Fairchild FDP8870 service manual

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FDP8870

N-Channel PowerTrench® MOSFET
30V, 156A, 4.1mΩ

FDP8870

November 2004

General Description

This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r

and fast switching speed.

DS(ON)

Features

•r

•r

• High performance trench technology for extremely low

DS(ON)

DS(ON)

r

DS(ON)

= 4.1mΩ, V
= 4.6mΩ, V

= 10V, ID = 35A

GS

= 4.5V, ID = 35A

GS

• Low gate charge

Applications

• High power and current handling capability

• DC/DC converters

DRAIN

(FLANGE)

DRAIN

GATE

TO-220AB

FDP SERIES

MOSFET Maximum Ratings T

SOURCE

= 25°C unless otherwise noted

C

D

G

S

Symbol Parameter Ratings Units

V
V

DSS
GS

Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current
Continuous (T

I

D

Continuous (T
Continuous (T

= 25oC, VGS = 10V) (Note 1)

C

= 25oC, VGS = 4.5V) (Note 1) 147 A

C

= 25oC, VGS = 10V, with R

amb

= 62oC/W) 19 A

θJA

156 A

Pulsed Figure 4 A

E

AS

P

D

, T

T

J

STG

Single Pulse Avalanche Energy (Note 2) 300 mJ
Power dissipation 160 W

o

Derate above 25

C1.07W/

Operating and Storage Te mperature -55 to 175

o

C

o

C

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance Junction to Case TO-220 0.94
Thermal Resistance Junction to Ambient TO-220 ( Note 3) 62

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDP8870 FDP8870 TO-220AB Tube N/A 50 units
FDP8870 FD P8870_NL (Note 4) TO-220AB Tube N/A 50 units

©2004 Fairchild Semiconductor Corporation

o

C/W

o

C/W

FDP8870 Rev. A2

FDP8870

Electrical Characteristics T

= 25°C unless otherwise noted

C

Symbol Parameter Tes t Cond itions Min Typ Max Units

Off Characteristics

B

VDSS

I

DSS

I

GSS

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V

V

= 24V - - 1

Zero Gate Voltage Drain Current

DS

= 0V TC = 150oC - - 250

V

GS

Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics

V

GS(TH)

r

DS(ON)

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 - 2.5 V

= 35A, VGS = 10V - 0.0034 0.0041

I

D

I

= 35A, VGS = 4.5V - 0.0040 0.0046

Drain to Source On Resistance

D

I

= 35A, VGS = 10V,

D

T

= 175oC

J

- 0.0051 0.0065

Dynamic Characteristics

C

ISS

C

OSS

C

RSS

R

G

Q

g(TOT)

Q

g(5)

Q

g(TH)

Q

gs

Q

gs2

Q

gd

Input Capacitance
Output Capacitance - 970 - pF
Reverse Transfer Capacitance - 570 - pF

= 15V, VGS = 0V,

V

DS

f = 1MHz

Gate Resistance VGS = 0.5V, f = 1MHz - 2.1 - Ω
Total Gate Charge at 10V VGS = 0V to 10V
Total Gate Charge at 5V VGS = 0V to 5V - 56 69 nC

V

= 15V

Threshold Gate Charge VGS = 0V to 1V - 5.0 6.5 nC
Gate to Source Gate Charge - 15 - nC
Gate Charge Threshold to Plateau - 10 - nC

DD

= 35A

I

D

= 1.0mA

I

g

Gate to Drain “Miller” Charge - 23 - nC

- 5200 - pF

- 106 132 nC

µA

Ω

Switching Characteristics

t

ON

t

d(ON)

t

r

t

d(OFF)

t

f

t

OFF

Turn-On Time
Turn-On Delay Time - 11 - ns
Rise Time - 105 - ns
Turn-Off Delay Time - 70 - ns
Fall Time - 46 - n s
Turn-Off Time - - 173 ns

(VGS = 10V)

= 15V, ID = 35A

V

DD

= 4.5V, RGS = 3.3Ω

V

GS

Drain-Source Diode Characteristics

I

= 35A - - 1.25 V

V

SD

t

rr

Q

RR

Notes:
1: Package current limitation is 80A.
2: Starting T
3: Pulse width = 100s.
4: FDP8870_NL is lead free product. FDP8870_NL marking will appea r on the reel label.

Source to Drain Diode Voltage
Reverse Recovery Time ISD = 35A, dISD/dt = 100A/µs- -37ns

Reverse Recovered Charge ISD = 35A, dISD/dt = 100A/µs- -21nC

= 25°C, L = 0.15mH, IAS = 64A, VDD = 27V, VGS = 10V.

J

SD

= 15A - - 1.0 V

I

SD

- - 168 ns

©2004 Fairchild Semiconductor Corporation FDP8870 Rev. A2

FDP8870

Typical Characteristics T

= 25°C unless otherwise noted

C

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLI ER

0

0 25 50 75 100 175

125

150

TC, CASE TEMPERATURE (oC)

Figure 1. Normali ze d Po we r Dissipation vs Case

Temperature

2

DUTY CYCLE - DESCENDING ORDER

0.5

1

0.2

0.1

0.05

0.02

0.01

0.1

, NORMALIZED

θJC

Z

THERMAL IMPEDANCE

0.01

-5

10

SINGLE PULSE

-4

10

-3

10

t, RECTANGULAR PULSE DURATION (s)

175

150

125

CURRENT LIMITED
BY PACKAGE

100

75

, DRAIN CURRENT (A)

50

D

I

25

0

25 50 75 100 125 150

175

TC, CASE TEMPERATURE (oC)

Figure 2. Maximum Contin uous Drain Current vs

Case Temperature

P

DM

t

1

t

x R

θJC

+ T

2

C

1

10

NOTES:
DUTY FACTOR: D = t

PEAK TJ = PDM x Z

-2

10

-1

10

θJC

10

1/t2

0

Figure 3. Normalized Maximum Transient Thermal Impedance

1000

TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION

VGS = 4.5V

, PEAK CURRENT (A)

DM

I

100

50

-5

10

-4

10

-3

10

-2

10

-1

10

t, PUL SE WIDTH (s)

TC = 25oC
FOR TEMPERATURES

o

ABOVE 25

C DERATE PEAK

CURRENT AS FOLLOWS:

175 - T

I = I

25

10

C

150

0

1

10

Figure 4. Peak Current Capability

©2004 Fairchild Semiconductor Corporation FDP8870 Rev. A2