Fairchild FDP17N60N, FDPF17N60NT service manual
FDP17N60N / FDPF17N60NT N-Channel MOSFET
UniFET
FDP17N60N / FDPF17N60NT
N-Channel MOSFET
600V, 17A, 0.34Ω
Features
•R
• Low Gate Charge ( Typ. 48nC)
•Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
•RoHS Compliant
= 0.29Ω ( Typ.)@ VGS = 10V, ID = 8.5A
DS(on)
( Typ. 23pF)
rss
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
July 2009
TM
G
TO-220
G D S
FDP Series
MOSFET Maximum Ratings T
Symbol Parameter FDP17N60N FDPF17N60NT Units
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns
P
D
, T
T
J
STG
T
L
*Drain current limited by maximum junction temperature
Drain to Source Voltage 600 V
Gate to Source Voltage ±30 V
Drain Current
Drain Current - Pulsed (Note 1) 68 68* A
Single Pulsed Avalanche Energy (Note 2) 838 mJ
Avalanche Current (Note 1) 17 A
Repetitive Avalanche Energy (Note 1) 24.5 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
D
G
S
= 25oC unless otherwise noted*
C
-Continuous (T
-Continuous (T
(T
= 25oC) 245 62.5 W
C
- Derate above 25
TO-220F
FDPF Series
S
= 25oC) 17 17*
C
= 100oC) 10.2 10.2*
C
o
C2.00.5W/
300
o
o
Thermal Characteristics
Symbol Parameter
R
θJC
θCS
R
θJA
Thermal Resistance, Junction to Case 0.51 2.0
Thermal Resistance, Case to Heat Sink Typ. - -
Thermal Resistance, Junction to Ambient 62.5 62.5
FDP17N60N FDPF17N60NT
Units
o
C/WR
A
o
C
C
C
©2009 Fairchild Semiconductor Corporation
FDP17N60N/FDPF17N60NT Rev. A
www.fairchildsemi.com1
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDP17N60N FDP17N60N TO-220 - - 50
FDPF17N60NT FDPF17N60NT TO-220F - - 50
FDP17N60N / FDPF17N60NT N-Channel MOSFET
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TC = 25oC 600 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
I
= 250µA, Referenced to 25oC-0.8-V/
D
V
= 600V, V
DS
= 480V, V
V
DS
= 0V - - 1
GS
= 0V,TC = 150oC- - 10
GS
= 0V - - ±100 nA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250µA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 8.5A - 0.29 0.34 Ω
= 20V, ID = 8.5A (Note 4)
Forward Transconductance
V
DS
-21-S
Dynamic Characteristics
C
C
C
Q
Q
Q
iss
oss
rss
g(tot)
gs
gd
Input Capacitance
Output Capacitance - 310 410 pF
Reverse Transfer Capacitance - 23 35 pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 13 - nC
Gate to Drain “Miller” Charge - 20 - nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 79 168 ns
Turn-Off Delay Time - 128 266 ns
Turn-Off Fall Time - 62 134 ns
= 25V, VGS = 0V
V
DS
f = 1MHz
V
= 480V ID = 17A
DS
V
= 10V
GS
( Note 4 , 5)
= 300V, ID = 17A
V
DD
V
= 10V, R
GS
( Note 4 , 5)
GEN
= 25Ω
- 2285 3040 pF
-4865nC
- 48 106 ns
µA
o
C
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5.8mH, IAS = 17A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 17A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP17N60N/FDPF17N60NT Rev. A
Maximum Continuous Drain to Source Diode Forward Current - - 74 A
Maximum Pulsed Drain to Source Diode Forward Current - - 68 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 7.2 - µC
, Starting TJ = 25°C
DSS
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/µs (Note 4)
F
= 17A - - 1.4 V
SD
= 17A
SD
2
- 575 - ns
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Typical Performance Characteristics
FDP17N60N / FDPF17N60NT N-Channel MOSFET
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
200
V
= 15.0 V
GS
100
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
5.0 V
, Drain Current[A]
1
D
I
0.1
0.1 1 10 20
*Notes:
1. 250
2. T
µs Pulse Test
= 25oC
C
VDS, Drain-Source Voltage[V]
100
10
, Drain Current[A]
D
I
1
456789
-55oC150oC
25oC
*Notes:
= 20V
1. V
DS
2. 250µs Pulse Test
VGS, Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
0.6
0.5
200
100
[Ω],
0.4
DS(ON)
R
VGS = 10V
VGS = 20V
10
150oC
25oC
0.3
, Reverse Drain Current [A]
Drain-Source On-Resistance
0.2
0 1020304050
*Note: TC = 25oC
ID, Drain Current [A]
S
I
1
0.2 0.4 0.8 1.2 1.4
VSD, Body Diode Forward Voltage [V]
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10000
C
iss
10
VDS = 120V
V
8
DS
V
DS
= 300V
= 480V
*Notes:
1. VGS = 0V
µs Pulse Test
2. 250
1000
C
oss
6
*Note:
100
Capacitances [pF]
10
0.1 1 10 30
= 0V
1. V
GS
2. f = 1MHz
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
C
rss
= C
gd
gd
VDS, Drain-Source Voltage [V]
C
rss
4
, Gate-Source Voltage [V]
GS
V
2
0
0 1020304050
*Note: ID = 17A
Qg, Total Gate Charge [nC]
FDP17N60N/FDPF17N60NT Rev. A
3
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