Fairchild FDPF085N10A service manual
FDPF085N10A
N-Channel PowerTrench® MOSFET
100V, 40A, 8.5mW
FDPF085N10A N-Channel PowerTrench
May 2011
Features
• R
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
• High Power and Current Handling Capability
• RoHS Compliant
= 6.5mW ( Typ.)@ VGS = 10V, ID = 40A
DS(on)
R
DS(on)
G D S
TO-220F
(Retractable)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Converters
• Synchronous Rectification for Server/Telecom PSU
• Battery Charger
• AC motor drives and Uninterruptible Power Supplies
• Off-line UPS
D
G
S
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
P
D
TJ, T
STG
T
L
Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current
Drain Current - Pulsed (Note 1) 160 A
Single Pulsed Avalanche Energy (Note 2) 269 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
= 25oC unless otherwise noted
C
- Continuous (TC = 25oC) 40
- Continuous (TC = 100oC) 28
(TC = 25oC) 33.3 W
- Derate above 25oC 0.22 W/oC
300
Thermal Characteristics
Symbol Parameter
R
qJC
R
qJA
©2011 Fairchild Semiconductor Corporation
FDPF085N10A Rev. A1
Thermal Resistance, Junction to Case 4.5
Thermal Resistance, Junction to Ambient 62.5
Ratings
www.fairchildsemi.com1
A
o
C
o
C
Units
o
C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDPF085N10A FDPF085N10A TO-220F - - 50
FDPF085N10A N-Channel PowerTrench
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
DBV
DT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250mA, VGS = 0V 100 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V
ID = 250mA, Referenced to 25oC - 0.07 - V/oC
VDS = 80V, V
= 0V - - 1
GS
VDS = 80V, TC = 150oC - - 500
= 0V - - ±100 nA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250mA 2.0 - 4.0 V
Static Drain to Source On Resistance VGS = 10V, ID = 40A - 6.5 8.5 mW
Forward Transconductance
VDS = 10V, ID = 40A (Note 4)
- 76 - S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
(er) Engry Related Output Capacitance VDS = 50V, VGS = 0V - 752 - pF
oss
Q
g(tot)
Q
gs
Q
gs2
Q
gd
ESR Equivalent Series Resistance (G-S) Drain Open, f = 1MHz - 0.97 - W
Input Capacitance
Output Capacitance - 468 620 pF
Reverse Transfer Capacitance - 20 - pF
VDS = 50V, VGS = 0V
f = 1MHz
Total Gate Charge at 10V
Gate to Source Gate Charge - 9.7 - nC
Gate Charge Threshoid to Plateau - 5.0 - nC
Gate to Drain “Miller” Charge - 7.5 - nC
VGS = 10V, V
ID = 96A
(Note 4, 5)
DS
= 50V
- 2025 2695 pF
- 31 40 nC
mA
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 22 54 ns
Turn-Off Delay Time - 29 68 ns
Turn-Off Fall Time - 8 26 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3 mH, IAS = 13.4 A, RG = 25W, Starting TJ = 25°C
3. ISD £ 40 A, di/dt £ 200A/ms, VDD £ BV
4. Pulse Test: Pulse width £ 300ms, Dual Cycle £ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 40 A
Maximum Pulsed Drain to Source Diode Forward Current - - 160 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 80 - nC
, Starting TJ = 25°C
DSS
VDD = 50V, ID = 96A
VGS = 10V, R
(Note 4, 5)
= 0V, I
GS
VDD = 50V,VGS = 0V, I
dIF/dt = 100A/ms (Note 4)
= 4.7W
GEN
= 40A - - 1.3 V
SD
= 96A
SD
- 18 46 ns
- 59 - ns
FDPF085N10A Rev. A1
2
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Typical Performance Characteristics
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
500
100
V
= 15.0V
GS
10.0V
8.0V
6.5V
6.0V
5.5V
5.0V
300
100
175oC
FDPF085N10A N-Channel PowerTrench
25oC
10
, Drain Current[A]
D
I
10
5
0.1 1 5
*Notes:
1. 250ms Pulse Test
2. TC = 25oC
VDS, Drain-Source Voltage[V]
, Drain Current[A]
D
I
1
2 3 4 5 6 7
-55oC
*Notes:
1. VDS = 10V
2. 250ms Pulse Test
VGS, Gate-Source Voltage[V]
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
18
*Note: TC = 25oC
16
12
VGS = 10V
[mW],
DS(ON)
R
8
Drain-Source On-Resistance
4
0 100 200 300 400
VGS = 20V
ID, Drain Current [A]
500
100
175oC
25oC
10
, Reverse Drain Current [A]
S
I
1
0.3 0.6 0.9 1.2 1.5
*Notes:
1. VGS = 0V
2. 250ms Pulse Test
VSD, Body Diode Forward Voltage [V]
®
MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
10000
C
iss
1000
C
oss
*Note:
1. VGS = 0V
100
Capacitances [pF]
2. f = 1MHz
C
= Cgs + Cgd (Cds = shorted)
iss
C
= Cds + C
oss
C
rss
10
0.1 1 10 100
= C
gd
gd
VDS, Drain-Source Voltage [V]
FDPF085N10A Rev. A1
C
rss
3
10
VDS = 20V
8
VDS = 50V
VDS = 80V
6
4
, Gate-Source Voltage [V]
GS
V
2
0
0 7 14 21 28 35
*Note: ID = 96A
Qg, Total Gate Charge [nC]
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