Fairchild FDP8N50NZF, FDPF8N50NZF service manual
February 2012
TO-220
FDP Series
G D S
G
S
D
G
S
D
TO-220F
FDPF Series
(potted)
G
S
D
FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET
UniFET-II
FDP8N50NZF / FDPF8N50NZF
N-Channel MOSFET
500V, 7A, 1Ω
Features
•R
• Low Gate Charge ( Typ. 14nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improve dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
= 0.85Ω ( Typ.) @ VGS = 10V, ID = 3.25A
DS(on)
( Typ. 5pF)
rss
Description
This N-Channel enhancement mode power field effect transistors
are produced using Fairchild's proprietary, planar stripe, DMOS
technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
TM
MOSFET Maximum Ratings T
Symbol Parameter FDP8N50NZF FDPF8N50NZF Units
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns
P
D
, T
T
J
STG
T
L
*Drain current limited by maximum junction temperature
Drain to Source Voltage 500 V
Gate to Source Voltage ±25 V
Drain Current
Drain Current - Pulsed (Note 1) 28 28* A
Single Pulsed Avalanche Energy (Note 2) 93 mJ
Avalanche Current (Note 1) 7 A
Repetitive Avalanche Energy (Note 1) 13 mJ
Power Dissipation
Operating and Storage Temperature Range -55 to +150
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
o
= 25
C unless otherwise noted
C
-Continuous (T
-Continuous (T
(T
= 25oC) 130 40 W
C
- Derate above 25
= 25oC) 7 7*
C
= 100oC) 4.2 4.2*
C
o
C 1 0.32 W/oC
300
Thermal Characteristics
Symbol Parameter FDP8N50NZF FDPF8N50NZF Units
R
θJC
θCS
R
θJA
Thermal Resistance, Junction to Case 0.96 3.1
Thermal Resistance, Case to Sink Typ. 0.5 Thermal Resistance, Junction to Ambient 62.5 62.5
A
o
C
o
C
o
C/WR
©2012 Fairchild Semiconductor Corporation
FDP8N50NZF / FDPF8N50NZF Rev. C0
www.fairchildsemi.com1
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDP8N50NZF FDP8N50NZF TO-220 - - 50
FDPF8N50NF FDPF8N50NZF TO-220F - - 50
FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET
Electrical Characteristics T
= 25oC unless otherwise noted
C
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TC = 25oC 500 - - V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±25V, V
I
= 250μA, Referenced to 25oC-0.5-V/
D
V
= 500V, V
DS
= 400V, TC = 125oC - - 100
V
DS
= 0V - - 10
GS
= 0V - - ±10 μA
DS
On Characteristics
V
R
g
FS
GS(th)
DS(on)
Gate Threshold Voltage VGS = VDS, ID = 250μA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 3.5A - 0.85 1 Ω
Forward Transconductance VDS = 20V, ID = 3.5A (Note 4) -6.3-S
Dynamic Characteristics
C
C
C
Q
Q
Q
iss
oss
rss
g(tot)
gs
gd
Input Capacitance
Output Capacitance - 80 105 pF
Reverse Transfer Capacitance - 5 8 pF
= 25V, VGS = 0V
V
DS
f = 1MHz
Total Gate Charge at 10V
V
= 400V,ID = 7A
Gate to Source Gate Charge - 4 - nC
Gate to Drain “Miller” Charge - 6 - nC
DS
V
= 10V
GS
(Not e 4, 5)
- 565 735 pF
-1418nC
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
= 250V, ID =7A
Turn-On Rise Time - 34 80 ns
Turn-Off Delay Time - 43 95 ns
Turn-Off Fall Time - 27 60 ns
V
DD
R
= 25Ω, VGS = 10V
G
(Note 4, 5)
-1745ns
μA
o
C
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3.8mH, I
≤ 7A, di/dt ≤ 200A/μs, VDD ≤ BV
3. I
SD
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP8N50NZF / FDPF8N50NZF Rev. C0
Maximum Continuous Drain to Source Diode Forward Current - - 7 A
Maximum Pulsed Drain to Source Diode Forward Current - - 28 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 0.3 - μC
= 7A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
AS
, Starting TJ = 25°C
DSS
= 0V, I
GS
V
= 0V, I
GS
dI
/dt = 100A/μs (Note 4)
F
= 7A - - 1.5 V
SD
= 7A
SD
2
-80-ns
www.fairchildsemi.com
Typical Performance Characteristics
0.03 0.1 1 10 20
0.03
0.1
1
10
30
*Notes:
1. 250
μs Pulse Test
2. T
C
= 25oC
V
GS
= 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
I
D
, Drain Current[A]
VDS, Drain-Source Voltage[V]
246810
0.1
1
10
30
-55oC
150oC
*Notes:
1. V
DS
= 20V
2. 250
μs Pulse Test
25oC
I
D
, Drain Current[A]
VGS, Gate-Source Voltage[V]
0369121518
0.4
0.8
1.2
1.6
2.0
*Note: TC = 25oC
VGS = 20V
VGS = 10V
R
DS(ON)
[Ω],
Drain-Source On-Resistance
ID, Drain Current [A]
0.4 0.8 1.2 1.6 2.0 2.4
1
10
100
*Notes:
1. VGS = 0V
2. 250
μs Pulse Test
150oC
I
S
, Reverse Drain Current [A]
VSD, Body Diode Forward Volta ge [V]
25oC
0.1 1 10 30
0
300
600
900
1200
C
oss
C
iss
C
iss
= Cgs + Cgd (Cds = shorted)
C
oss
= Cds + C
gd
C
rss
= C
gd
*Note:
1. V
GS
= 0V
2. f = 1MHz
C
rss
Capacitances [pF]
VDS, Drain-Source Voltage [V]
03691215
0
2
4
6
8
10
*Note: ID = 6.5A
VDS = 100V
V
DS
= 250V
V
DS
= 400V
V
GS
, Gate-Source Voltage [V]
Qg, Total Gate Charge [nC]
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage
Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
FDP8N50NZF / FDPF8N50NZF Rev. C0
3
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