Fairchild FDP8N50NZ, FDPF8N50NZT service manual

UniFET

D

D

FDP8N50NZ / FDPF8N50NZT

N-Channel MOSFET

500V, 8A, 0.85Ω

FDP8N50NZ / FDPF8N50NZT N-Channel MOSFET

October 2009

TM

Features

•R

• Low Gate Charge ( Typ. 14nC)

• Low C

• Fast Switching

• 100% Avalanche Tested

• Improve dv/dt Capability

• ESD Improved Capability

• RoHS Compliant

MOSFET Maximum Ratings T

V

DSS

V

GSS

I

D

I

DM

E

AS

I

AR

E

AR

dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns
P

D

, T

T

J

T

L

*Drain current limited by maximum junction temperature

= 0.77Ω ( Typ.) @ VGS = 10V, ID = 4A

DS(on)

( Typ. 5pF)

rss

D

G

G D S

TO-220

S

FDP Series

o

= 25

C unless otherwise noted

C

Symbol Parameter FDP8N50NZ FDPF8N50NZT Units

Drain to Source Voltage 500 V
Gate to Source Voltage ±25 V

-Continuous (T

-Continuous (T

(T

= 25oC) 139 50 W

C

- Derate above 25

STG

Drain Current
Drain Current - Pulsed (Note 1) 30 30* A

Single Pulsed Avalanche Energy (Note 2) 122 mJ
Avalanche Current (Note 1) 8 A
Repetitive Avalanche Energy (Note 1) 13.9 mJ

Power Dissipation
Operating and Storage Temperature Range -55 to +150

Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds

Description

This N-Channel enhancement mode power field effect transistors
are produced using Fairchild's proprietary, planar stripe, DMOS
technology.

This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.

G

G

TO-220F
FDPF Series

S

S

= 25oC) 8 8*

C

= 100oC) 4.8 4.8*

C

o

C1.10.4W/

300

Thermal Characteristics

Symbol Parameter FDP8N50NZ FDPF8N50NZT Units

R

θJC
θCS

R

θJA

Thermal Resistance, Junction to Case 0.96 3.1
Thermal Resistance, Case to Sink Typ. 0.5 ­Thermal Resistance, Junction to Ambient 62.5 62.5

A

o

C

o

C

o

C

o

C/WR

©2009 Fairchild Semiconductor Corporation
FDP8N50NZ / FDPF8N50NZT Rev. A

www.fairchildsemi.com1

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP8N50NZ FDP8N50NZ TO-220 - - 50

FDPF8N50NZT FDPF8N50NZT TO-220F - - 50

FDP8N50NZ / FDPF8N50NZT N-Channel MOSFET

Electrical Characteristics T

= 25oC unless otherwise noted

C

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BV
∆BV

∆T
I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TC = 25oC 500 - - V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current VGS = ±25V, V

I

= 250µA, Referenced to 25oC-0.5-V/

D

V

= 500V, V

DS

= 400V, TC = 125oC--10

V

DS

= 0V - - 1

GS

= 0V - - ±10 µA

DS

On Characteristics

V
R
g

FS

GS(th)
DS(on)

Gate Threshold Voltage VGS = VDS, ID = 250µA3.0-5.0V
Static Drain to Source On Resistance VGS = 10V, ID = 4A - 0.77 0.85 Ω
Forward Transconductance VDS = 20V, ID = 4A (Note 4) -6.3-S

Dynamic Characteristics

C
C
C
Q
Q
Q

iss
oss
rss
g(tot)
gs
gd

Input Capacitance
Output Capacitance - 80 105 pF
Reverse Transfer Capacitance - 5 10 pF

= 25V, VGS = 0V

V

DS

f = 1MHz

Total Gate Charge at 10V

V

= 400V,ID = 8A

Gate to Source Gate Charge - 4 - nC
Gate to Drain “Miller” Charge - 6 - nC

DS

V

= 10V

GS

(Not e 4, 5)

- 565 735 pF

-1418nC

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Turn-On Delay Time

= 250V, ID = 8A

Turn-On Rise Time - 34 80 ns
Turn-Off Delay Time - 43 95 ns
Turn-Off Fall Time - 27 60 ns

V

DD

R

= 25Ω, VGS = 10V

G

(Note 4, 5)

-1745ns

µA

o

C

Drain-Source Diode Characteristics

I

S

I

SM

V

SD

t

rr

Q

rr

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L = 3.8mH, I
≤ 8A, di/dt ≤ 200A/µs, VDD ≤ BV

3. I

SD

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

FDP8N50NZ / FDPF8N50NZT Rev. A

Maximum Continuous Drain to Source Diode Forward Current - - 8 A
Maximum Pulsed Drain to Source Diode Forward Current - - 30 A
Drain to Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge - 1.9 - µC

= 8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

AS

, Starting TJ = 25°C

DSS

= 0V, I

GS

V

= 0V, I

GS

dI

/dt = 100A/µs (Note 4)

F

= 8A - - 1.4 V

SD

= 8A

SD

2

- 300 - ns

www.fairchildsemi.com

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

30

V

= 15.0 V

GS

10.0 V

10

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

1

, Drain Current[A]

D

I

0.1

0.03

0.03 0.1 1 10 20

*Notes:

1. 250

2. T

µs Pulse Test

= 25oC

C

VDS, Drain-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

2.0

30

10

150oC

1

, Drain Current[A]

D

I

0.1
246810

-55oC

25oC

*Notes:

1. V

2. 250

= 20V

DS

µs Pulse Test

VGS, Gate-Source Voltage[V]

100

FDP8N50NZ / FDPF8N50NZT N-Channel MOSFET

1.6

[Ω],

1.2

DS(ON)

R

VGS = 10V

VGS = 20V

10

150oC

25oC

0.8

Drain-Source On-Resistance

0.4
0369121518

*Note: TC = 25oC

ID, Drain Current [A]

, Reverse Drain Current [A]

S

I

1

0.4 0.8 1.2 1.6 2.0 2.4

VSD, Body Diode Forward Volta ge [V]

*Notes:

1. VGS = 0V

µs Pulse Test

2. 250

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Capacitances [pF]

1200

900

600

300

C

= Cgs + Cgd (Cds = shorted)

iss

C

= Cds + C

C

oss

C

iss

oss

C

rss

= C

gd

gd

*Note:

= 0V

1. V

GS

2. f = 1MHz

C

rss

10

VDS = 100V
V

= 250V

8

V

DS

= 400V

DS

6

4

, Gate-Source Voltage [V]

GS

V

2

0

0.1 1 10 30
VDS, Drain-Source Voltage [V]

FDP8N50NZ / FDPF8N50NZT Rev. A

0

03691215

*Note: ID = 8A

Qg, Total Gate Charge [n C]

3

www.fairchildsemi.com