Fairchild FDP10N60ZU, FDPF10N60ZUT service manual
tm
May 2012
TO-220F
FDPF Series
G
S
D
TO-220
FDP Series
G D S
G
S
D
G
S
D
UniFET
FDP10N60ZU / FDPF10N60ZUT
N-Channel MOSFET, FRFET
600V, 9A, 0.8Ω
FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET
TM
Features
•R
• Low gate charge ( Typ. 31nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
MOSFET Maximum Ratings T
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns
P
D
, T
T
J
T
L
*Drain current limited by maximum junction temperature
= 0.65Ω ( Typ.)@ VGS = 10V, ID = 4.5A
DS(on)
( Typ. 15pF)
rss
Symbol Parameter FDP10N60ZU FDPF10N60ZUT Units
Drain to Source Voltage 600 V
Gate to Source Voltage ±30 V
Drain Current
Drain Current - Pulsed (Note 1) 36 36* A
Single Pulsed Avalanche Energy (Note 2) 100 mJ
Avalanche Current (Note 1) 9 A
Repetitive Avalanche Energy (Note 1) 18 mJ
Power Dissipation
STG
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
o
= 25
C unless otherwise noted*
C
-Continuous (T
-Continuous (T
(T
= 25oC) 180 42 W
C
- Derate above 25
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
= 25oC) 9 9*
C
= 100oC) 5.4 5.4*
C
o
C 1.45 0.3 W/oC
300
Thermal Characteristics
Symbol Parameter FDP10N60ZU FDPF10N60ZUT Units
R
θJC
θCS
R
θJA
Thermal Resistance, Junction to Case 0.7 3.0
Thermal Resistance, Junction to Ambient 0.5 Thermal Resistance, Junction to Ambient 62.5 62.5
A
o
C
o
C
o
C/WR
©2012 Fairchild Semiconductor Corporation
FDP10N60ZU/FDPF10N60ZUT Rev. C0
www.fairchildsemi.com1
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDP10N60ZU FDP10N60ZU TO-220 - - 50
FDPF10N60ZUT FDPF10N60ZUT TO-220F - - 50
FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 600 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
I
= 250μA, Referenced to 25oC-0.8-V/
D
V
= 600V, V
DS
= 480V, TC = 125oC - - 250
V
DS
= 0V - - 25
GS
= 0V - - ±10 μA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 4.5A - 0.65 0.8 Ω
Forward Transconductance VDS = 40V, ID = 4.5A - 12.5 - S
Dynamic Characteristics
C
C
C
Q
Q
Q
iss
oss
rss
g(tot)
gs
gd
Input Capacitance
Output Capacitance - 230 240 pF
Reverse Transfer Capacitance - 15 25 pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 8 - nC
Gate to Drain “Miller” Charge - 12 - nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 40 90 ns
Turn-Off Delay Time - 95 200 ns
Turn-Off Fall Time - 60 130 ns
= 25V, VGS = 0V
V
DS
f = 1MHz
V
= 480V, ID = 10A
DS
V
= 10V
GS
(Note 4)
= 300V, ID = 10A
V
DD
R
= 25Ω , VGS = 10V
G
(Note 4)
- 1490 1980 pF
-3140nC
-2560ns
μA
o
C
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 2mH, I
3. I
≤ 10A, di/dt ≤ 200A/μs, VDD ≤ BV
SD
4. Essentially Independent of Operating Temperature Typical Characteristics
FDP10N60ZU/FDPF10N60ZUT Rev. C0
Maximum Continuous Drain to Source Diode Forward Current - - 9 A
Maximum Pulsed Drain to Source Diode Forward Current - - 36 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 52 - nC
= 10A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
AS
, Starting TJ = 25°C
DSS
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/μs
F
= 10A - - 1.6 V
SD
= 10A
SD
2
-45-ns
www.fairchildsemi.com
Typical Performance Characteristics
110
1
20
20
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25oC
V
GS
= 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
I
D
,Drain Current[A]
VDS,Drain-Source Voltage[V]
30
10
345678
1
10
150oC
* Notes :
1. V
DS
= 20V
2. 250
μs Pulse Test
25oC
I
D
,Drain Current[A]
VGS,Gate-Source Voltage[V]
30
20
0 5 10 15 20 25 30
0.6
0.7
0.8
0.9
1.0
1.1
1.2
* Note : TJ = 25oC
VGS = 20V
VGS = 10V
R
DS(on)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.00.51.01.52.0
1
10
100
Notes:
1. VGS = 0V
2. 250
μs Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0.1 1 10
0
500
1000
1500
2000
2500
3000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
* Note:
1. V
GS
= 0V
2. f = 1MH z
C
rss
Capacitances [pF]
VDS, Drain-Source Volta ge [V ]
30
0 10203040
0
2
4
6
8
10
* Note : ID = 10A
VDS = 150V
V
DS
= 380V
V
DS
= 400V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gat e Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDP10N60ZU/FDPF10N60ZUT N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDP10N60ZU/FDPF10N60ZUT Rev. C0
3
www.fairchildsemi.com
Loading...