Fairchild FDPF045N10A service manual
FDPF045N10A
G
S
D
TO-220F
(Retractable)
G
S
D
N-Channel PowerTrench® MOSFET
100V, 67A, 4.5mΩ
FDPF045N10A N-Channel PowerTrench
August 2011
Features
• R
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
• High Power and Current Handling Capability
• RoHS Compliant
= 3.7mΩ ( Typ.)@ VGS = 10V, ID = 67A
DS(on)
R
DS(on)
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC Converters
• Synchronous Rectification for Telecommunication PSU
• Battery Charger
• AC motor drives and Uninterruptible Power Supplies
• Off-line UPS
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
I
DM
E
AS
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
P
D
TJ, T
STG
T
L
Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current
Drain Current - Pulsed (Note 1) 268 A
Single Pulsed Avalanche Energy (Note 2) 637 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
= 25oC unless otherwise noted*
C
- Continuous (TC = 25oC) 67
- Continuous (TC = 100oC) 47
(TC = 25oC) 43 W
- Derate above 25oC 0.29 W/oC
300
Thermal Characteristics
Symbol Parameter
R
θJC
R
θJA
©2011 Fairchild Semiconductor Corporation
FDPF045N10A Rev. C0
Thermal Resistance, Junction to Case 3.5
Thermal Resistance, Junction to Ambient 62.5
Ratings
www.fairchildsemi.com1
A
o
C
o
C
Units
o
C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDPF045N10A FDPF045N10A TO-220F - - 50
FDPF045N10A N-Channel PowerTrench
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 100 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±20V, V
ID = 250µA, Referenced to 25oC - 0.06 - V/oC
VDS = 80V, V
= 0V - - 1
GS
VDS = 80V, TC = 150oC - - 500
= 0V - - ±100 nA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250µA 2.0 - 4.0 V
Static Drain to Source On Resistance VGS = 10V, I
Forward Transconductance
VDS = 10V, ID = 67A (Note 4)
= 67A - 3.7 4.5 mΩ
D
- 127 - S
Dynamic Characteristics
C
iss
C
oss
C
rss
C
(er) Engry Releted Output Capacitance VDS = 50V, VGS = 0V - 1521 - pF
oss
Q
g(tot)
Q
gs
Q
gs2
Q
gd
Input Capacitance
Output Capacitance - 925 1230 pF
Reverse Transfer Capacitance - 34 - pF
VDS = 50V, VGS = 0V
f = 1MHz
Total Gate Charge at 10V
Gate to Source Gate Charge - 17 - nC
Gate Charge Threshold to Plateau - 8 - nC
VGS = 10V, VDS = 50V
ID = 100A
Gate to Drain “Miller” Charge - 13 - nC
- 3961 5270 pF
- 57 74 nC
µA
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
ESR Equivalent Series Resistance (G-S) Drain Open, f = 1MHz - 1.9 - Ω
Turn-On Delay Time
Turn-On Rise Time - 26 62 ns
Turn-Off Delay Time - 50 110 ns
Turn-Off Fall Time - 15 40 ns
VDD = 50V, ID = 100A
VGS = 10V, R
(Note 4, 5)
GEN
= 4.7Ω
- 23 56 ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3mH, IAS = 20.6A, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 100A, di/dt ≤ 200A/µs, VDD ≤ BV
4. Pulse Test: Pulse width ≤ 300µs, Dual Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Maximum Continuous Drain to Source Diode Forward Current - - 67 A
Maximum Pulsed Drain to Source Diode Forward Current - - 268 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 120 - nC
, Starting TJ = 25°C
DSS
= 0V, I
GS
VGS = 0V, VDD = 50V, I
= 67A - - 1.3 V
SD
= 100A
SD
dIF/dt = 100A/µs (Note 4)
- 75 - ns
FDPF045N10A Rev. C0
2
www.fairchildsemi.com
Typical Performance Characteristics
1 2 3 4 5 6
1
10
100
500
-55oC
175oC
*Notes:
1. VDS = 10V
2. 250µs Pulse Test
25oC
I
D
, Drain Current[A]
VGS, Gate-Source Voltage[V]
0.1 1 2
10
100
500
*Notes:
1. 250µs Pulse Test
2. TC = 25oC
I
D
, Drain Current[A]
VDS, Drain-Source Voltage[V]
V
GS
= 15.0V
10.0V
8.0V
6.5V
6.0V
5.5V
5.0V
0.0 0.3 0.6 0.9 1.2 1.5
1
10
100
500
*Notes:
1. VGS = 0V
2. 250µs Pulse Test
175oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0 100 200 300 400
3.0
3.5
4.0
4.5
*Note: TC = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[mΩ],
Drain-Source On-Resistance
ID, Drain Current [A]
0.1 1 10 100
10
100
1000
10000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. VGS = 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
0 10 20 30 40 50 60
0
2
4
6
8
10
*Note: ID = 100A
VDS = 20V
VDS = 50V
VDS = 80V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
FDPF045N10A N-Channel PowerTrench
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
®
MOSFET
FDPF045N10A Rev. C0
3
www.fairchildsemi.com
Loading...