Fairchild FDP39N20, FDPF39N20 service manual

FDP39N20 / FDPF39N20

TO-220

FDP Series

G

S

D

TO-220F

FDPF Series

G

S

D

D

G

S

200V N-Channel MOSFET

FDP39N20 / FDPF39N20 200V N-Channel MOSFET

April 2007

TM

UniFET

Features

• 39A, 200V, R

• Low gate charge ( typical 38 nC)

•Low C

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

( typical 57 pF)

rss

= 0.066Ω @VGS = 10 V

DS(on)

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.

This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.

Absolute Maximum Ratings

Symbol Parameter FDP39N20 FDPF39N20 Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

P

D

T

J, TSTG

T

L

* Drain current limited by maximum junction temperature

Drain-Source Voltage 200 V

Drain Current - Continuous (TC = 25°C)

Drain Current - Pulsed

Gate-Source voltage ±30 V

Single Pulsed Avalanche Energy

Avalanche Current (Note 1) 39 A

Repetitive Avalanche Energy (Note 1) 25.1 mJ

Power Dissipation (TC = 25°C)

Operating and Storage Temperature Range -55 to +150 °C

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

- Continuous (TC = 100°C)

(Note 1)

(Note 2)

- Derate above 25°C

39

23.4

156 156 ∗ A

860 mJ

251

2.0

300 °C

39 *

23.4 ∗

37

0.29

W/°C

Thermal Characteristics

A
A

W

Symbol Parameter FDP39N20 FDPF39N20 Unit

R

θJC

R

θCS

R

θJA

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDP39N20 / FDPF39N20 Rev. B

Thermal Resistance, Junction-to-Case 0.5 3.4 °C/W

Thermal Resistance, Case-to-Sink Typ. 0.5 - °C/W

Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tap e Width Quantity

FDP39N20 FDP39N20 TO-220 - - 50

FDPF39N20 FDPF39N20 TO-220F - - 50

FDP39N20 / FDPF39N20 200V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics

BV

DSS

ΔBV
/ ΔT

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA 200 -- -- V

Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 200V, VGS = 0V

ID = 250μA, Referenced to 25°C -- 0.2 -- V/°C

VDS = 160V, TC = 125°C

--

--

--

--

Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250μA 3.0 -- 5.0 V

Static Drain-Source
On-Resistance

VGS = 10V, ID = 19.5A -- 0.056 0.066 Ω

Forward Transconductance VDS = 40V, ID = 19.5A (Note 4) -- 28.5 -- S

Input Capacitance VDS = 25V, VGS = 0V,

Output Capacitance -- 400 520 pF

f = 1.0MHz

-- 1640 2130 pF

Reverse Transfer Capacitance -- 57 85 pF

Turn-O n Delay Time VDD = 100V, ID = 39A

Turn-O n Rise Time -- 160 330 ns

RG = 25Ω

-- 30 70 ns

Turn-O ff Delay Time -- 150 310 ns

Turn-O ff Fall Time -- 150 310 ns

Total Gate Charge VDS = 160V, ID = 39A

Gate-Source Charge -- 11 -- nC

VGS = 10V

Gate-Drain Charge -- 16.5 -- nC

(Note 4, 5)

-- 38 49 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 39 A

Maximum Pulsed Drain-Source Diode Forward Current -- -- 156 A

Drain-Source Diode Forward Voltage VGS = 0V, IS = 39A -- -- 1.4 V

Reverse Recovery Time VGS = 0V, IS = 39A

Reverse Recovery Charge -- 1.1 -- μC

dIF/dt =100A/μs (Note 4)

-- 152 -- ns

10

1

μA
μA

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 0.85mH, IAS = 39A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 39A, di/dt ≤ 200A/μs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

, Starting TJ = 25°C

DSS

FDP39N20 / FDPF39N20 Rev. B

2 www.fairchildsemi.com

Typical Performance Characteristics

10

-1

10

0

10

1

10

0

10

1

10

2

V

GS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

* Notes :

1. 250

μs Pulse Test

2. T

C

= 25oC

I

D

, Drain Current [A]

VDS, Drain-Source Voltage [V]

24681012

10

0

10

1

10

2

150oC

25oC

-55oC

* Notes :

1. V

DS

= 40V

2. 250

μs Pulse Test

I

D

, Drain Current [A]

VGS, Gate-Source Voltage [V]

0 25 50 75 100 125

0.04

0.06

0.08

0.10

0.12

0.14

VGS = 20V

VGS = 10V

* Note : TJ = 25oC

R

DS(ON)

[Ω],

Drain-Source On-Resistance

ID, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

10

0

10

1

10

2

150oC

* Notes :

1. V

GS

= 0V

2. 250

μs Pulse Test

25oC

I

DR

, Reverse Drain Current [A]

VSD, Source-Drain voltage [V]

10

-1

10

0

10

1

0

2000

4000

C

iss

= Cgs + Cgd (Cds = shorted)

C

oss

= Cds + C

gd

C

rss

= C

gd

* Note :

1. V

GS

= 0 V

2. f = 1 MHz

C

rss

C

oss

C

iss

Capacitances [pF]

VDS, Drain-Source Voltage [V]

0 102030405060

0

2

4

6

8

10

12

VDS = 100V

VDS = 40V

VDS = 160V

* Note : ID = 39A

V

GS

, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

FDP39N20 / FDPF39N20 200V N-Channel MOSFET

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

FDP39N20 / FDPF39N20 Rev. B

3 www.fairchildsemi.com