Fairchild FDPF2710T service manual

FDPF2710T

250V N-Channel PowerTrench MOSFET

FDPF2710T 250V N-Channel PowerTrench MOSFET

September 2007

General Description

This N-Channel MOSFET is produced using Fairchild Semicon­ductor’s advanced PowerTrench process that has been espe­cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.

Description

• 25A, 250V, R

• Fast switching speed

• Low gate charge

• High performance trench technology for extremely low R

• High power and current handling capability

= 36.3mΩ @VGS = 10 V

DS(on)

Application

• Ballast Application

D

G

D

G

S

TO-220F

S

Absolute Maximum Ratings

Symbol Parameter Ratings Unit

V

DS

V

GS

I

D

I

DM

E

AS

dv/dt Peak Diode Recovery dv/dt
P

D

T

J, TSTG

T

L

Drain-Source Voltage 250 V
Gate-Source voltage ± 30 V
Drain Current - Continuous (TC = 25°C)

- Continuous (T

Drain Current - Pulsed
Single Pulsed Avalanche Energy

Power Dissipation (TC = 25°C)

- Derate above 25°C
Operating and Storage Temperature Range -55 to +150 °C
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

= 100°C)

C

(Note 1)

(Note 2)
(Note 3) 4.5 V/ns

25

18.8
100

145 mJ

62.5

0.5

300 °C

DS(on)

A
A

A

W

W/°C

Thermal Characteristics

Symbol Parameter Min Max Unit

R

θJC

R

θJA

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDPF2710T Rev. A

Thermal Resistance, Junction-to-Case -- 2.0 °C/W
Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDPF2710T FDPF2710T TO-220F -- -- 50

FDPF2710T 250V N-Channel PowerTrench MOSFET

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BV
/ ∆T

I

DSS

I

GSSF

I

GSSR

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

Drain-Source Diode Characteristics and Maximum Ratings

I

S

I

SM

V

SD

t

rr

Q

rr

Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA, TJ = 25°C 250 -- -- V
Breakdown Voltage Temperature

DSS

Coefficient

J

Zero Gate Voltage Drain Current VDS = 250V, VGS = 0V

I

= 250µA, Referenced to 25°C--0.25--V/°C

D

= 250V, VGS = 0V,TC = 125°C

V

DS

--

--

--

-­Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA
Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

Gate Threshold Voltage VDS = VGS, ID = 250µA 3.0 3.9 5.0 V
Static Drain-Source On-Resistance VGS = 10V, ID = 25A -- 36.3 42.5 mΩ
Forward Transconductance VDS = 10V, ID = 25A

Input Capacitance

= 25V, VGS = 0V,

V

Output Capacitance -- 426 567 pF
Reverse Transfer Capacitance -- 97 146 pF

DS

f = 1.0MHz

Turn-On Delay Time VDD = 125V, ID = 50A

V

= 10V, R

Turn-On Rise Time -- 252 514 ns

GS

GEN

= 25Ω

(Note 4)

-- 63 -- S

-- 5470 7280 pF

-- 80 170 ns

Turn-Off Delay Time -- 112 234 ns
Turn-Off Fall Time -- 154 318 ns
Total Gate Charge VDS = 125V, ID = 50A

= 10V

V

Gate-Source Charge -- 34 -- nC

GS

Gate-Drain Charge -- 18 -- nC

(Note 4, 5)

-- 78 101 nC

(Note 4, 5)

Maximum Continuous Drain-Source Diode Forward Current -- -- 25 A
Maximum Pulsed Drain-Source Diode Forward Current -- -- 150 A
Drain-Source Diode Forward Voltage VGS = 0V, IS = 25A -- -- 1 . 2 V
Reverse Recovery Time VGS = 0V, IS = 50A

dI

/dt =130A/µs (Note 4)

Reverse Recovery Charge -- 1.3 -- µC

F

-- 163 -- ns

10

500µAµA

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 1mH, I

3. ISD ≤ 50A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

= 17A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

FDPF2710T Rev. A

2 www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

500

100

V

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V
Bottom : 5.5 V

GS

10

,Drain Current[A]

D

I

* Notes :

1. 250

µs Pulse Test

2. T

= 25oC

1

0.1 1 10

VDS,Drain-Source Voltage[V]

C

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperatue

0.07

0.06

250

100

150oC

10

,Drain Current[A]

D

I

1

46810

25oC

-55oC

* Notes :

1. V

DS

2. 250

= 20V

µs Pulse Test

VGS,Gate-Source Voltage[V]

150

* Notes :

100

1. V

=0V

GS

2. 250

µs Pulse Test

FDPF2710T 250V N-Channel PowerTrench MOSFET

0.05

[Ω],

0.04

DS(ON)

R

VGS = 10V

VGS = 20V

0.03

Drain-Source On-Resistance

0.02
0 255075100125150

* Note : TJ = 25oC

ID, Drain Current [A]

10

, Reverse Drain Current [A]

S

I

TA = 150oC

1

0.20.40.60.81.01.2

TA = 25oC

VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Capacitances [pF]

9000

6000

3000

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

= C

rss

gd

0

-1

10

VDS, Drain-Source Voltage [V]

gd

C

iss

C

oss

* Note:

1. V

= 0V

C

rss

0

10

GS

2. f = 1MHz

1

10

30

10

VDS = 50V

V

= 125V

8

V

DS

DS

= 200V

6

4

, Gate-Source Voltage [V]

GS

V

2

0

0 1020304050607080

* Note : ID = 50A

Qg, Total Gate Charge [nC]

FDPF2710T Rev. A

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