Fairchild FDP8876 service manual

FDP8876
N-Channel PowerTrench® MOSFET

30V, 71A, 8.5mΩ

FDP8876 N-Channel PowerTrench

November 2005

General Descriptions

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers. It has been optimized for low gate charge, low

r

and fast switching speed.

DS(ON)

DRAIN

(FLANGE)

TO-220AB

FDP SERIES

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DSS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 30 V

Gate to Source Voltage ±20 V

Drain Current

Continuous (T

Continuous (T

Pulsed Figure 4 A

Single Pulse Avalanche Energy (Note 1) 180 mJ

Power dissipation 70 W

Operating and Storage Temperature -55 to 175

= 25oC, VGS = 10V)

C

= 25oC, VGS = 4.5V) 64 A

C

A

SOURCE

DRAIN

GATE

= 25°C unless otherwise noted

Features

 r

 r

 High performance trench technology for extremely low

 Low gate charge

 High power and current handling capability

 RoHS Compliant

DS(ON)

DS(ON)

r

DS(ON)

= 8.5mΩ, V

= 10.3mΩ, V

= 10V, ID = 40A

GS

= 4.5V, ID = 40A

GS

G

D

S

70 A

®

MOSFET

o

C

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance Junction to Case TO-263 2.14

Thermal Resistance Junction to Ambient TO-263,1in2copper pad area 62

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP8876 FDP8876 TO-220AB Tube N/A 50 units

©2005 Fairchild Semiconductor Corporation
FDP8876 Rev. A

o

C/W

o

C/W

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FDP8876 N-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B

I

DSS

I

GSS

VDSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V

Zero Gate Voltage Drain Current

VDS = 24V 1 µA

VGS = 0V TA = 150oC - - 250

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 - 2.5 V

ID = 40A, VGS = 10V - 6.1 8.7

Drain to Source On Resistance

ID = 40A, VGS = 4.5V - 7.7 10.5

ID = 40, VGS = 10V,
TA = 175oC

- 11 14

Dynamic Characteristics

C

ISS

C

OSS

C

RSS

R

G

Q

g(TOT)

Q

g(5)

Q

g(TH)

Q

gs

Q

gs2

Q

gd

Input Capacitance

Output Capacitance - 340 - pF

Reverse Transfer Capacitance - 210 - pF

VDS = 15V, VGS = 0V,
f = 1MHz

- 1700 - pF

Gate Resistance VGS=0.5V, f = 1MHz - 2.3 - Ω

Total Gate Charge at 10V VGS = 0V to 10V

Total Gate Charge at 5V VGS = 0V to 5V - 17 24 nC

Threshold Gate Charge VGS = 0V to 1V - 1.6 2.4 nC

VDD = 15V
ID = 40A
Ig = 1.0mA

- 32 45 nC

Gate to Sourse Gate Charge - 4.7 - nC

Gate Charge Threshold to Plateau - 3.1 - nC

Gate to Drain “Miller” Charge - 7.0 - nC

mΩ

®

MOSFET

Switching Characteristics (V

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time

Turn-On Delay Time - 9 - ns

Rise Time - 97 - ns

Turn-Off Delay Time - 51 - ns

Fall Time - 39 - ns

Turn-Off Time - - 135 ns

GS

= 10V)

Drain-Source Diode Characteristic

V

SD

t

rr

Q

RR

Notes:

1: Starting TJ=25OC,L=1mH,IAS=19A,VDD=27V,VGS=10V

2: Pulse width=100s

Source to Drain Diode Voltage

Reverse Recovery Time ISD = 40A, dISD/dt=100A/µs - - 22 ns

Reverse Recovered Charge ISD = 40A, dISD/dt=100A/µs - - 9 nC

- - 189 ns

VDD = 15V, ID = 40A
VGS = 10V, RGS = 10Ω

I

= 40A - - 1.25 V

SD

ISD = 3.2A - - 1.0 V

FDP8876 Rev. A

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