Fairchild FDPF320N06L service manual
FDPF320N06L
G
S
D
TO-220F
(Retractable)
G
E
C
N-Channel PowerTrench® MOSFET
60V, 21A, 25mΩ
FDPF320N06L N-Channel PowerTrench
December 2010
Features
•R
•R
• Low Gate Charge ( Typ. 23.2nC)
•Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
•RoHS Compliant
= 20mΩ ( Typ.)@ VGS = 10V, ID = 21A
DS(on)
= 23mΩ ( Typ.)@ VGS = 5V, ID = 17A
DS(on)
( Typ. 64pF)
rss
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC converters / Synchronous Rectification
MOSFET Maximum Ratings T
Symbol Parameter FDPF320N06L Units
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
P
D
, T
T
J
STG
T
L
*Drain current limited by maximum junction temperature
Drain to Source Voltage 60 V
Gate to Source Voltage ±20 V
Drain Current
Drain Current - Pulsed (Note 1) 84 A
Single Pulsed Avalanche Energy (Note 2) 66 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
o
= 25
C unless otherwise noted*
C
- Continuous (T
- Continuous (T
(T
= 25oC) 26 W
C
- Derate above 25
= 25oC) 21
C
= 100oC) 15
C
o
C0.17W/
300
o
o
®
MOSFET
A
o
C
C
C
Thermal Characteristics
Symbol Parameter
R
θJC
R
θJA
©2010 Fairchild Semiconductor Corporation
FDPF320N06L Rev. A4
Thermal Resistance, Junction to Case 5.8
Thermal Resistance, Junction to Ambient 62.5
FDPF320N06L
www.fairchildsemi.com1
Units
o
C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDPF320N06L FDPF320N06L TO-220F - - 50
FDPF320N06L N-Channel PowerTrench
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 60 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V
I
= 250μA, Referenced to 25oC - 0.04 - V/oC
D
V
= 48V, V
DS
= 48V, TC = 150oC - - 500
V
DS
= 0V - - 1
GS
= 0V - - ±100 μA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250μA1.0-2.5V
V
= 10V, ID = 21A - 20 25 mΩ
Static Drain to Source On Resistance
Forward Transconductance
GS
= 5V, ID = 17A - 23 38 mΩ
V
GS
= 10V , ID = 21A (Note 4)
V
DS
-34-S
Dynamic Characteristics
C
C
C
Q
Q
Q
Q
iss
oss
rss
g(tot)
g(tot)
gs
gd
Input Capacitance
Output Capacitance - 115 150 pF
Reverse Transfer Capacitance - 64 - pF
= 25V, VGS = 0V
V
DS
f = 1MHz
Total Gate Charge at 10V VGS = 10V
Total Gate Charge at 5V VGS = 5V - 12.7 16.5 nC
Gate to Source Gate Charge - 3.4 - nC
V
I
D
= 48V
DS
= 21A
Gate to Drain “Miller” Charge - 6.3 - nC
- 1105 1470 pF
- 23.2 30.2 nC
μA
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 34 78 ns
Turn-Off Delay Time - 27 64 ns
Turn-Off Fall Time - 8 26 ns
-1642ns
= 30V, ID = 21A
V
DD
V
= 5V, R
GS
(Note 4, 5)
GEN
= 4.7Ω
ESR Equivalent Series Resistance (G-S) - 2 - Ω
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, I
≤ 21A, di/dt ≤ 200A/μs, VDD ≤ BV
3. I
SD
4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 21 A
Maximum Pulsed Drain to Source Diode Forward Current - - 84 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 23 - nC
= 11.5A, RG = 25Ω, Starting TJ = 25°C
AS
, Starting TJ = 25°C
DSS
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/μs (Note 4)
F
= 21A - - 1.3 V
SD
= 21A, VDD = 48V
SD
-27-ns
FDPF320N06L Rev. A4
2
www.fairchildsemi.com
Typical Performance Characteristics
0.1 1 4
2
10
100
200
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25oC
I
D
, Drain Current[A]
VDS, Drain-Source Voltage[V]
V
GS
= 15.0V
10.0V
8.0V
5.0V
4.0V
3.5V
3.0V
12345
1
10
100
-55oC
175oC
*Notes:
1. V
DS
= 10V
2. 250
μs Pulse Test
25oC
I
D
, Drain Current[A]
VGS, Gate-Source Voltage[V]
0.0 0.5 1.0 1.5
1
10
100
*Notes:
1. VGS = 0V
2. 250
μs Pulse Test
175oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0 20406080100
0.01
0.02
0.03
0.04
*Note: TC = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.1 1 10 60
40
100
1000
4000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MH z
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
0 4 8 12162024
0
2
4
6
8
10
*Note: ID = 21A
VDS = 12V
V
DS
= 30V
V
DS
= 48V
V
GS
, Gate-Source Voltage [V]
Qg, Total Ga te Charge [nC ]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
FDPF320N06L N-Channel PowerTrench
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
®
MOSFET
FDPF320N06L Rev. A4
3
www.fairchildsemi.com
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