Fairchild FDP18N20F, FDPF18N20F service manual

tm

FDP18N20F / FDPF18N20FT

N-Channel MOSFET

200V, 18A, 0.14Ω

FDP18N20F / FDPF18N20FT N-Channel MOSFET

September 2009

TM

UniFET

Features

•R

• Low gate charge ( Typ. 20nC)

• Low C

• Fast switching

• 100% avalanche tested

• Improve dv/dt capability

• RoHS compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
P

D

, T

T

J

T

L

*Drain current limited by maximum junction temperature

= 0.12Ω ( Typ.)@ VGS = 10V, ID = 9A

DS(on)

( Typ. 24pF)

rss

G D S

Symbol Parameter FDP18N20F FDPF18N20FT Units

Drain to Source Voltage 200 V
Gate to Source Voltage ±30 V

D r a i n C urrent
Drain Current - Pulsed (Note 1) 72 72* A

Single Pulsed Avalanche Energy (Note 2) 324 mJ
Avalanche Current (Note 1) 18 A
Repetitive Avalanche Energy (Note 1) 10 mJ

Power Dissipation

STG

Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

TO-220
FDP Series

= 25oC unless otherwise noted

C

D

G

S

-Continuous (T

-Continuous (T

(T

= 25oC) 100 41 W

C

- Derate above 25

Description

These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.

This advanced technology has been especially tailored to mini­mize on-state resistance, provide superior switching perfor­mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.

D

G

TO-220F
FDPF Series

= 25oC) 18 18*

C

= 100oC) 10.8 10.8*

C

o

C 0.83 0.33 W/oC

S

300

o

o

Thermal Characteristics

Symbol Parameter FDP18N20F FDPF18N20FT Units

R

θJC
θCS

R

θJA

Thermal Resistance, Junction to Case 1.2 3.0
Thermal Resistance, Case to Sink Typ. 0.5 ­Thermal Resistance, Junction to Ambient 62.5 62.5

o

C/WR

A

C
C

©2009 Fairchild Semiconductor Corporation
FDP18N20F / FDPF18N20FT Rev. A

www.fairchildsemi.com1

FDP18N20F / FDPF18N20FT N-Channel MOSFET

Package Marking and Ordering Information T

= 25oC unless otherwise noted

C

Device Marking Device Package Reel Size Tape Width Quantity

FDP18N20F FDP18N20F TO-220 - - 50

FDPF18N20FT FDPF18N20FT TO-220F - - 50

Electrical Characteristics

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV

DSS

∆BV

DSS

/ ∆T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

R

DS(on)

g

FS

Dynamic Characteristics

C

iss

C

oss

C

rss

Q

g(tot)

Q

gs

Q

gd

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TJ = 25oC 200 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V

I

= 250µA, Referenced to 25oC-0.2-V/

D

V

= 200V, V

DS

= 160V, TC = 125oC - - 100

V

DS

= 0V - - 10

GS

= 0V - - ±100 nA

DS

Gate Threshold Voltage VGS = VDS, ID = 250µA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 9A - 0.12 0.14 Ω
Forward Transconductance VDS = 20V, ID = 9A (Note 4) - 13.6 - S

Input Capacitance
Output Capacitance - 200 270 pF
Reverse Transfer Capacitance - 24 35 pF

= 25V, VGS = 0V

V

DS

f = 1MHz

Total Gate Charge at 10V

V

= 160V, ID = 18A

Gate to Source Gate Charge - 5 - nC
Gate to Drain “Miller” Charge - 9 - nC

DS

V

= 10V

GS

(Note 4, 5)

- 885 1180 pF

-2026nC

µA

o

C

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time
Turn-On Rise Time - 50 110 ns
Turn-Off Delay Time - 50 110 ns
Turn-Off Fall Time - 40 90 ns

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 2mH, IAS = 18A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 18A, di/dt ≤ 200A/µs, VDD ≤ BV

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

Maximum Continuous Drain to Source Diode Forward Current - - 18 A
Maximum Pulsed Drain to Source Diode Forward Current - - 72 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 240 - nC

, Starting TJ = 25°C

DSS

= 100V, ID = 18A

V

DD

R

= 25Ω

G

(Note 4, 5)

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/µs (Note 4)

F

= 18A - - 1.5 V

SD

= 18A

SD

-1640ns

-80-ns

FDP18N20F / FDPF18N20FT Rev. A

2

www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

50

10

V

= 10.0V

GS

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

30

10

150oC

FDP18N20F / FDPF18N20FT N-Channel MOSFET

25oC

*Notes:

1. V

2. 250

= 20V

DS

µs Pulse Test

,Drain Current[A]

D

I

1

*Notes:

1. 250

2. T

µs Pulse Test

= 25oC

C

0.1 1 10

VDS,Drain-Source Voltage[V]

,Drain Current[A]

D

I

1

4567

VGS,Gate-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

0.25

0.20

[Ω],

DS(ON)

R

0.15

VGS = 10V

VGS = 20V

Drain-Source On-Resistance

*Note: TJ = 25oC

0.10
0 1020304050

ID, Drain Current [A]

100

150oC

25oC

10

, Reverse Drain Current [A]

S

I

1

0.0 0.4 0.8 1.2 1.6 2.0

*Notes:

1. VGS = 0V

µs Pulse Test

2. 250

VSD, Body Diode Forward V oltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

2000

1500

1000

Capacitances [pF]

500

0

0.1 1 10
VDS, Drain-Source Voltage [V]

FDP18N20F / FDPF18N20FT Rev. A

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

oss

C

rss

= C

gd

gd

*Note:

1. V

2. f = 1MH z

C

iss

C

oss

C

rss

10

VDS = 40V
V

= 100V

8

= 0V

GS

6

4

, Gate-Source Voltage [V]

GS

V

2

0

30

0 6 12 18 24

3

DS

= 160V

V

DS

*Note: ID = 18A

Qg, Total Ga te C harge [nC ]

www.fairchildsemi.com