Fairchild FDPF3860T service manual

tm

FDPF3860T

N-Channel PowerTrench® MOSFET

100V, 20A, 38.2mΩ

FDPF3860T N-Channel PowerTrench

March 2008

Description

•R

• Fast switching speed

• Low gate charge

• High performance trench technology for extremely low R

• High power and current handling capability

• RoHS compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 15 V/ns
P

D

, T

T

J

T

L

= 38.2mΩ ( MAX ) @ VGS = 10V, ID = 5.9A

DS(on)

DS(on)

D

G

S

Symbol Parameter Ratings Units

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V

Drain Current
Drain Current - Pulsed (Note 1) 80 A

Single Pulsed Avalanche Energy (Note 2) 278 mJ
Avalanche Current (Note 1) 20 A
Repetitive Avalanche Energy (Note 1) 3.4 mJ

Power Dissipation

STG

Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

TO-220F

o

= 25

C

- Continuous (T

- Continuous (T

(T

C

- Derate above 25

C unless otherwise noted

= 25oC) 33.8 W

General Description

This N-Channel MOSFET is produced using Fairchild Semicon­ductor’s advanced PowerTrench process that has been espe­cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.

Application

• DC to AC converters / Synchronous Rectification

D

G

S

= 25oC) 20

C

= 100oC) 12.7

C

o

C0.27W/

300

o

o

®

MOSFET

A

o

C

C
C

Thermal Characteristics

Symbol Parameter Ratings Units

R

θJC

R

θJA

©2008 Fairchild Semiconductor Corporation
FDPF3860T Rev. A

Thermal Resistance, Junction to Case 3.7
Thermal Resistance, Junction to Ambient 62.5

o

C/W

www.fairchildsemi.com1

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDPF3860T FDPF3860T TO-220F - - 50

FDPF3860T N-Channel PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
∆BV

∆T
I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TJ = 25oC 100 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V

I

= 250µA, Referenced to 25oC-0.1-V/

D

V

= 80V, V

DS

= 48V, TC = 150oC - - 500

V

DS

= 0V - - 1

GS

= 0V - - ±100 nA

DS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Gate Threshold Voltage VGS = VDS, ID = 250µA2.5-4.5V
Static Drain to Source On Resistance VGS = 10V, ID = 5.9A - 29.1 38.2 mΩ
Forward Transconductance VDS = 10V , ID = 5.9A (Note 4) -21-S

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance
Output Capacitance - 145 190 pF
Reverse Transfer Capacitance - 60 90 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q

Q

g(tot)
gs

gd

Turn-On Delay Time
Turn-On Rise Time - 17 45 ns
Turn-Off Delay Time - 24 60 ns
Turn-Off Fall Time - 7 25 ns
Total Gate Charge at 10V
Gate to Source Gate Charge - 7 - nC

Gate to Drain “Miller” Charge - 8 - nC

= 25V, VGS = 0V

V

DS

f = 1MHz

= 50V, ID = 5.9A

V

DD

V

= 10V, R

GS

(Note 4, 5)

V

= 80V, ID = 5.9A

DS

V

= 10V

GS

(Note 4, 5)

GEN

= 6Ω

- 1350 1800 pF

-1540ns

-2335nC

µA

o

C

®

MOSFET

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L =16mH, IAS = 5.9A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 5.9A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

FDPF3860T Rev. A

Maximum Continuous Drain to Source Diode Forward Current - - 20 A
Maximum Pulsed Drain to Source Diode Forward Current - - 80 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 56 - nC

, Starting TJ = 25°C

DSS

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/µs (Note 4)

F

= 5.9A - - 1.3 V

SD

= 5.9A

SD

2

-40-ns

www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

200

V

= 15.0 V

GS

10.0 V

100

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

10

,Drain Current[A]

D

I

*Notes:

1. 250

µs Pulse Test

= 25oC

2. T

1

0.1 1 10

C

VDS,Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

0.14

0.12

200

100

150oC

-55oC

10

,Drain Current[A]

D

I

1

45678

25oC

*Notes:

1. V

= 20V

DS

2. 250µs Pulse Test

VGS,Gate-Source Voltage[V]

200

100

FDPF3860T N-Channel PowerTrench

®

MOSFET

0.10

[Ω],

0.08

DS(ON)

R

0.06

0.04

Drain-Source On-Resistance

0.02
0 25 50 75 100

VGS = 10V

*Note: TJ = 25oC

ID, Drain Current [A]

VGS = 20V

10

, Reverse Drain Current [A]

S

I

1

0.00.40.81.2

VSD, Body D io de Forward Vo lta g e [V]

150oC

25oC

*Notes:

1. VGS = 0V

2. 250

µs Pulse Test

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

2000

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

C

oss

iss

C

= C

rss

gd

1500

1000

Capacitances [pF]

500

0

0.1 1 10

C

oss

C

rss

VDS, Drain-Source Voltage [V ]

gd

*Note:

1. V

2. f = 1MHz

= 0V

GS

30

10

VDS = 80V
V

= 50V

DS

V

8

DS

= 25V

6

4

, Gate-Source Voltage [V]

GS

V

2

*Note: ID = 5.9A

0

0 5 10 15 20 25

Qg, Total Gate Charge [nC]

1.4

FDPF3860T Rev. A

3

www.fairchildsemi.com