Fairchild FDP8N60ZU, FDPF8N60ZUT service manual
UniFET
TO-220F
FDPF Series
G
S
D
TO-220
FDP Series
G
S
D
G
S
D
G
S
D
FDP8N60ZU / FDPF8N60ZUT
N-Channel MOSFET, FRFET
600V, 6.5A, 1.35Ω
FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET
April 2012
TM
Features
•R
• Low gate charge ( Typ. 20nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
MOSFET Maximum Ratings T
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns
P
D
, T
T
J
T
L
*Drain current limited by maximum junction temperature
= 1.15mΩ ( Typ.) @ VGS = 10V, ID = 3.25A
DS(on)
( Typ. 10pF)
rss
o
= 25
C unless otherwise noted*
C
Symbol Parameter FDP8N60ZU FDPF8N60ZUT Units
Drain to Source Voltage 600 V
Gate to Source Voltage ±30 V
-Continuous (T
-Continuous (T
(T
= 25oC) 135 34.5 W
C
- Derate above 25
STG
Drain Current
Drain Current - Pulsed (Note 1) 26 26* A
Single Pulsed Avalanche Energy (Note 2) 420 mJ
Avalanche Current (Note 1) 6.5 A
Repetitive Avalanche Energy (Note 1) 13.5 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
= 25oC) 6.5 6.5*
C
= 100oC) 3.9 3.9*
C
o
C1.050.28W/
300
Thermal Characteristics
Symbol Parameter
R
θJC
θCS
R
θJA
Thermal Resistance, Junction to Case 0.95 3.6
Thermal Resistance, Case to Sink Typ. 0.5 Thermal Resistance, Junction to Ambient 62.5 62.5
FDP8N60ZU FDPF8N60ZUT
A
o
o
C
o
C
Units
o
C/WR
C
©2012 Fairchild Semiconductor Corporation
FDP8N60ZU / FDPF8N60ZUT Rev. C0
www.fairchildsemi.com1
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDP8N60ZU FDP8N60ZU TO-220 - - 50
FDPF8N60ZUT FDPF8N60ZUT TO-220F - - 50
FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TJ = 25oC 600 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±30V, V
I
= 250μA, Referenced to 25oC-0.7-V/
D
V
= 600V, V
DS
= 480V, TC = 125oC - - 250
V
DS
= 0V - - 25
GS
= 0V - - ±10 μA
DS
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 3.25A - 1.15 1.35 Ω
Forward Transconductance VDS = 40V, ID = 3.25A - 7 - S
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance - 110 150 pF
Reverse Transfer Capacitance - 10 15 pF
Total Gate Charge at 10V
Gate to Source Gate Charge - 5 - nC
Gate to Drain “Miller” Charge - 8 - nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time - 30 70 ns
Turn-Off Delay Time - 55 120 ns
Turn-Off Fall Time - 35 80 ns
= 25V, VGS = 0V
V
DS
f = 1MHz
V
= 480V, ID = 6.5A
DS
V
= 10V
GS
(Note 4)
= 300V, ID = 6.5A
V
DD
R
= 25Ω, VGS = 10V
G
(Note 4)
- 950 1265 pF
-2026nC
-2050ns
μA
o
C
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 20mH, I
3: I
≤ 6.5A, di/dt ≤ 200A/μs, VDD ≤ BV
SD
4: Essentially Independent of Operating Temperature Typical Characteristics
FDP8N60ZU / FDPF8N60ZUT Rev. C0
Maximum Continuous Drain to Source Diode Forward Current - - 6.5 A
Maximum Pulsed Drain to Source Diode Forward Current - - 26 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 42 - nC
= 6.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
AS
, Starting TJ = 25°C
DSS
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/μs
F
= 6.5A - - 1.6 V
SD
= 6.5A
SD
2
-40-ns
www.fairchildsemi.com
Typical Performance Characteristics
2468
0.1
1
10
20
25oC
150oC
*Notes:
1. V
DS
= 20V
2. 250
μs Pulse Test
VGS,Gate-Source Voltage[V]
I
D
,Drain Current[A]
0.1 1 10 20
0.1
1
10
20
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25oC
V
GS
= 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
VDS,Drain-Source Voltage[V]
I
D
,Drain Current[A]
036912
1.0
1.1
1.2
1.3
1.4
1.5
*Note: TC = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[mΩ],
Drain-Source On-Resistance
ID, Drain Current [A]
01234
1
10
100
200
*Notes:
1. VGS = 0V
2. 250
μs Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Voltage [V]
25oC
0.1 1 10 30
0
500
1000
1500
2000
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Volta ge [V ]
0 5 10 15 20
0
2
4
6
8
10
*Note: ID = 6.5A
VDS = 150V
V
DS
= 300V
V
DS
= 480V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [n C]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDP8N60ZU / FDPF8N60ZUT N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDP8N60ZU / FDPF8N60ZUT Rev. C0
3
www.fairchildsemi.com
Loading...