Fairchild FDPF190N15A service manual
FDPF190N15A
G
S
D
TO-220F
(Retractable)
G D S
N-Channel PowerTrench® MOSFET
150V, 27.4A, 19mΩ
FDPF190N15A N-Channel PowerTrench
April 2011
Features
•R
• Low Gate Charge ( Typ. 30nC)
•Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
•RoHS Compliant
= 14.7mΩ ( Typ.)@ VGS = 10V, ID = 27.4A
DS(on)
( Typ. 56pF)
rss
MOSFET Maximum Ratings T
Symbol Parameter Rating Units
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
P
D
, T
T
J
STG
T
L
Drain to Source Voltage 150 V
Gate to Source Voltage ±20 V
Drain Current
Drain Current - Pulsed (Note 1) 110 A
Single Pulsed Avalanche Energy (Note 2) 261 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
o
= 25
C unless otherwise noted*
C
- Continuous (T
- Continuous (T
(T
= 25oC) 33 W
C
- Derate above 25
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Converters
• Synchronous Rectification for Server/Telecom PSU
• Battery Charger
• AC motor drives and Uninterruptible Power Supplies
• Off-line UPS
= 25oC) 27.4
C
= 100oC) 17.4
C
o
C0.26W/
300
o
o
®
MOSFET
A
o
C
C
C
Thermal Characteristics
Symbol Parameter
R
θJC
R
θJA
©2011 Fairchild Semiconductor Corporation
FDPF190N15A Rev. A2
Thermal Resistance, Junction to Case 3.8
Thermal Resistance, Junction to Ambient 62.5
Rating
www.fairchildsemi.com1
Units
o
C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDPF190N15A FDPF190N15A TO-220F - - 50
FDPF190N15A N-Channel PowerTrench
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 150 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V
I
= 250μA, Referenced to 25oC - 0.14 - V/oC
D
V
= 120V, V
DS
= 120V, TC = 150oC - - 500
V
DS
= 0V - - 1
GS
= 0V - - ±100 nA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250μA2.0-4.0V
Static Drain to Source On Resistance VGS = 10V, ID = 27.4A - 14.7 19.0 mΩ
= 10V, ID = 27.4A (Note 4)
Forward Transconductance
V
DS
-64-S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
oss(er)
Q
g(tot)
Q
gs
Q
gd
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Input Capacitance
Output Capacitance - 700 930 pF
Reverse Transfer Capacitance - 56 85 pF
= 25V, VGS = 0V
V
DS
f = 1MHz
Energy Related Output Capacitance VDS = 75V, VGS = 0V - 252 - pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 8.8 - nC
Gate to Drain “Miller” Charge - 7.3 - nC
= 120V, ID = 27.4A
V
DS
V
= 10V
GS
Turn-On Delay Time
= 75V, ID = 27.4A
Turn-On Rise Time - 16 42 ns
Turn-Off Delay Time - 32 74 ns
Turn-Off Fall Time - 8 26 ns
V
DD
V
= 10V, R
GS
(Note 4, 5)
GEN
= 4.7Ω
ESR Equivalent Series Resistance (G-S) f = 1MHz - 1.5 - Ω
- 2020 2685 pF
-3039nC
-1846ns
μA
®
MOSFET
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3mH, I
≤ 27.4A, di/dt ≤ 200A/μs, VDD ≤ BV
3. I
SD
4. Pulse Test: Pulse width ≤ 300μs, Dual Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDPF190N15A Rev. A2
Maximum Continuous Drain to Source Diode Forward Current - - 27.4 A
Maximum Pulsed Drain to Source Diode Forward Current - - 110 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 0.18 - μC
= 13.2A, RG = 25Ω, Starting TJ = 25°C
AS
, Starting TJ = 25°C
DSS
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/μs, VDD = 120V(Note 4)
F
= 27.4A - - 1.3 V
SD
= 27.4A
SD
2
-76-ns
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Typical Performance Characteristics
0.1 1 2
4
10
100
200
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25oC
I
D
, Drain Current[A]
VDS, Drain-Source Voltage[V]
V
GS
= 15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
23456
1
10
100
200
-55oC
150oC
*Notes:
1. V
DS
= 10V
2. 250
μs Pulse Test
25oC
I
D
, Drain Current[A]
VGS, Gate-Source Voltag e[V]
0 255075100125
0.010
0.015
0.020
*Note: TC = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.0 0.5 1.0 1.5
1
10
100
200
*Notes:
1. VGS = 0V
2. 250
μs Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0.1 1 10 100 200
5
10
100
1000
5000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V ]
0 8 16 24 32
0
2
4
6
8
10
*Note: ID = 27.4A
VDS = 30V
V
DS
= 75V
V
DS
= 120V
V
GS
, Gate-Source Voltag e [V]
Qg, Total Ga te Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
FDPF190N15A N-Channel PowerTrench
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
®
MOSFET
FDPF190N15A Rev. A2
3
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