VGS = 0V, I
Reverse Recovery Time
Reverse Recovery Charge - 0.52 - C
, Starting TJ = 25C
DSS
= 3A - - 1.4 V
SD
V
= 0V, I
GS
dI
/dt = 100A/s (Note 4)
F
SD
2
= 3A
- 190 - ns
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Typical Performance Characteristics
0.1 1 10
0.03
0.1
1
10
*Notes:
1. 250
s Pulse Test
2. T
C
= 25oC
V
GS
= 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
I
D
, Drain Current[A]
VDS, Drain-Source Voltage[V]
25
3456789
0.1
1
10
-55oC
150oC
*Notes:
1. V
DS
= 20V
2. 250
s Pulse Test
25oC
I
D
, Drain Current[A]
VGS, Gate-Source Voltage [V]
0246
1.6
2.4
3.2
4.0
4.8
5.6
*Note: TC = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[],
Drain-Source On-Resistance
ID, Drain Current [A]
0.3 0.6 0.9 1.2 1.5
0.1
1
10
20
*Notes:
1. VGS = 0V
2. 250
s Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body D iode Forward Voltage [V ]
25oC
0.1 1 10 30
0
100
200
300
400
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V ]
02467
0
2
4
6
8
10
*Note: ID = 3A
VDS = 100V
V
DS
= 250V
V
DS
= 400V
V
GS
, Gate-Source Voltage [V]
Qg, Total Ga te Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDP3N50NZ / FDPF3N50NZ N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDP3N50NZ / FDPF3N50NZ Rev. A
3
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