Fairchild FDP10N60NZ, FDPF10N60NZ service manual
September 2010
TO-220
FDP Series
G D S
G
S
D
G
S
D
TO-220F
FDPF Series
(potted)
G
S
D
UniFET-II
FDP10N60NZ / FDPF10N60NZ
N-Channel MOSFET
600V, 10A, 0.75
FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET
TM
Features
•R
• Low Gate Charge ( Typ. 23nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS compliant
MOSFET Maximum Ratings T
Symbol Parameter FDP10N60NZ FDPF10N60NZ Units
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns
P
D
, T
T
J
T
L
*Dran current limited by maximum junction temperature
= 0.64 ( Typ.)@ VGS = 10V, ID = 5A
DS(on)
( Typ. 10pF)
rss
Drain to Source Voltage 600 V
Gate to Source Voltage ±25 V
Drain Current
Drain Current - Pulsed (Note 1) 40 40* A
Single Pulsed Avalanche Energy (Note 2) 550 mJ
Avalanche Current (Note 1) 10 A
Repetitive Avalanche Energy (Note 1) 18.5 mJ
Power Dissipation
STG
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
o
= 25
C unless otherwise noted*
C
- Continuous (T
- Continuous (T
(T
= 25oC) 185 38 W
C
- Derate above 25
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
= 25oC) 10 10*
C
= 100oC) 6 6*
C
o
C1.50.3W/
300
Thermal Characteristics
Symbol Parameter
R
JC
CS
R
JA
Thermal Resistance, Junction to Case 0.68 3.3
Thermal Resistance, Case to Sink Typ 0.5 Thermal Resistance, Junction to Ambient 62.5 62.5
FDP10N60NZ FDPF10N60NZ
A
o
o
C
o
C
Units
o
C/WR
C
©2010 Fairchild Semiconductor Corporation
FDP10N60NZ / FDPF10N60NZ Rev. A
www.fairchildsemi.com1
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDP10N60NZ FDP10N60NZ TO-220 - - 50
FDPF10N60NZ FDPF10N60NZ TO-220F - - 50
FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
BV
T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250A, VGS = 0V, TJ = 25oC
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±25V, V
I
= 250A, Referenced to 25oC-0.6-V/
D
V
= 600V, V
DS
= 480V, TC = 125oC--10
V
DS
= 0V - - 1
GS
= 0V - - ±10 A
DS
600
--V
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250A 3.0 - 5.0 V
Static Drain to Source On Resistance VGS = 10V, ID = 5A - 0.64 0.75
Forward Transconductance VDS = 20V, ID = 5A - 14 - S
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance - 130 175 pF
Reverse Transfer Capacitance - 10 15 pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 6 - nC
Gate to Drain “Miller” Charge - 8 - nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 50 110 ns
Turn-Off Delay Time - 70 150 ns
Turn-Off Fall Time - 50 110 ns
= 25V, VGS = 0V
V
DS
f = 1MHz
V
= 480V, ID = 10A
DS
V
= 10V
GS
V
= 300V, ID = 10A
DD
R
= 25
G
- 1110 1475 pF
-2330nC
-2560ns
A
o
C
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 11mH, I
10A, di/dt 200A/s, VDD BV
3. I
SD
4.Pulse test: Pulse width s,Duty Cycle
5. Essentially Independent of Op erating Temperature Typical Characteristics
FDP10N60NZ / FDPF10N60NZ Rev. A
Maximum Continuous Drain to Source Diode Forward Current - - 10 A
Maximum Pulsed Drain to Source Diode Forward Current - - 40 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 2 - C
= 10A, VDD = 50V, RG = 25, Starting TJ = 25C
AS
, Starting TJ = 25C
DSS
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/s
F
= 10A - - 1.4 V
SD
SD
2
= 10A
- 300 - ns
www.fairchildsemi.com
Typical Performance Characteristics
246810
0.1
1
10
100
-55oC
150oC
*Notes:
1. V
DS
= 20V
2. 250
s Pulse Test
25oC
I
D
, Drain Current[A]
VGS, Gate-Source Voltage[V]
0.5 1 10
0.5
1
10
30
*Notes:
1. 250
s Pulse Test
2. T
C
= 25oC
I
D
, Drain Current[A]
VDS, Drain-Source Voltage[V]
V
GS
= 15.0V
10.0V
8.0V
7.0V
6.0V
5.5V
0 5 10 15 20
0.5
0.6
0.7
0.8
0.9
1.0
*Note: TC = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[],
Drain-Source On-Resistance
ID, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.1
1
10
100
*Notes:
1. VGS = 0V
2. 250
s Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
10
-1
110
30
1
10
100
1000
4000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
0 5 10 15 20 25
0
2
4
6
8
10
*Note: ID = 10A
VDS = 120V
V
DS
= 300V
V
DS
= 480V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDP10N60NZ / FDPF10N60NZ Rev. A
3
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