Fairchild FDP10N50U, FDPF10N50UT service manual
FDP10N50U / FDPF10N50UT
N-Channel MOSFET
500V, 8A, 1.05
FDP10N50U / FDPF10N50UT N-Channel MOSFET
November 2009
TM
UniFET
tm
Features
•R
• Low Gate Charge ( Typ. 18nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
MOSFET Maximum Ratings T
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns
P
D
, T
T
J
T
L
*Drain current limited by maximum junction temperature
= 0.85 ( Typ.) @ VGS = 10V, ID = 4A
DS(on)
( Typ. 9pF)
rss
G D S
Symbol Parameter FDP10N50U FDPF10N50UT Units
Drain to Source Voltage 500 V
Gate to Source Voltage ±30 V
Drain Current
Drain Current - Pulsed (Note 1) 32 32* A
Single Pulsed Avalanche Energy (Note 2) 320 mJ
Avalanche Current (Note 1) 8 A
Repetitive Avalanche Energy (Note 1) 12.5 mJ
Power Dissipation
STG
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TO-220
FDP Series
= 25oC unless otherwise noted*
C
-Continuous (T
-Continuous (T
(T
C
- Derate above 25
D
G
S
= 25oC) 125 42 W
Description
These N-Channel enhancement mode power field effect transistors are p roduced using Fa irchild’s proprietary, planar stripe,
DMOS technology.
This advan ce technology has been especially tailored to minimize on-state r esistance, prov ide sup erior switching per formance, and wit hstand high ener gy pulse in th e avalanche an d
commutation mode. T hese devices are well suited fo r high efficient switching mode power supplies and active power factor
correction.
D
G
TO-220F
FDPF Series
= 25oC) 8 8*
C
= 100oC) 4.8 4.8*
C
o
C1.00.33W/
300
S
o
o
Thermal Characteristics
Symbol Parameter
R
JC
R
JA
Thermal Resistance, Junction to Case 1.0 3.0
Thermal Resistance, Junction to Ambient 62.5 62.5
FDP10N50U FDPF10N50UT
Units
o
C/W
A
o
C
C
C
©2008 Fairchild Semiconductor Corporation
FDP10N50U / FDPF10N50UT Rev. A-1
www.fairchi
ldsemi.com1
FDP10N50U / FDPF10N50UT N-Channel MOSFET
Package Marking and Ordering Information T
= 25oC unless otherwise noted
C
Device Marking Device Package Reel Size Tape Width Quantity
FDP10N50U FDP10N50U TO-220 - - 50
FDPF10N50UT FDPF10N50UT TO-220F - - 50
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Drain to Source Breakdown Voltage ID = 250A, VGS = 0V, TJ = 25oC 500 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
I
= 250A, Referenced to 25oC-0.6-V/
D
V
= 500V, V
DS
= 400V, TC = 125oC - - 250
V
DS
= 0V - - 25
GS
= 0V - - ±100 nA
DS
Gate Threshold Voltage VGS = VDS, ID = 250A3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 4A - 0.85 1.05
Forward Transconductance VDS = 20V, ID = 4A (Note 4) -8.5-S
Input Capacitance
Output Capacitance - 115 155 pF
Reverse Transfer Capacitance - 9 13.5 pF
= 25V, VGS = 0V
V
DS
f = 1MHz
Total Gate Charge at 10V
= 400V, ID = 10A
V
Gate to Source Gate Charge - 5 - nC
Gate to Drain “Miller” Charge - 7.5 - nC
DS
= 10V
V
GS
( Note 4, 5)
- 850 1130 pF
-1824nC
A
o
C
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 38 86 ns
Turn-Off Delay Time - 46 102 ns
Turn-Off Fall Time - 33 76 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 10mH, I
3: I
8A, di/dt 200A/s, VDD BV
SD
4: Pulse Test: Pulse width 300s, Duty Cycle 2%
5: Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 8 A
Maximum Pulsed Drain to Source Diode Forward Current - - 32 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 45 - nC
= 8A, VDD = 50V, RG = 25, Starting TJ = 25°C
AS
, Starting TJ = 25°C
DSS
= 250V, ID = 10A
V
DD
R
= 25VGS = 10V
G
(Note 4, 5)
= 0V, I
GS
= 0V, I
V
GS
/dt = 100A/s (Note 4)
dI
F
= 8A - - 1.6 V
SD
= 8A
SD
-1540ns
-44-ns
FDP10N50U / FDPF10N50UT Rev. A-1
2
www.fairchildsemi.com
Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
20
V
=
15.0 V
GS
10.0 V
10
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
,Drain Current[A]
D
I
1
*Notes:
s Pulse Test
1. 250
2. T
= 25oC
C
0.1 1 10 20
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
1.6
20
*Notes:
1. V
= 20V
10
,Drain Current[A]
D
I
0.1
DS
s Pulse Test
2. 250
1
150oC
25oC
2468
VGS,Gate-Source Voltage[V]
30
FDP10N50U / FDPF10N50UT N-Channel MOSFET
1.4
,
]
m
[
DS(ON)
R
1.2
VGS = 10V
VGS = 20V
10
150oC
25oC
1.0
Drain-Source On-Resistance
0.8
0 5 10 15 20
*Note: TC = 25oC
ID, Drain Current [A]
, Reverse Drain Current [A]
S
I
1
0.00.51.01.52.0
VSD, Body Diode Forward Voltage [V]
*Notes:
1. VGS = 0V
s Pulse Test
2. 250
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
2000
1500
1000
Capacitances [pF]
C
oss
C
iss
500
C
rss
0
0.1 1 10 30
C
= Cgs + Cgd (Cds = shorted
iss
C
= Cds + C
oss
C
rss
= C
gd
gd
VDS, Drain-Source Voltage [V]
*Note:
= 0V
1. V
GS
2. f = 1MHz
)
10
8
VDS = 100V
V
= 250V
DS
V
= 400V
DS
6
4
, Gate-Source Voltage [V]
GS
V
2
0
0 5 10 15 20
*Note: ID = 8A
Qg, Total Gate Charge [nC]
FDP10N50U / FDPF10N50UT Rev. A-1
3
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