Fairchild FDP33N25, FDPF33N25T service manual

FDP33N25 / FDPF33N25T

250V N-Channel MOSFET

FDP33N25 / FDPF33N25T 250V N-Channel MOSFET

October

TM

UniFET

Features

• 33A, 250V, R

• Low gate charge ( typical 36.8 nC)

• Low Crss ( typical 39 pF)

•Fast switching

• Improved dv/dt capability

G

= 0.094Ω @VGS = 10 V

DS(on)

D

S

TO-220

FDP Series

D

G

S

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.

This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.

D

G

TO-220F

FDPF Series

S

Absolute Maximum Ratings

Symbol Parameter FDP33N25 FDPF33N25T Unit

V

DSS

I

D

I

DM

V

GSS

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt
P

D

T

J, TSTG

T

L

*Drain current limited by maximum junction temperature

Drain-Source Voltage 250 V
Drain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C)

Drain Current - Pulsed
Gate-Source voltage ± 30 V

Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy

Power Dissipation (TC = 25°C)

- Derate above 25°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

(Note 1)

(Note 2)
(Note 1)
(Note 1)
(Note 3)

33

20.4
132 132*

918 mJ

33 A

23.5 mJ

4.5 V/ns

235

1.89

300 °C

33*

20.4*

37

0.29

A
A

A

W

W/°C

Thermal Characteristics

Symbol Parameter FDP33N25 FDPF33N25T Unit

R

θJC

R

θCS

R

θJA

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDP33N25 / FDPF33N25T Rev. B

Thermal Resistance, Junction-to-Case 0.53 3.4 °C/W
Thermal Resistance, Case-to-Sink Typ. 0.5 -- °C/W
Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP33N25 FDP33N25 TO-220 - - 50

FDPF33N25T FDPF33N25T TO-220F - - 50

FDP33N25 / FDPF33N25T 250V N-Channel MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV
/ ∆T

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 1.35mH, IAS = 33A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 33A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 250 -- -- V
Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V

ID = 250µA, Referenced to 25°C -- 0.25 -- V/°C

VDS = 200V, TC = 125°C

--

--

--

-­Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250µA 3.0 -- 5.0 V
Static Drain-Source

On-Resistance

VGS = 10V, ID = 16.5A -- 0.077 0.094 Ω

Forward Transconductance VDS = 40V , ID = 16.5A (Note 4) -- 26.6 -- S

Input Capacitance VDS = 25V, VGS = 0V,
Output Capacitance -- 330 430 pF

f = 1.0MHz

-- 1640 2135 pF

Reverse Transfer Capacitance -- 39 59 pF

Turn-On Delay Time VDD = 125V, ID = 33A
Turn-On Rise Time -- 230 470 ns

RG = 25Ω

-- 35 80 ns

Turn-Off Delay Time -- 75 160 ns
Turn-Off Fall Time -- 120 250 ns
Total Gate Charge VDS = 200V, ID = 33A
Gate-Source Charge -- 10 -- nC

VGS = 10V

Gate-Drain Charge -- 17 -- nC

(Note 4, 5)

-- 36.8 48 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 33 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 132 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 33A -- -- 1.4 V
Reverse Recovery Time VGS = 0V, IS = 33A
Reverse Recovery Charge -- 1.71 -- µC

, Starting TJ = 25°C

DSS

dIF/dt =100A/µs (Note 4)

-- 220 -- ns

10

1

µA
µA

FDP33N25 / FDPF33N25T Rev. B

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

FDP33N25 / FDPF33N25T 250V N-Channel MOSFET

10

10

, Drain Current [A]

D

I

10

2

V
Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

1

0

-1

10

GS

0

10

VDS, Drain-Source Voltage [V]

2

10

1

10

, Drain Current [A]

D

I

10

150oC

25oC

0

24681012

10

* Notes :

1. 250

2. T

1

µs Pulse Test

= 25oC

C

VGS, Gate-Source Voltage [V]

-55oC

* Notes :

= 40V

1. V

DS

µs Pulse Test

2. 250

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

0.25

0.20

VGS = 10V

0.15

[Ω],

DS(ON)

0.10

R

0.05

Drain-Sour ce On-Resist an ce

0.00
0 20 40 60 80 100

ID, Drain Current [A]

VGS = 20V

* Note : TJ = 25oC

2

10

1

10

, Reverse Drain Current [A]

DR

I

0

10

0.20.40.60.81.01.21.41.6

150oC

VSD, Source-Drain voltage [V]

25oC

* Notes :

1. V

= 0V

GS

µs Pulse Test

2. 250

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

4000

Capacitances [pF]

3000

2000

1000

0

-1

10

C

oss

C

iss

C

rss

VDS, Drain-Source Voltage [V]

FDP33N25 / FDPF33N25T Rev. B

C

= Cgs + Cgd (Cds = shorte d )

iss

C

= Cds + C

oss

gd

C

= C

rss

gd

* Note :

1. V

= 0 V

GS

2. f = 1 MHz

0

10

1

10

12

10

8

VDS = 50V
VDS = 125V
VDS = 200V

6

4

, Gate-Sourc e Voltage [V]

2

GS

V

0

0 10203040

QG, Total Gate Ch a rg e [nC]

3 www.fairchildsemi.com

* Note : ID = 33A