Fairchild FDPC8013S service manual

FDPC8013S

PowerTrench 30 V Asymmetric Dual N-Channel MOSFET

Features

Q1: N-Channel  Max r

Q2: N-Channel

 Max r  Low inductance packaging shortens rise/fall times, resulting in

lower switching losses

 MOSFET integration enables optimum layout for lower circuit

inductance and reduced switch node ringing

 RoHS Compliant

= 9.6 mΩ at VGS = 4.5 V, ID = 10 A

DS(on)

= 2.7 mΩ at VGS = 4.5 V, ID = 22 A

DS(on)

®

Power Clip

General Description

This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous

TM

SyncFET

(Q2) have been designed to provide optimal power

efficiency.

Applications

 Computing  Communications  General Purpose Point of Load

April 2012

FDPC8013S PowerTrench

®

Power Clip

Pin 1

GND

Top

3.3 mm x 3.3 mm

MOSFET Maximum Ratings T

GND

LS

V+

(HSD

GND (LSS

SW

Bottom

= 25 °C unless otherwise noted

A

SW

Pin 1

HSG

SW

PAD9 V+(HSD)

PAD10 GND(LSS)

V+

LSG

GND

HSG

SW

Symbol Parameter Q1 Q2 Units

V

DS

V

GS

Drain to Source Voltage 30 30 V Gate to Source Voltage (Note 4) ±20 ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 20 55

I

D

= 25 °C 13

A

1a

26

1b

-Pulsed 40 100

E

AS

P

D

TJ, T

STG

Single Pulse Avalanche Energy (Note 3) 21 97 mJ Power Dissipation for Single Operation TA = 25 °C 1.6 Power Dissipation for Single Operation T

= 25 °C 0.8

A

1a

1c

2.0

0.9

1b

1d

Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics

R

θJA θJA

R

θJC

Thermal Resistance, Junction to Ambient 77 Thermal Resistance, Junction to Ambient 151 Thermal Resistance, Junction to Case 5.0 3.5

1a

1c

63

135

1b

1d

Package Marking and Ordering Information

V+

LSG

GND

A -Continuous T

W

°C/WR

Device Marking Device Package Reel Size Tape Width Quantity

13CF/15CF FDPC8013S Power Clip 33 13 ” 12 mm 3000 units

1

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FDPC8013S PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Off Characteristics

BV

ΔBV ΔT

I

DSS

I

GSS

DSS

DSS J

Drain to Source Breakdown Voltage Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current,

Forward

= 250 μA, VGS = 0 V

D

I

= 1 mA, VGS = 0 V

D

ID = 250 μA, referenced to 25 °C I

= 10 mA, referenced to 25 °C

D

V

DS

V

DS

= 24 V, V = 24 V, V

GS GS

= 0 V = 0 V

VGS = 20 V, VDS= 0 V V

= 20 V, VDS= 0 V

GS

Q1Q230

30

Q1 Q2

V

16 20

500 100

100

mV/°C

1

I

On Characteristics

V

GS(th)

ΔV ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage Gate to Source Threshold Voltage

Temperature Coefficient

Drain to Source On Resistance

Forward Transconductance

= VDS, ID = 250 μA

GS

V

= VDS, ID = 1 mA

GS

ID = 250 μA, referenced to 25 °C I

= 10 mA, referenced to 25 °C

D

V

= 10 V, ID = 13 A

GS

V

= 4.5 V, ID = 10 A

GS

V

= 10 V, ID = 13 A,TJ =125 °C

GS

V

= 10 V, ID = 26 A

GS

V

= 4.5 V, ID = 22 A

GS

V

= 10 V, ID = 26 A ,TJ =125 °C

GS

V

= 5 V, ID = 13 A

DS

V

= 5 V, ID = 26 A

DS

Q1Q21.2

1.2

Q1 Q2

Q1

Q2

Q1 Q2

1.5

1.7

-5

-6

4.6

6.7

6.6

1.4

2.0

1.9 53

168

3.0

3.0 mV/°C

6.4

9.6

9.2

1.9

2.7

2.6

μA μA

nA nA

V

mΩ

S

®

Power Clip

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

gs

gd

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge V

Gate to Source Gate Charge

Gate to Drain “Miller” Charge

Q1:

= 15 V, VGS = 0 V, f = 1 MHZ

V

DS

Q2:

= 15 V, VGS = 0 V, f = 1 MHZ

V

DS

Q1 Q2

827

2785

333 997

44

128

0.5

pF

Ω

6

11

2 5

16 30

2 4

13 44

6

21

2.2

7.2

1.9

6.6

ns

nC

Q1:

= 15 V, ID = 13 A, R

V

DD

Q2: V

= 15 V, ID = 26 A, R

DD

= 0 V to 10 V

GS

= 0 V to 4.5 V

GS

= 6 Ω

GEN

= 6 Ω

GEN

Q1 V

= 15 V,

DD

I

= 13 A

D

Q2 VDD = 15 V, I

= 26 A

D

Q1 Q2

2

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FDPC8013S PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Type Min Typ Max Units

Drain-Source Diode Characteristics

V

= 0 V, IS = 13 A (Note 2)

V

SD

t

rr

Q

rr

Notes:

1.R

is determined with the device mo un ted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. bo ard of FR-4 material. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

a. 77 °C/W when mounted on a 1 in2 pad of 2 oz copper

SS

SF

DS

DF

G

GS

V

= 0 V, IS = 26 A (Note 2)Q1Q2

GS

Q1

= 13 A, di/dt = 100 A/μs

I

F

Q2 I

= 26 A, di/dt = 300 A/μs

F

G

DF

DS

SF

Q1 Q2

is guaranteed by design while R

θJC

b. 63 °C/W when mounted on a 1 in

SS

0.80

0.77

2

pad of 2 oz copper

22 29

30

1.2

7

is determined by

θCA

ns

nC

V

®

Power Clip

c. 151 °C/W when mounted on a minimum pad of 2 oz copper

SS

SF

DS

DF

SS

SF

DS

DF

G

2 Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

of 21 mJ is based on starting TJ = 25 oC; N-ch: L = 1.2 mH, IAS = 6 A, VDD = 23 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 14.5 A.

3. Q1 :E

AS

Q2: EAS of 97 mJ is based on starting TJ = 25 oC; N-ch: L = 0.6 mH, IAS = 18 A, VDD = 23 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 32.9 A.

4. As an N-ch device, the negat i ve V

rating is for low duty cycle pulse occurence only. No continuous rating is implied.

gs

G

d. 135 °C/W when mounted on a minimum pad of 2 oz copper

3

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FDPC8013S PowerTrench

0.0 0.3 0.6 0.9 1.2 1.5

0

10

20

30

40

V

GS

= 3 V

V

GS

= 3.5 V

V

GS

= 10 V

V

GS

= 6 V

V

GS

= 4.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 10203040

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VGS = 3 V

VGS = 6 V

VGS = 4.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

I

D

, DRAIN CURRENT (A)

VGS = 3.5 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 13 A V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPER ATURE (

o

C)

2345678910

0

7

14

21

28

35

TJ = 125 oC

ID = 13 A

TJ = 25 oC

V

GS

, GATE TO SO U RCE VOLTAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

1.0 1.5 2.0 2.5 3.0 3.5

0

10

20

30

40

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.01

0.1

1

10

40

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics (Q1 N-Channel) T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Normali z e d O n - R e s i stance

vs Drain Current and Gate Voltage

®

Power Clip

Fig u r e 3. Nor m a lized On R esistan c e

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to D rain Diode

Forward Voltage vs Source Current

4

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